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Single Diodes

Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

For BOM, shortage or hard-to-find requirements, send your part number and quantity to Winsun (HK) Electronics for availability, lead-time and quotation support.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
JAN1N5617 Microchip Technology

JAN1N5617

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

177 -
Datasheet - A, Axial Bulk Active Standard 400 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 400 V - Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
DSEP30-06A IXYS

DSEP30-06A

DIODE GEN PURP 600V 30A TO247AD

IXYS

990 -
Datasheet HiPerFRED™ TO-247-2 Tube Active Standard 600 V 30A 1.6 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 250 µA @ 600 V - - - Through Hole TO-247AD -55°C ~ 175°C
IDM08G120C5XTMA1 Infineon Technologies

IDM08G120C5XTMA1

DIODE SIL CARB 1.2KV 8A TO252-2

Infineon Technologies

1,688 -
Datasheet CoolSiC™+ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 8A 1.95 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 1200 V 365pF @ 1V, 1MHz - - Surface Mount PG-TO252-2 -55°C ~ 175°C
DNA30E2200PA IXYS

DNA30E2200PA

DIODE GEN PURP 2.2KV 30A TO220AC

IXYS

219 -
Datasheet - TO-220-2 Tube Active Standard 2200 V 30A 1.26 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 2200 V 7pF @ 700V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
1N5620 Microchip Technology

1N5620

DIODE GEN PURP 800V 1A AXIAL

Microchip Technology

300 -
Datasheet - A, Axial Bulk Active Standard 800 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 800 V - - - Through Hole A, Axial -65°C ~ 200°C
STPSC10H065DI STMicroelectronics

STPSC10H065DI

DIODE SIC 650V 10A TO220AC INS

STMicroelectronics

999 -
Datasheet - TO-220-2 Insulated, TO-220AC Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.75 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 650 V - - - Through Hole TO-220AC ins -40°C ~ 175°C
IDW100E60FKSA1 Infineon Technologies

IDW100E60FKSA1

DIODE GP 600V 150A TO247-3-1

Infineon Technologies

388 -
Datasheet - TO-247-3 Tube Active Standard 600 V 150A 2 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 120 ns 40 µA @ 600 V - - - Through Hole PG-TO247-3-1 -55°C ~ 175°C
C3D06065I Wolfspeed, Inc.

C3D06065I

DIODE SIL CARB 650V 13A TO220-2

Wolfspeed, Inc.

970 -
Datasheet Z-Rec® TO-220-2 Isolated Tab Tube Active SiC (Silicon Carbide) Schottky 650 V 13A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 295pF @ 0V, 1MHz - - Through Hole TO-220-2 Isolated Tab -55°C ~ 175°C
C3D08060A Wolfspeed, Inc.

C3D08060A

DIODE SIL CARB 600V 24A TO220-2

Wolfspeed, Inc.

357 -
Datasheet Z-Rec® TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 600 V 24A 1.8 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 441pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
1N3611 Microchip Technology

1N3611

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

341 -
Datasheet - A, Axial Bulk Active Standard 200 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 200 V - - - Through Hole A, Axial -65°C ~ 175°C
VS-30EPH06-N3 Vishay General Semiconductor - Diodes Division

VS-30EPH06-N3

DIODE GP 600V 30A TO247AC

Vishay General Semiconductor - Diodes Division

5,744 -
Datasheet FRED Pt® TO-247-2 Tube Active Standard 600 V 30A 2.6 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 31 ns 50 µA @ 600 V - - - Through Hole TO-247AC Modified -65°C ~ 175°C
STPSC12065DY STMicroelectronics

STPSC12065DY

DIODE SIL CARB 650V 12A TO220AC

STMicroelectronics

7,548 -
Datasheet ECOPACK®2 TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 12A 1.45 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 750pF @ 0V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC -40°C ~ 175°C
ISL9R3060G2-F085 onsemi

ISL9R3060G2-F085

DIODE GEN PURP 600V 30A TO247-2

onsemi

418 -
Datasheet Stealth™ TO-247-2 Tube Active Avalanche 600 V 30A 2.4 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 100 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-247-2 -55°C ~ 175°C
UJ3D1210TS Qorvo

UJ3D1210TS

DIODE SIL CARB 1.2KV 10A TO220-2

Qorvo

8,990 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 110 µA @ 1200 V 510pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
DLA40IM800PC-TRL IXYS

DLA40IM800PC-TRL

DIODE GEN PURP 800V 40A TO263AA

IXYS

1,266 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 800 V 40A 1.3 V @ 40 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 800 V 10pF @ 400V, 1MHz - - Surface Mount TO-263AA -55°C ~ 175°C
IDK08G120C5XTMA1 Infineon Technologies

IDK08G120C5XTMA1

DIODE SIC 1.2KV 22.8A TO263-1

Infineon Technologies

373 -
Datasheet CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 22.8A 1.95 V @ 8 A No Recovery Time > 500mA (Io) - 40 µA @ 1200 V 365pF @ 1V, 1MHz - - Surface Mount PG-TO263-2-1 -55°C ~ 175°C
DSI30-16AS-TRL IXYS

DSI30-16AS-TRL

DIODE GEN PURP 1.6KV 30A TO263AA

IXYS

2,638 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1600 V 30A 1.29 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 1600 V 10pF @ 400V, 1MHz - - Surface Mount TO-263AA -40°C ~ 175°C
DSEP29-12A IXYS

DSEP29-12A

DIODE GEN PURP 1.2KV 30A TO220AC

IXYS

774 -
Datasheet HiPerFRED™ TO-220-2 Tube Active Standard 1200 V 30A 2.75 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 250 µA @ 1200 V - - - Through Hole TO-220AC -55°C ~ 175°C
JANTX1N3611 Microchip Technology

JANTX1N3611

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

356 -
Datasheet - A, Axial Bulk Active Standard 200 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 200 V - Military MIL-PRF-19500/228 Through Hole A, Axial -65°C ~ 175°C
DSEI30-10A IXYS

DSEI30-10A

DIODE GEN PURP 1KV 30A TO247AD

IXYS

445 -
Datasheet - TO-247-2 Tube Active Standard 1000 V 30A 2.4 V @ 36 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 750 µA @ 1000 V - - - Through Hole TO-247AD -40°C ~ 150°C
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WINSUN SOURCING SUPPORT

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FREQUENTLY ASKED QUESTIONS

Single Diodes FAQ

Common questions about selecting, comparing and sourcing Single Diodes components through Winsun (HK) Electronics.

What should I check when selecting Single Diodes components?

Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.

Can Winsun help source specific Single Diodes part numbers?

Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.

Do you support shortage, obsolete or hard-to-find Single Diodes parts?

Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

How do I request a quote for Single Diodes components?

Submit an RFQ with the part number, manufacturer, quantity and target delivery requirement. Our sales team will review your request and follow up with current sourcing information.