Single Diodes

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
FFSD08120A DIODE SIC 1.2KV 22.5A TO252AA onsemi	2,010	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	22.5A	1.75 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	538pF @ 1V, 100kHz	-	-	Surface Mount	TO-252AA	-55°C ~ 175°C
STPSC10H12G2Y-TR DIODE SIL CARB 1.2KV 10A D2PAK STMicroelectronics	498	-	RFQ	Datasheet	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 1200 V	725pF @ 0V, 1MHz	Automotive	AEC-Q101	Surface Mount	D2PAK HV	-40°C ~ 175°C
1N5802 DIODE GEN PURP 50V 1A AXIAL Microchip Technology	298	-	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	50 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 50 V	25pF @ 10V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 175°C
VS-16F120 DIODE GEN PURP 1.2KV 16A DO203AA Vishay General Semiconductor - Diodes Division	104	-	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	1200 V	16A	1.23 V @ 50 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 1200 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
1N5807 DIODE GEN PURP 50V 3A AXIAL Microchip Technology	198	-	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	50 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 50 V	60pF @ 10V, 1MHz	-	-	Through Hole	B, Axial	-65°C ~ 175°C
JANTX1N5417 DIODE GEN PURP 200V 3A AXIAL Microchip Technology	204	-	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	200 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 200 V	-	Military	MIL-PRF-19500/411	Through Hole	B, Axial	-65°C ~ 175°C
DH20-18A DIODE GEN PURP 1.8KV 20A TO247 IXYS	129	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1800 V	20A	2.24 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	50 µA @ 1800 V	-	-	-	Through Hole	TO-247	-55°C ~ 150°C
1N5615US DIODE GEN PURP 200V 1A D-5A Microchip Technology	630	-	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	200 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	500 nA @ 200 V	45pF @ 12V, 1MHz	-	-	Surface Mount	D-5A	-65°C ~ 175°C
VS-60EPU02-N3 DIODE GP 200V 60A TO247AC Vishay General Semiconductor - Diodes Division	554	-	RFQ	Datasheet	FRED Pt®	TO-247-2	Tube	Active	Standard	200 V	60A	1.08 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	28 ns	50 µA @ 200 V	-	-	-	Through Hole	TO-247AC Modified	-55°C ~ 175°C
JANTX1N6642 DIODE GEN PURP 75V 300MA DO35 Microchip Technology	6,996	-	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Active	Standard	75 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	500 nA @ 75 V	5pF @ 0V, 1MHz	Military	MIL-PRF-19500/578	Through Hole	DO-204AH (DO-35)	-65°C ~ 175°C
1N3881 DIODE GEN PURP 200V 6A DO4 GeneSiC Semiconductor	414	-	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	200 V	6A	1.4 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	15 µA @ 50 V	-	-	-	Chassis, Stud Mount	DO-4	-65°C ~ 150°C
GD20MPS12H DIODE SIL CARB 1.2KV 39A TO247-2 GeneSiC Semiconductor	2,961	-	RFQ	Datasheet	SiC Schottky MPS™	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	39A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	10 µA @ 1200 V	737pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
S4D15120H DIODE SIL CARB 1.2KV 15A TO247AC SMC Diode Solutions	634	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	15A	1.8 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	35 µA @ 1200 V	1200pF @ 0V, 1MHz	-	-	Through Hole	TO-247AC	-55°C ~ 175°C
STPSC20065WY DIODE SIL CARBIDE 650V 20A DO247 STMicroelectronics	258	-	RFQ	Datasheet	ECOPACK®2	DO-247-2 (Straight Leads)	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.45 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 650 V	1250pF @ 0V, 1MHz	Automotive	AEC-Q101	Through Hole	DO-247	-40°C ~ 175°C
FFSB3065B DIODE SIL CARB 650V 73A D2PAK-2 onsemi	3,732	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	73A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	1280pF @ 1V, 100kHz	-	-	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C
IDDD20G65C6XTMA1 DIODE SIL CARB 650V 51A HDSOP-10 Infineon Technologies	606	-	RFQ	Datasheet	CoolSiC™+	10-PowerSOP Module	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	51A	-	No Recovery Time > 500mA (Io)	0 ns	67 µA @ 420 V	970pF @ 1V, 1MHz	-	-	Surface Mount	PG-HDSOP-10-1	-55°C ~ 175°C
VS-12FR120 DIODE GEN PURP 1.2KV 12A DO203AA Vishay General Semiconductor - Diodes Division	475	-	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	1200 V	12A	1.26 V @ 38 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 1200 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
VS-40HF40 DIODE GEN PURP 400V 40A DO203AB Vishay General Semiconductor - Diodes Division	221	-	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	400 V	40A	1.3 V @ 125 A	Standard Recovery >500ns, > 200mA (Io)	-	9 mA @ 400 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 190°C
JANTX1N5554 DIODE GEN PURP 1KV 5A AXIAL Microchip Technology	118	-	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	1000 V	5A	1.3 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	2 µA @ 1000 V	-	Military	MIL-PRF-19500/420	Through Hole	B, Axial	-65°C ~ 175°C
DSEI60-12A DIODE GEN PURP 1.2KV 52A TO247AD IXYS	561	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	52A	2.55 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	2.2 mA @ 1200 V	-	-	-	Through Hole	TO-247AD	-40°C ~ 150°C

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