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Single Diodes

Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
STTH30RQ06L2Y-TR STMicroelectronics

STTH30RQ06L2Y-TR

DIODE GEN PURP 600V 30A HU3PAK

STMicroelectronics

823 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active Standard 600 V 30A 2.95 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 40 µA @ 600 V - Automotive AEC-Q101 Surface Mount HU3PAK -40°C ~ 175°C
IDK12G65C5XTMA2 Infineon Technologies

IDK12G65C5XTMA2

DIODE SIL CARB 650V 12A TO263-2

Infineon Technologies

1,257 -
Datasheet CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 12A 1.8 V @ 12 A No Recovery Time > 500mA (Io) 0 ns - 360pF @ 1V, 1MHz - - Surface Mount PG-TO263-2 -55°C ~ 175°C
1N5614US Microchip Technology

1N5614US

DIODE GEN PURP 200V 1A D-5A

Microchip Technology

250 -
Datasheet - SQ-MELF, A Bulk Active Standard 200 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 200 V - - - Surface Mount D-5A -65°C ~ 200°C
IDL12G65C5XUMA2 Infineon Technologies

IDL12G65C5XUMA2

DIODE SIL CARB 650V 12A VSON-4

Infineon Technologies

6,146 -
Datasheet CoolSiC™+ 4-PowerTSFN Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 190 µA @ 650 V 360pF @ 1V, 1MHz - - Surface Mount PG-VSON-4 -55°C ~ 150°C
DSEI36-06AS-TUB IXYS

DSEI36-06AS-TUB

DIODE GEN PURP 600V 37A TO263AA

IXYS

1,403 -
Datasheet FRED TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Standard 600 V 37A 1.6 V @ 37 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 100 µA @ 600 V - - - Surface Mount TO-263AA -40°C ~ 150°C
C4D05120E-TR Wolfspeed, Inc.

C4D05120E-TR

DIODE SIL CARB 1.2KV 19A TO252-2

Wolfspeed, Inc.

1,520 -
Datasheet Z-Rec® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 19A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 150 µA @ 1200 V 390pF @ 0V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
1N5550 Microchip Technology

1N5550

DIODE GEN PURP 200V 3A AXIAL

Microchip Technology

262 -
Datasheet - B, Axial Bulk Active Standard 200 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 200 V - - - Through Hole B, Axial -65°C ~ 175°C
STTH75S12W STMicroelectronics

STTH75S12W

DIODE GEN PURP 1.2KV 75A DO247

STMicroelectronics

295 -
Datasheet - DO-247-2 (Straight Leads) Tube Active Standard 1200 V 75A 3.2 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 50 µA @ 1200 V - - - Through Hole DO-247 -40°C ~ 175°C
VS-40EPS12-M3 Vishay General Semiconductor - Diodes Division

VS-40EPS12-M3

DIODE GP 1.2KV 40A TO247AC

Vishay General Semiconductor - Diodes Division

343 -
Datasheet - TO-247-2 Tube Active Standard 1200 V 40A 1 V @ 20 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1200 V - - - Through Hole TO-247AC Modified -40°C ~ 150°C
FFSP2065A onsemi

FFSP2065A

DIODE SIL CARB 650V 25A TO220-2

onsemi

3,918 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 25A 1.75 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 1085pF @ 1V, 100kHz - - Through Hole TO-220-2 -55°C ~ 175°C
DNA30E2200PZ-TRL IXYS

DNA30E2200PZ-TRL

DIODE GEN PURP 2.2KV 30A TO263

IXYS

3,257 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 2200 V 30A 1.26 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 2200 V 7pF @ 700V, 1MHz - - Surface Mount TO-263 (D2PAK) -55°C ~ 150°C
C3D08060G Wolfspeed, Inc.

C3D08060G

DIODE SIL CARB 600V 24A TO263-2

Wolfspeed, Inc.

205 -
Datasheet Z-Rec® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active SiC (Silicon Carbide) Schottky 600 V 24A 1.8 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 441pF @ 0V, 1MHz - - Surface Mount TO-263-2 -55°C ~ 175°C
VS-80APS12-M3 Vishay General Semiconductor - Diodes Division

VS-80APS12-M3

DIODE GEN PURP 1.2KV 80A TO247AC

Vishay General Semiconductor - Diodes Division

3,977 -
Datasheet - TO-247-3 Tube Active Standard 1200 V 80A 1.17 V @ 80 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1200 V - - - Through Hole TO-247AC -40°C ~ 150°C
IDWD150E65E7XKSA1 Infineon Technologies

IDWD150E65E7XKSA1

DIODE GEN PURP 650V 200A TO247-2

Infineon Technologies

328 -
Datasheet - TO-247-2 Tube Active Standard 650 V 200A 2.1 V @ 150 A Fast Recovery =< 500ns, > 5A (Io) 97 ns 20 µA @ 650 V - - - Through Hole PG-TO247-2-2 -40°C ~ 175°C
DPG60IM300PC-TRL IXYS

DPG60IM300PC-TRL

DIODE GEN PURP 300V 60A TO263AA

IXYS

1,956 -
Datasheet HiPerFRED²™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 300 V 60A 1.43 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 1 µA @ 300 V - - - Surface Mount TO-263AA -55°C ~ 175°C
FFSM2065B onsemi

FFSM2065B

DIODE SIL CARB 650V 23.4A 4PQFN

onsemi

2,096 -
Datasheet - 4-PowerTSFN Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 23.4A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 866pF @ 1V, 100kHz - - Surface Mount 4-PQFN (8x8) -55°C ~ 175°C
STPSC10H12G2-TR STMicroelectronics

STPSC10H12G2-TR

DIODE SIL CARB 1.2KV 10A D2PAK

STMicroelectronics

570 -
Datasheet ECOPACK®2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.5 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 1200 V 725pF @ 0V, 1MHz - - Surface Mount D2PAK HV -40°C ~ 175°C
VS-60EPS08-M3 Vishay General Semiconductor - Diodes Division

VS-60EPS08-M3

DIODE GP 800V 60A TO247AC

Vishay General Semiconductor - Diodes Division

2,185 -
Datasheet - TO-247-2 Tube Active Standard 800 V 60A 1.09 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 800 V - - - Through Hole TO-247AC Modified -40°C ~ 150°C
VS-60EPS12-M3 Vishay General Semiconductor - Diodes Division

VS-60EPS12-M3

DIODE GP 1.2KV 60A TO247AC

Vishay General Semiconductor - Diodes Division

408 -
Datasheet - TO-247-2 Tube Active Standard 1200 V 60A 1.09 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1200 V - - - Through Hole TO-247AC Modified -40°C ~ 150°C
FFSB2065BDN-F085 onsemi

FFSB2065BDN-F085

DIODE SIC 650V 23.6A D2PAK-3

onsemi

659 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active SiC (Silicon Carbide) Schottky 650 V 23.6A 1.75 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 421pF @ 1V, 100kHz Automotive AEC-Q101 Surface Mount TO-263 (D2PAK) -55°C ~ 175°C
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Single Diodes FAQ

Common questions about selecting, comparing and sourcing Single Diodes components through Winsun (HK) Electronics.

What should I check when selecting Single Diodes components?

Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.

Can Winsun help source specific Single Diodes part numbers?

Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.

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Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

How do I request a quote for Single Diodes components?

Submit an RFQ with the part number, manufacturer, quantity and target delivery requirement. Our sales team will review your request and follow up with current sourcing information.