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Single Diodes

Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
C3D08065E Wolfspeed, Inc.

C3D08065E

DIODE SIL CARB 650V 25.5A TO252

Wolfspeed, Inc.

2,740 -
Datasheet Z-Rec® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active SiC (Silicon Carbide) Schottky 650 V 25.5A 1.8 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 395pF @ 0V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
IDK10G65C5XTMA2 Infineon Technologies

IDK10G65C5XTMA2

DIODE SIL CARB 650V 10A TO263-2

Infineon Technologies

1,857 -
Datasheet CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns - 300pF @ 1V, 1MHz - - Surface Mount PG-TO263-2 -55°C ~ 175°C
STPSC10H12GY-TR STMicroelectronics

STPSC10H12GY-TR

DIODE SIL CARB 1.2KV 10A D2PAK

STMicroelectronics

1,893 -
Datasheet ECOPACK®2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.5 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 1200 V 725pF @ 0V, 1MHz Automotive AEC-Q101 Surface Mount D2PAK -40°C ~ 175°C
IDL10G65C5XUMA2 Infineon Technologies

IDL10G65C5XUMA2

DIODE SIL CARB 650V 10A VSON-4

Infineon Technologies

151 -
Datasheet CoolSiC™+ 4-PowerTSFN Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 180 µA @ 650 V 300pF @ 1V, 1MHz - - Surface Mount PG-VSON-4 -55°C ~ 150°C
VS-65EPS12LHM3 Vishay General Semiconductor - Diodes Division

VS-65EPS12LHM3

DIODE GEN PURP 1.2KV 65A TO247AD

Vishay General Semiconductor - Diodes Division

1,025 -
Datasheet - TO-247-2 Tube Active Standard 1200 V 65A 1.12 V @ 65 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1200 V - Automotive AEC-Q101 Through Hole TO-247AD -40°C ~ 150°C
STPSC10H12B2-TR STMicroelectronics

STPSC10H12B2-TR

DIODE SIL CARB 1.2KV 10A DPAK HV

STMicroelectronics

4,653 -
Datasheet ECOPACK®2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.5 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 1200 V 725pF @ 0V, 1MHz - - Surface Mount DPAK HV -40°C ~ 175°C
IDH10G65C5XKSA2 Infineon Technologies

IDH10G65C5XKSA2

DIODE SIL CARB 650V 10A TO220-1

Infineon Technologies

1,046 -
Datasheet CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 180 µA @ 650 V 300pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
STTH6010W STMicroelectronics

STTH6010W

DIODE GEN PURP 1KV 60A DO247

STMicroelectronics

787 -
Datasheet - DO-247-2 (Straight Leads) Tube Active Standard 1000 V 60A 2 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 115 ns 20 µA @ 1000 V - - - Through Hole DO-247 175°C (Max)
STPSC12065G2-TR STMicroelectronics

STPSC12065G2-TR

DIODE SIL CARBIDE 650V 12A D2PAK

STMicroelectronics

1,155 -
Datasheet ECOPACK®2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 12A 1.45 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 150 µA @ 650 V 750pF @ 0V, 1MHz - - Surface Mount D2PAK -40°C ~ 175°C
DSEI30-06A IXYS

DSEI30-06A

DIODE GEN PURP 600V 37A TO247AD

IXYS

821 -
Datasheet - TO-247-2 Tube Active Standard 600 V 37A 1.6 V @ 37 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 100 µA @ 600 V - - - Through Hole TO-247AD -40°C ~ 150°C
JANTX1N5806 Microchip Technology

JANTX1N5806

DIODE GEN PURP 150V 1A AXIAL

Microchip Technology

149 -
Datasheet - A, Axial Bulk Active Standard 150 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Through Hole A, Axial -65°C ~ 175°C
GD30MPS06A GeneSiC Semiconductor

GD30MPS06A

DIODE SIL CARB 650V 30A TO220-2

GeneSiC Semiconductor

1,744 -
Datasheet SiC Schottky MPS™ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 30A - No Recovery Time > 500mA (Io) 0 ns - - - - Through Hole TO-220-2 175°C
DNA30EM2200PZ-TRL IXYS

DNA30EM2200PZ-TRL

DIODE GEN PURP 2.2KV 30A TO263AA

IXYS

1,151 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 2200 V 30A 1.26 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 2200 V 7pF @ 700V, 1MHz - - Surface Mount TO-263AA -55°C ~ 150°C
STPSC10H12G-TR STMicroelectronics

STPSC10H12G-TR

DIODE SIL CARB 1.2KV 10A D2PAK

STMicroelectronics

1,955 -
Datasheet ECOPACK® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.5 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 1200 V 725pF @ 0V, 1MHz - - Surface Mount D2PAK -40°C ~ 175°C
1N5804 Microchip Technology

1N5804

DIODE GEN PURP 100V 1A AXIAL

Microchip Technology

299 -
Datasheet - A, Axial Bulk Active Standard 100 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 100 V 25pF @ 10V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
C3D10065E Wolfspeed, Inc.

C3D10065E

DIODE SIL CARB 650V 32A TO252-2

Wolfspeed, Inc.

7,911 -
Datasheet Z-Rec® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active SiC (Silicon Carbide) Schottky 650 V 32A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 460.5pF @ 0V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
C6D10065Q-TR Wolfspeed, Inc.

C6D10065Q-TR

DIODE SIL CARBIDE 650V 39A 4QFN

Wolfspeed, Inc.

1,573 -
Datasheet - 4-PowerVQFN Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 39A 1.5 V @ 10 A No Recovery Time > 500mA (Io) - 50 µA @ 650 V 611pF @ 0V, 1MHz - - Surface Mount 4-QFN (8x8) -55°C ~ 175°C
C6D10065E Wolfspeed, Inc.

C6D10065E

DIODE SIL CARB 650V 35A TO252-2

Wolfspeed, Inc.

3,633 -
Datasheet Z-Rec® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active SiC (Silicon Carbide) Schottky 650 V 35A 1.5 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 611pF @ 0V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
APT60S20SG Microchip Technology

APT60S20SG

DIODE SCHOTTKY 200V 75A D3

Microchip Technology

187 -
Datasheet - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active Schottky 200 V 75A 900 mV @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 1 mA @ 200 V - - - Surface Mount D3PAK -55°C ~ 150°C
VS-HFA15PB60-N3 Vishay General Semiconductor - Diodes Division

VS-HFA15PB60-N3

DIODE GP 600V 15A TO247AC

Vishay General Semiconductor - Diodes Division

194 -
Datasheet HEXFRED® TO-247-2 Tube Active Standard 600 V 15A 1.7 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 10 µA @ 600 V - - - Through Hole TO-247AC Modified -55°C ~ 150°C
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Single Diodes FAQ

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What should I check when selecting Single Diodes components?

Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.

Can Winsun help source specific Single Diodes part numbers?

Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.

Do you support shortage, obsolete or hard-to-find Single Diodes parts?

Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

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Submit an RFQ with the part number, manufacturer, quantity and target delivery requirement. Our sales team will review your request and follow up with current sourcing information.