Welcome to Winsun (HK) Electronics Limited!
+86-(0755)8253 3846
FILTERED PRODUCT SELECTION

FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

Parametric Selection Filter options by technical parameters
Stock & Datasheets Review availability and technical references
RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK35A65W,S5X Toshiba Semiconductor and Storage

TK35A65W,S5X

MOSFET N-CH 650V 35A TO220SIS

Toshiba Semiconductor and Storage

13 -
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Ta) 10V 80mOhm @ 17.5A, 10V 3.5V @ 2.1mA 100 nC @ 10 V ±30V 4100 pF @ 300 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK39N60X,S1F Toshiba Semiconductor and Storage

TK39N60X,S1F

MOSFET N-CH 600V 38.8A TO247

Toshiba Semiconductor and Storage

14 -
Datasheet DTMOSIV-H TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 38.8A (Ta) 10V 65mOhm @ 12.5A, 10V 3.5V @ 1.9mA 85 nC @ 10 V ±30V 4100 pF @ 300 V - 270W (Tc) 150°C (TJ) - - Through Hole TO-247
TK35N65W,S1F Toshiba Semiconductor and Storage

TK35N65W,S1F

MOSFET N-CH 650V 35A TO247

Toshiba Semiconductor and Storage

5 -
Datasheet DTMOSIV TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Ta) 10V 80mOhm @ 17.5A, 10V 3.5V @ 2.1mA 100 nC @ 10 V ±30V 4100 pF @ 300 V - 270W (Tc) 150°C (TJ) - - Through Hole TO-247
TK62J60W,S1VQ Toshiba Semiconductor and Storage

TK62J60W,S1VQ

MOSFET N-CH 600V 61.8A TO3P

Toshiba Semiconductor and Storage

2 -
Datasheet DTMOSIV TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 61.8A (Ta) 10V 38mOhm @ 30.9A, 10V 3.7V @ 3.1mA 180 nC @ 10 V ±30V 6500 pF @ 300 V - 400W (Tc) 150°C (TJ) - - Through Hole TO-3P(N)
TPC8134,LQ(S Toshiba Semiconductor and Storage

TPC8134,LQ(S

MOSFET P-CH 40V 5A 8SOP

Toshiba Semiconductor and Storage

7,056 -
Datasheet U-MOSVI 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 5A (Ta) 4.5V, 10V 52mOhm @ 2.5A, 10V 2V @ 100µA 20 nC @ 10 V +20V, -25V 890 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
TK2Q60D(Q) Toshiba Semiconductor and Storage

TK2Q60D(Q)

MOSFET N-CH 600V 2A PW-MOLD2

Toshiba Semiconductor and Storage

8,512 -
Datasheet π-MOSVII TO-251-3 Stub Leads, IPAK Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Ta) 10V 4.3Ohm @ 1A, 10V 4.4V @ 1mA 7 nC @ 10 V ±30V 280 pF @ 25 V - 60W (Tc) 150°C (TJ) - - Through Hole PW-MOLD2
TPH2R903PL,L1Q Toshiba Semiconductor and Storage

TPH2R903PL,L1Q

PB-FPOWERMOSFETTRANSISTORSOP8-AD

Toshiba Semiconductor and Storage

7,519 -
Datasheet U-MOSIX-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 70A (Tc) 4.5V, 10V 2.9mOhm @ 35A, 10V 2.1V @ 200µA 26 nC @ 10 V ±20V 2300 pF @ 15 V - 960mW (Ta), 81W (Tc) 175°C - - Surface Mount 8-SOP Advance (5x5)
TK3A65DA(STA4,QM) Toshiba Semiconductor and Storage

TK3A65DA(STA4,QM)

MOSFET N-CH 650V 2.5A TO220SIS

Toshiba Semiconductor and Storage

3,536 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 2.5A (Ta) 10V 2.51Ohm @ 1.3A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK8R2E06PL,S1X Toshiba Semiconductor and Storage

TK8R2E06PL,S1X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

9,416 -
Datasheet U-MOSIX-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 8.2mOhm @ 25A, 10V 2.5V @ 300µA 28 nC @ 10 V ±20V 1990 pF @ 30 V - 81W (Tc) 175°C - - Through Hole TO-220
TK5A65W,S5X Toshiba Semiconductor and Storage

TK5A65W,S5X

MOSFET N-CH 650V 5.2A TO220SIS

Toshiba Semiconductor and Storage

8,447 -
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 5.2A (Ta) 10V 1.2Ohm @ 2.6A, 10V 3.5V @ 170µA 10.5 nC @ 10 V ±30V 380 pF @ 300 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
Total 814 Record«Prev1... 4142434445464748...82Next»
WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.