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Single Diodes

Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

For BOM, shortage or hard-to-find requirements, send your part number and quantity to Winsun (HK) Electronics for availability, lead-time and quotation support.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
APT30D20BG Microchip Technology

APT30D20BG

DIODE GP 200V 30A TO247

Microchip Technology

141 -
Datasheet - TO-247-2 Tube Active Standard 200 V 30A 1.3 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 24 ns 250 µA @ 200 V - - - Through Hole TO-247 [B] -55°C ~ 175°C
IDD04SG60CXTMA2 Infineon Technologies

IDD04SG60CXTMA2

DIODE SIL CARB 600V 4A TO252-3

Infineon Technologies

8,891 -
Datasheet CoolSiC™+ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 600 V 4A 2.3 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 25 µA @ 600 V 80pF @ 1V, 1MHz - - Surface Mount PG-TO252-3 -55°C ~ 175°C
STPS15L25D STMicroelectronics

STPS15L25D

DIODE SCHOTTKY 25V 15A TO220AC

STMicroelectronics

2,507 -
Datasheet - TO-220-2 Tube Active Schottky 25 V 15A 460 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 1.3 mA @ 25 V - - - Through Hole TO-220AC 150°C (Max)
RBQ30TB45BHZC9 Rohm Semiconductor

RBQ30TB45BHZC9

AUTOMOTIVE SCHOTTKY BARRIER DIOD

Rohm Semiconductor

830 -
Datasheet - TO-220-2 Full Pack Bulk Active Schottky 45 V 30A 590 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 350 µA @ 45 V - Automotive AEC-Q101 Through Hole TO-220FN-2 150°C
DSEP12-12A IXYS

DSEP12-12A

DIODE GEN PURP 1.2KV 15A TO220AC

IXYS

428 -
Datasheet HiPerFRED™ TO-220-2 Tube Active Standard 1200 V 15A 2.75 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 100 µA @ 1200 V - - - Through Hole TO-220AC -55°C ~ 175°C
STTH1512GY-TR STMicroelectronics

STTH1512GY-TR

DIODE GEN PURP 1.2KV 15A D2PAK

STMicroelectronics

1,212 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 15A 1.9 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 105 ns 15 µA @ 1200 V - Automotive AEC-Q101 Surface Mount D2PAK -40°C ~ 175°C
VS-20ETS12-M3 Vishay General Semiconductor - Diodes Division

VS-20ETS12-M3

DIODE GEN PURP 1.2KV 20A TO220AC

Vishay General Semiconductor - Diodes Division

2,466 -
Datasheet - TO-220-2 Tube Active Standard 1200 V 20A 1 V @ 10 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1200 V - - - Through Hole TO-220AC -40°C ~ 150°C
VS-8EWS12STR-M3 Vishay General Semiconductor - Diodes Division

VS-8EWS12STR-M3

DIODE GEN PURP 1.2KV 8A D-PAK

Vishay General Semiconductor - Diodes Division

1,450 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 1200 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 1200 V - - - Surface Mount TO-252AA (DPAK) -55°C ~ 150°C
STTH6006W STMicroelectronics

STTH6006W

DIODE GEN PURP 600V 60A DO247

STMicroelectronics

1,099 -
Datasheet - DO-247-2 (Straight Leads) Tube Active Standard 600 V 60A 1.85 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 85 ns 50 µA @ 600 V - - - Through Hole DO-247 175°C (Max)
VS-60EPU04-N3 Vishay General Semiconductor - Diodes Division

VS-60EPU04-N3

DIODE GP 400V 60A TO247AC

Vishay General Semiconductor - Diodes Division

542 -
Datasheet FRED Pt® TO-247-2 Tube Active Standard 400 V 60A 1.25 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 85 ns 50 µA @ 400 V - - - Through Hole TO-247AC Modified -55°C ~ 175°C
IDH06G65C6XKSA1 Infineon Technologies

