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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK80S06K3L(T6L1,NQ Toshiba Semiconductor and Storage

TK80S06K3L(T6L1,NQ

MOSFET N-CH 60V 80A DPAK

Toshiba Semiconductor and Storage

8,637 -
Datasheet U-MOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Ta) 6V, 10V 5.5mOhm @ 40A, 10V 3V @ 1mA 85 nC @ 10 V ±20V 4200 pF @ 10 V - 100W (Tc) 175°C (TJ) - - Surface Mount DPAK+
TK8A60DA(STA4,Q,M) Toshiba Semiconductor and Storage

TK8A60DA(STA4,Q,M)

MOSFET N-CH 600V 7.5A TO220SIS

Toshiba Semiconductor and Storage

3,828 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7.5A (Ta) 10V 1Ohm @ 4A, 10V 4V @ 1mA 20 nC @ 10 V ±30V 1050 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TPC6008-H(TE85L,FM Toshiba Semiconductor and Storage

TPC6008-H(TE85L,FM

MOSFET N-CH 30V 5.9A VS-6

Toshiba Semiconductor and Storage

7,232 -
Datasheet U-MOSVI-H SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 5.9A (Ta) 4.5V, 10V 60mOhm @ 3A, 10V 2.3V @ 100µA 4.8 nC @ 10 V ±20V 300 pF @ 10 V - 700mW (Ta) 150°C (TJ) - - Surface Mount VS-6 (2.9x2.8)
TPC6009-H(TE85L,FM Toshiba Semiconductor and Storage

TPC6009-H(TE85L,FM

MOSFET N-CH 40V 5.3A VS-6

Toshiba Semiconductor and Storage

6,673 -
Datasheet U-MOSVI-H SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 5.3A (Ta) 4.5V, 10V 81mOhm @ 2.7A, 10V 2.3V @ 100µA 4.7 nC @ 10 V ±20V 290 pF @ 10 V - 700mW (Ta) 150°C (TJ) - - Surface Mount VS-6 (2.9x2.8)
TPC6010-H(TE85L,FM Toshiba Semiconductor and Storage

TPC6010-H(TE85L,FM

MOSFET N-CH 60V 6.1A VS-6

Toshiba Semiconductor and Storage

9,673 -
Datasheet U-MOSVI-H SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 6.1A (Ta) 4.5V, 10V 59mOhm @ 3.1A, 10V 2.3V @ 100µA 12 nC @ 10 V ±20V 830 pF @ 10 V - 700mW (Ta) 150°C (TJ) - - Surface Mount VS-6 (2.9x2.8)
TPC6011(TE85L,F,M) Toshiba Semiconductor and Storage

TPC6011(TE85L,F,M)

MOSFET N-CH 30V 6A VS-6

Toshiba Semiconductor and Storage

2,346 -
Datasheet U-MOSIV SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6A (Ta) 4.5V, 10V 20mOhm @ 3A, 10V 2.5V @ 1mA 14 nC @ 10 V ±20V 640 pF @ 10 V - 700mW (Ta) 150°C (TJ) - - Surface Mount VS-6 (2.9x2.8)
TPC6012(TE85L,F,M) Toshiba Semiconductor and Storage

TPC6012(TE85L,F,M)

MOSFET N-CH 20V 6A VS-6

Toshiba Semiconductor and Storage

4,709 -
Datasheet U-MOSIV SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) 2.5V, 4.5V 20mOhm @ 3A, 4.5V 1.2V @ 200µA 9 nC @ 5 V ±12V 630 pF @ 10 V - 700mW (Ta) 150°C (TJ) - - Surface Mount VS-6 (2.9x2.8)
TPC6110(TE85L,F,M) Toshiba Semiconductor and Storage

TPC6110(TE85L,F,M)

MOSFET P-CH 30V 4.5A VS-6

Toshiba Semiconductor and Storage

6,510 -
Datasheet U-MOSVI SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 4.5A (Ta) - 56mOhm @ 2.2A, 10V 2V @ 100µA 14 nC @ 10 V - 510 pF @ 10 V - 700mW (Ta) 150°C (TJ) - - Surface Mount VS-6 (2.9x2.8)
TPC6113(TE85L,F,M) Toshiba Semiconductor and Storage

TPC6113(TE85L,F,M)

MOSFET P-CH 20V 5A VS-6

Toshiba Semiconductor and Storage

8,423 -
Datasheet U-MOSVI SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5A (Ta) 2.5V, 4.5V 55mOhm @ 2.5A, 4.5V 1.2V @ 200µA 10 nC @ 5 V ±12V 690 pF @ 10 V - 700mW (Ta) 150°C (TJ) - - Surface Mount VS-6 (2.9x2.8)
TPC8062-H,LQ(CM Toshiba Semiconductor and Storage

TPC8062-H,LQ(CM

MOSFET N-CH 30V 18A 8SOP

Toshiba Semiconductor and Storage

4,584 -
Datasheet U-MOSVII-H 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta) 4.5V, 10V 5.8mOhm @ 9A, 10V 2.3V @ 300µA 34 nC @ 10 V ±20V 2900 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

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Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

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Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.