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Single Diodes

Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
63SPB100A SMC Diode Solutions

63SPB100A

DIODE SCHOTTKY 100V 60A SPD-2A

SMC Diode Solutions

4,833 -
Datasheet - SPD-2A Bulk Active Schottky 100 V 60A 870 mV @ 60 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 100 V 1500pF @ 5V, 1MHz - - Surface Mount SPD-2A -55°C ~ 175°C
STPSC20H12WL STMicroelectronics

STPSC20H12WL

DIODE SIL CARB 1.2KV 20A DO247

STMicroelectronics

142 -
Datasheet ECOPACK®2 DO-247-2 (Straight Leads) Tube Active SiC (Silicon Carbide) Schottky 1200 V 20A 1.5 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 1200 V 1650pF @ 0V, 1MHz - - Through Hole DO-247 -40°C ~ 175°C
DH60-16A IXYS

DH60-16A

DIODE GEN PURP 1.6KV 60A TO247AD

IXYS

892 -
Datasheet - TO-247-2 Tube Active Standard 1600 V 60A 2.04 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 230 ns 200 µA @ 1400 V 32pF @ 1200V, 1MHz - - Through Hole TO-247AD -55°C ~ 150°C
VS-HFA30PB120-N3 Vishay General Semiconductor - Diodes Division

VS-HFA30PB120-N3

DIODE GP 1.2KV 30A TO247AC

Vishay General Semiconductor - Diodes Division

154 -
Datasheet - TO-247-2 Tube Active Standard 1200 V 30A 4.1 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 170 ns 40 µA @ 1200 V - Automotive AEC-Q101 Through Hole TO-247AC Modified -55°C ~ 150°C
IDWD20G120C5XKSA1 Infineon Technologies

IDWD20G120C5XKSA1

DIODE SIL CARB 1.2KV 62A TO247-2

Infineon Technologies

240 -
Datasheet CoolSiC™+ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 62A 1.65 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 166 µA @ 1200 V 1368pF @ 1V, 1MHz - - Through Hole PG-TO247-2 -55°C ~ 175°C
C4D08120E Wolfspeed, Inc.

C4D08120E

DIODE SIL CARB 1.2KV 24.5A TO252

Wolfspeed, Inc.

863 -
Datasheet Z-Rec® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active SiC (Silicon Carbide) Schottky 1200 V 24.5A 3 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 250 µA @ 1200 V 560pF @ 0V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
GD15MPS17H GeneSiC Semiconductor

GD15MPS17H

DIODE SIL CARB 1.7KV 36A TO247-2

GeneSiC Semiconductor

1,214 -
Datasheet SiC Schottky MPS™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 36A 1.8 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1700 V 1082pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
IDW30G65C5XKSA1 Infineon Technologies

IDW30G65C5XKSA1

DIODE SIL CARB 650V 30A TO247-3

Infineon Technologies

931 -
Datasheet CoolSiC™+ TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 30A 1.7 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 220 µA @ 650 V 860pF @ 1V, 1MHz - - Through Hole PG-TO247-3 -55°C ~ 175°C
STPSC20H12G2Y-TR STMicroelectronics

STPSC20H12G2Y-TR

DIODE SIL CARB 1.2KV 20A D2PAK

STMicroelectronics

2,769 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 20A 1.5 V @ 20 A No Recovery Time > 500mA (Io) - 120 µA @ 1200 V 1650pF @ 0V, 1MHz Automotive AEC-Q101 Surface Mount D2PAK HV -40°C ~ 175°C
JANTXV1N5809US Microchip Technology

JANTXV1N5809US

DIODE GEN PURP 100V 3A B SQ-MELF

Microchip Technology

166 -
Datasheet - SQ-MELF, B Bulk Active Standard 100 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTXV1N5811US Microchip Technology

JANTXV1N5811US

DIODE GEN PURP 150V 3A B SQ-MELF

Microchip Technology

148 -
Datasheet - SQ-MELF, B Bulk Active Standard 150 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
DSDI60-16A IXYS

DSDI60-16A

DIODE GEN PURP 1.6KV 63A TO247AD

IXYS

328 -
Datasheet - TO-247-2 Tube Active Standard 1600 V 63A 4.1 V @ 70 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 2 mA @ 1600 V - - - Through Hole TO-247AD -40°C ~ 150°C
UJ3D06560KSD Qorvo

UJ3D06560KSD

DIODE SIL CARB 650V 30A TO247-3

Qorvo

6,369 -
Datasheet - TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 30A 1.7 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 740 µA @ 650 V 1980pF @ 1V, 1MHz - - Through Hole TO-247-3 -55°C ~ 175°C
VS-70HFL100S05 Vishay General Semiconductor - Diodes Division

VS-70HFL100S05

DIODE GEN PURP 1KV 70A DO203AB

Vishay General Semiconductor - Diodes Division

244 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 1000 V 70A 1.85 V @ 219.8 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 100 µA @ 1000 V - - - Chassis, Stud Mount DO-203AB (DO-5) -40°C ~ 125°C
VS-85HFR60 Vishay General Semiconductor - Diodes Division

VS-85HFR60

DIODE GEN PURP 600V 85A DO203AB

Vishay General Semiconductor - Diodes Division

120 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 600 V 85A 1.2 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 600 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
JANS1N6642 Microchip Technology

JANS1N6642

DIODE GEN PURP 75V 300MA DO204AH

Microchip Technology

434 -
Datasheet - DO-204AH, DO-35, Axial Bulk Active Standard 75 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 75 V 5pF @ 0V, 1MHz Military MIL-PRF-19500/578 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
E4D10120A Wolfspeed, Inc.

E4D10120A

DIODE SIL CARB 1.2KV 33A TO220-2

Wolfspeed, Inc.

386 -
Datasheet E-Series TO-220-2 Tube Last Time Buy SiC (Silicon Carbide) Schottky 1200 V 33A 1.8 V @ 10 A No Recovery Time > 500mA (Io) - 200 µA @ 1200 V 777pF @ 0V, 1MHz Automotive AEC-Q101 Through Hole TO-220-2 -55°C ~ 175°C
GD50MPS12H GeneSiC Semiconductor

GD50MPS12H

DIODE SIL CARB 1.2KV 92A TO247-2

GeneSiC Semiconductor

124 -
Datasheet SiC Schottky MPS™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 92A 1.8 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 15 µA @ 1200 V 1835pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
C4D20120H Wolfspeed, Inc.

C4D20120H

DIODE SIL CARB 1.2KV 54A TO247-2

Wolfspeed, Inc.

410 -
Datasheet Z-Rec® TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 54A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1500pF @ 0V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
E4D20120G Wolfspeed, Inc.

E4D20120G

DIODE SIL CARB 1.2KV 56A TO263-2

Wolfspeed, Inc.

2,376 -
Datasheet E-Series TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Last Time Buy SiC (Silicon Carbide) Schottky 1200 V 56A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1474pF @ 0V, 1MHz Automotive - Surface Mount TO-263-2 -55°C ~ 175°C
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Single Diodes FAQ

Common questions about selecting, comparing and sourcing Single Diodes components through Winsun (HK) Electronics.

What should I check when selecting Single Diodes components?

Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.

Can Winsun help source specific Single Diodes part numbers?

Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.

Do you support shortage, obsolete or hard-to-find Single Diodes parts?

Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

How do I request a quote for Single Diodes components?

Submit an RFQ with the part number, manufacturer, quantity and target delivery requirement. Our sales team will review your request and follow up with current sourcing information.