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FILTERED PRODUCT SELECTION

Single Diodes

Use the filters and product table below to compare Single Diodes components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

Parametric Selection Filter options by technical parameters
Stock & Datasheets Review availability and technical references
RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
1SS196(TE85L,F) Toshiba Semiconductor and Storage

1SS196(TE85L,F)

DIODE GEN PURP 80V 100MA SC59-3

Toshiba Semiconductor and Storage

2 -
Datasheet - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active Standard 80 V 100mA 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 4 ns 500 nA @ 80 V 3pF @ 0V, 1MHz - - Surface Mount SC-59-3 125°C (Max)
1SS397TE85LF Toshiba Semiconductor and Storage

1SS397TE85LF

DIODE GEN PURP 400V 100MA SC70

Toshiba Semiconductor and Storage

6,818 -
Datasheet - SC-70, SOT-323 Tape & Reel (TR) Active Standard 400 V 100mA 1.3 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 500 ns 1 µA @ 400 V 5pF @ 0V, 1MHz - - Surface Mount SC-70 125°C (Max)
CMF04(TE12L,Q,M) Toshiba Semiconductor and Storage

CMF04(TE12L,Q,M)

DIODE GEN PURP 800V 500MA M-FLAT

Toshiba Semiconductor and Storage

7,611 -
Datasheet - SOD-128 Tape & Reel (TR) Active Standard 800 V 500mA 2.5 V @ 500 mA Fast Recovery =< 500ns, > 200mA (Io) 100 ns 50 µA @ 800 V - - - Surface Mount M-FLAT (2.4x3.8) -40°C ~ 150°C
TRS3E65F,S1Q Toshiba Semiconductor and Storage

TRS3E65F,S1Q

DIODE SIL CARB 650V 3A TO220-2L

Toshiba Semiconductor and Storage

9,681 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 3A 1.6 V @ 3 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 12pF @ 650V, 1MHz - - Through Hole TO-220-2L 175°C (Max)
TRS4E65F,S1Q Toshiba Semiconductor and Storage

TRS4E65F,S1Q

DIODE SIL CARB 650V 4A TO220-2L

Toshiba Semiconductor and Storage

9,142 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 4A 1.6 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 16pF @ 650V, 1MHz - - Through Hole TO-220-2L 175°C (Max)
TRS8E65F,S1Q Toshiba Semiconductor and Storage

TRS8E65F,S1Q

DIODE SIL CARB 650V 8A TO220-2L

Toshiba Semiconductor and Storage

8,401 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.6 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 28pF @ 650V, 1MHz - - Through Hole TO-220-2L 175°C (Max)
TRS10E65F,S1Q Toshiba Semiconductor and Storage

TRS10E65F,S1Q

DIODE SIL CARB 650V 10A TO220-2L

Toshiba Semiconductor and Storage

3,742 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 36pF @ 650V, 1MHz - - Through Hole TO-220-2L 175°C (Max)
TRS10A65F,S1Q Toshiba Semiconductor and Storage

TRS10A65F,S1Q

DIODE SIL CARB 650V 10A TO220F

Toshiba Semiconductor and Storage

4,007 -
Datasheet - TO-220-2 Full Pack Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 36pF @ 650V, 1MHz - - Through Hole TO-220F-2L 175°C (Max)
TRS4A65F,S1Q Toshiba Semiconductor and Storage

TRS4A65F,S1Q

DIODE SIL CARBIDE 650V 4A TO220F

Toshiba Semiconductor and Storage

4,029 -
Datasheet - TO-220-2 Full Pack Tube Active SiC (Silicon Carbide) Schottky 650 V 4A 1.6 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 16pF @ 650V, 1MHz - - Through Hole TO-220F-2L 175°C (Max)
TRS12E65F,S1Q Toshiba Semiconductor and Storage

TRS12E65F,S1Q

DIODE SIL CARB 650V 12A TO220-2L

Toshiba Semiconductor and Storage

5,715 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 90 µA @ 650 V 65pF @ 650V, 1MHz - - Through Hole TO-220-2L 175°C (Max)
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WINSUN SOURCING SUPPORT

Need Help Sourcing Single Diodes?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

Single Diodes FAQ

Common questions about filtering, comparing and sourcing Single Diodes components.

How can I narrow the Single Diodes selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific Single Diodes part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.