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FILTERED PRODUCT SELECTION

Single Diodes

Use the filters and product table below to compare Single Diodes components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

Parametric Selection Filter options by technical parameters
Stock & Datasheets Review availability and technical references
RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
TRS4E65H,S1Q Toshiba Semiconductor and Storage

TRS4E65H,S1Q

G3 SIC-SBD 650V 4A TO-220-2L

Toshiba Semiconductor and Storage

341 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 4A 1.35 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 55 µA @ 650 V 263pF @ 1V, 1MHz - - Through Hole TO-220-2L 175°C
TRS6V65H,LQ Toshiba Semiconductor and Storage

TRS6V65H,LQ

G3 SIC-SBD 650V 6A DFN8X8

Toshiba Semiconductor and Storage

4,803 -
Datasheet - 4-VSFN Exposed Pad Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.35 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 650 V 392pF @ 1V, 1MHz - - Surface Mount 4-DFN-EP (8x8) 175°C
TRS6E65H,S1Q Toshiba Semiconductor and Storage

TRS6E65H,S1Q

G3 SIC-SBD 650V 6A TO-220-2L

Toshiba Semiconductor and Storage

194 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 6A 1.35 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 650 V 392pF @ 1V, 1MHz - - Through Hole TO-220-2L 175°C
TRS8E65H,S1Q Toshiba Semiconductor and Storage

TRS8E65H,S1Q

G3 SIC-SBD 650V 8A TO-220-2L

Toshiba Semiconductor and Storage

338 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.35 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 90 µA @ 650 V 520pF @ 1V, 1MHz - - Through Hole TO-220-2L 175°C
TRS10V65H,LQ Toshiba Semiconductor and Storage

TRS10V65H,LQ

G3 SIC-SBD 650V 10A DFN8X8

Toshiba Semiconductor and Storage

3,975 -
Datasheet - 4-VSFN Exposed Pad Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.35 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 649pF @ 1V, 1MHz - - Surface Mount 4-DFN-EP (8x8) 175°C
TRS12V65H,LQ Toshiba Semiconductor and Storage

TRS12V65H,LQ

G3 SIC-SBD 650V 12A DFN8X8

Toshiba Semiconductor and Storage

4,472 -
Datasheet - 4-VSFN Exposed Pad Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 12A 1.35 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 650 V 778pF @ 1V, 1MHz - - Surface Mount 4-DFN-EP (8x8) 175°C
TRS12E65H,S1Q Toshiba Semiconductor and Storage

TRS12E65H,S1Q

G3 SIC-SBD 650V 12A TO-220-2L

Toshiba Semiconductor and Storage

370 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 12A 1.35 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 650 V 778pF @ 1V, 1MHz - - Through Hole TO-220-2L 175°C
CBS10S40,L3F Toshiba Semiconductor and Storage

CBS10S40,L3F

DIODE SCHOTTKY 40V 1A CST2B

Toshiba Semiconductor and Storage

8,993 -
Datasheet - 2-SMD, No Lead Tape & Reel (TR) Obsolete Schottky 40 V 1A 550 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 150 µA @ 40 V 120pF @ 0V, 1MHz - - Surface Mount CST2B 125°C (Max)
CBS10S30,L3F Toshiba Semiconductor and Storage

CBS10S30,L3F

DIODE SCHOTTKY 20V 1A CST2B

Toshiba Semiconductor and Storage

6,608 -
Datasheet - 2-SMD, No Lead Tape & Reel (TR) Obsolete Schottky 20 V 1A 450 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 30 V 135pF @ 0V, 1MHz - - Surface Mount CST2B 125°C (Max)
CCS15S30,L3F Toshiba Semiconductor and Storage

CCS15S30,L3F

DIODE SCHOTTKY 20V 1.5A CST2C

Toshiba Semiconductor and Storage

29,761 -
Datasheet - 2-SMD, No Lead Tape & Reel (TR) Active Schottky 20 V 1.5A 400 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 30 V 200pF @ 0V, 1MHz - - Surface Mount CST2C 125°C (Max)
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WINSUN SOURCING SUPPORT

Need Help Sourcing Single Diodes?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

Single Diodes FAQ

Common questions about filtering, comparing and sourcing Single Diodes components.

How can I narrow the Single Diodes selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific Single Diodes part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.