IDH06G65C6XKSA1

DIODE SIL CARB 650V 16A TO220-2

Infineon Technologies

576 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 16A 1.35 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 420 V 302pF @ 1V, 1MHz - - Through Hole PG-TO220-2 -55°C ~ 175°C
STTH3012D STMicroelectronics

STTH3012D

DIODE GEN PURP 1.2KV 30A TO220AC

STMicroelectronics

931 -
Datasheet - TO-220-2 Tube Active Standard 1200 V 30A 2.25 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 115 ns 20 µA @ 1200 V - - - Through Hole TO-220AC 175°C (Max)
MBRF40250TG onsemi

MBRF40250TG

DIODE SCHOTTKY 250V 40A TO220FP

onsemi

7,421 -
Datasheet SWITCHMODE™ TO-220-3 Full Pack Tube Active Schottky 250 V 40A 970 mV @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 30 µA @ 250 V 500pF @ 5V, 1MHz - - Through Hole TO-220FP -65°C ~ 150°C
D6025LTP Littelfuse Inc.

D6025LTP

DIODE GP 600V 15.9A TO220AB-L

Littelfuse Inc.

961 -
Datasheet - TO-220-3 Isolated Tab Tube Active Standard 600 V 15.9A - Standard Recovery >500ns, > 200mA (Io) 4 µs 10 µA @ 600 V - - - Through Hole TO-220AB-L -40°C ~ 125°C
APT30D100BG Microchip Technology

APT30D100BG

DIODE GEN PURP 1KV 30A TO247

Microchip Technology

710 -
Datasheet - TO-247-2 Tube Active Standard 1000 V 30A 2.3 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 290 ns 250 µA @ 1000 V - - - Through Hole TO-247 -55°C ~ 175°C
STTH30R04D STMicroelectronics

STTH30R04D

DIODE GEN PURP 400V 30A TO220AC

STMicroelectronics

1,199 -
Datasheet - TO-220-2 Tube Active Standard 400 V 30A 1.45 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 15 µA @ 400 V - - - Through Hole TO-220AC -40°C ~ 175°C
IDK06G65C5XTMA2 Infineon Technologies

IDK06G65C5XTMA2

DIODE SIL CARB 650V 6A TO263-2

Infineon Technologies

3,154 -
Datasheet CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.8 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 1.1 mA @ 650 V 190pF @ 1V, 1MHz - - Surface Mount PG-TO263-2 -55°C ~ 175°C
STTH30L06GY-TR STMicroelectronics

STTH30L06GY-TR

DIODE GEN PURP 600V 30A D2PAK

STMicroelectronics

11,130 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 30A 1.55 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 600 V - Automotive AEC-Q101 Surface Mount D2PAK -40°C ~ 175°C
VS-45EPS16L-M3 Vishay General Semiconductor - Diodes Division

VS-45EPS16L-M3

DIODE GEN PURP 1.6KV 45A TO247AD

Vishay General Semiconductor - Diodes Division

467 -
Datasheet - TO-247-2 Tube Active Standard 1600 V 45A 1.16 V @ 45 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1600 V - - - Through Hole TO-247AD -40°C ~ 150°C
APT60D40BG Microchip Technology

APT60D40BG

DIODE GP 400V 60A TO247

Microchip Technology

439 -
Datasheet - TO-247-2 Tube Active Standard 400 V 60A 1.5 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 37 ns 250 µA @ 400 V - - - Through Hole TO-247 [B] -55°C ~ 175°C
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WINSUN SOURCING SUPPORT

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Send the manufacturer, part number, quantity and target delivery requirement. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and hard-to-find or obsolete components.

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FREQUENTLY ASKED QUESTIONS

Single Diodes FAQ

Common questions about selecting, comparing and sourcing Single Diodes components through Winsun (HK) Electronics.

What should I check when selecting Single Diodes components?

Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.

Can Winsun help source specific Single Diodes part numbers?

Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.

Do you support shortage, obsolete or hard-to-find Single Diodes parts?

Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

How do I request a quote for Single Diodes components?

Submit an RFQ with the part number, manufacturer, quantity and target delivery requirement. Our sales team will review your request and follow up with current sourcing information.