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FILTERED PRODUCT SELECTION

Single Diodes

Use the filters and product table below to compare Single Diodes components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

Parametric Selection Filter options by technical parameters
Stock & Datasheets Review availability and technical references
RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
CRG07(TE85L,Q,M) Toshiba Semiconductor and Storage

CRG07(TE85L,Q,M)

DIODE GEN PURP 400V 700MA S-FLAT

Toshiba Semiconductor and Storage

145 -
Datasheet - SOD-123F Tape & Reel (TR) Active Standard 400 V 700mA 1.1 V @ 700 mA Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 400 V - - - Surface Mount S-FLAT (1.6x3.5) 175°C (Max)
TRS10E65H,S1Q Toshiba Semiconductor and Storage

TRS10E65H,S1Q

G3 SIC-SBD 650V 10A TO-220-2L

Toshiba Semiconductor and Storage

68 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.35 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 649pF @ 1V, 1MHz - - Through Hole TO-220-2L 175°C
TRS10H120H,S1Q Toshiba Semiconductor and Storage

TRS10H120H,S1Q

1200V 3RDGEN SIC-SBD 10A TO-247-

Toshiba Semiconductor and Storage

60 -
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 38A 1.45 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 1200 V 1148pF @ 1V, 1MHz - - Through Hole TO-247-2L 175°C
TRS15H120H,S1Q Toshiba Semiconductor and Storage

TRS15H120H,S1Q

1200V 3RDGEN SIC-SBD 15A TO-247-

Toshiba Semiconductor and Storage

60 -
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 50A 1.45 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 1673pF @ 1V, 1MHz - - Through Hole TO-247-2L 175°C
TRS20H120H,S1Q Toshiba Semiconductor and Storage

TRS20H120H,S1Q

1200V 3RDGEN SIC-SBD 20A TO-247-

Toshiba Semiconductor and Storage

60 -
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 61A 1.45 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 130 µA @ 1200 V 2070pF @ 1V, 1MHz - - Through Hole TO-247-2L 175°C
CUS520,H3F Toshiba Semiconductor and Storage

CUS520,H3F

DIODE SCHOTTKY 30V 200MA USC

Toshiba Semiconductor and Storage

3,086 -
Datasheet - SC-76, SOD-323 Tape & Reel (TR) Active Schottky 30 V 200mA 280 mV @ 10 mA Small Signal =< 200mA (Io), Any Speed - 5 µA @ 30 V 17pF @ 0V, 1MHz - - Surface Mount USC 125°C (Max)
BAS316,H3F Toshiba Semiconductor and Storage

BAS316,H3F

DIODE GEN PURP 100V 250MA USC

Toshiba Semiconductor and Storage

4 -
Datasheet - SC-76, SOD-323 Tape & Reel (TR) Active Standard 100 V 250mA 1.25 V @ 150 mA Fast Recovery =< 500ns, > 200mA (Io) 3 ns 200 nA @ 80 V 0.35pF @ 0V, 1MHz - - Surface Mount USC 150°C (Max)
CUS357,H3F Toshiba Semiconductor and Storage

CUS357,H3F

DIODE SCHOTTKY 40V 100MA USC

Toshiba Semiconductor and Storage

6,848 -
Datasheet - SC-76, SOD-323 Tape & Reel (TR) Active Schottky 40 V 100mA 600 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed - 5 µA @ 40 V 11pF @ 0V, 1MHz - - Surface Mount USC 125°C (Max)
JDH2S02SL,L3F Toshiba Semiconductor and Storage

JDH2S02SL,L3F

DIODE SCHOTTKY 10V 10MA SL2

Toshiba Semiconductor and Storage

2,449 -
Datasheet - 2-SMD, No Lead Tape & Reel (TR) Active Schottky 10 V 10mA - Small Signal =< 200mA (Io), Any Speed - 25 µA @ 500 mV 0.25pF @ 200mV, 1MHz - - Surface Mount SL2 125°C (Max)
TRS2E65F,S1Q Toshiba Semiconductor and Storage

TRS2E65F,S1Q

DIODE SIL CARB 650V 2A TO220-2L

Toshiba Semiconductor and Storage

23 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 2A 1.6 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 8.7pF @ 650V, 1MHz - - Through Hole TO-220-2L 175°C (Max)
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WINSUN SOURCING SUPPORT

Need Help Sourcing Single Diodes?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

Single Diodes FAQ

Common questions about filtering, comparing and sourcing Single Diodes components.

How can I narrow the Single Diodes selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific Single Diodes part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.