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Single Diodes

Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

For BOM, shortage or hard-to-find requirements, send your part number and quantity to Winsun (HK) Electronics for availability, lead-time and quotation support.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
C6D06065G Wolfspeed, Inc.

C6D06065G

DIODE SIL CARB 650V 23A TO263-2

Wolfspeed, Inc.

1,121 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active SiC (Silicon Carbide) Schottky 650 V 23A 1.4 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 393pF @ 0V, 1MHz - - Surface Mount TO-263-2 -55°C ~ 175°C
C6D06065A Wolfspeed, Inc.

C6D06065A

DIODE SIL CARB 650V 24A TO220-2

Wolfspeed, Inc.

773 -
Datasheet Z-Rec® TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 24A 1.5 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V 394pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
IDW75E60FKSA1 Infineon Technologies

IDW75E60FKSA1

DIODE GP 600V 120A TO247-3-1

Infineon Technologies

454 -
Datasheet - TO-247-3 Tube Active Standard 600 V 120A 2 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 121 ns 40 µA @ 600 V - - - Through Hole PG-TO247-3-1 -55°C ~ 175°C
VS-8EWF02S-M3 Vishay General Semiconductor - Diodes Division

VS-8EWF02S-M3

DIODE GEN PURP 200V 8A DPAK

Vishay General Semiconductor - Diodes Division

879 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active Standard 200 V 8A 1.2 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 100 µA @ 200 V - - - Surface Mount TO-252AA (DPAK) -40°C ~ 150°C
DHG10I1800PA IXYS

DHG10I1800PA

DIODE GEN PURP 1.8KV 10A TO220AC

IXYS

225 -
Datasheet - TO-220-2 Tube Active Standard 1800 V 10A 2.23 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 50 µA @ 1800 V 3pF @ 900V, 1MHz - - Through Hole TO-220AC -55°C ~ 150°C
DUR30120 Littelfuse Inc.

DUR30120

DIODE GEN PURP 1.2KV 30A TO220AB

Littelfuse Inc.

884 -
Datasheet DUR TO-220-3 Tube Active Standard 1200 V 30A 2.75 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 250 µA @ 1200 V - - - Through Hole TO-220AB -55°C ~ 150°C
STPSC6H065DI STMicroelectronics

STPSC6H065DI

DIODE SIC 650V 6A TO220AC INS

STMicroelectronics

800 -
Datasheet - TO-220-2 Insulated, TO-220AC Tube Active SiC (Silicon Carbide) Schottky 650 V 6A 1.75 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) - 60 µA @ 650 V - - - Through Hole TO-220AC ins -40°C ~ 175°C
STBR3012WY STMicroelectronics

STBR3012WY

DIODE GEN PURP 1.2KV 30A DO247

STMicroelectronics

146 -
Datasheet ECOPACK®2 DO-247-2 (Straight Leads) Tube Active Standard 1200 V 30A 1.3 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 2 µA @ 1200 V - Automotive AEC-Q101 Through Hole DO-247 -40°C ~ 175°C
STTH30L06WY STMicroelectronics

STTH30L06WY

DIODE GEN PURP 600V 30A DO247

STMicroelectronics

374 -
Datasheet - DO-247-2 (Straight Leads) Tube Active Standard 600 V 30A 1.55 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 600 V - Automotive AEC-Q101 Through Hole DO-247 -40°C ~ 175°C
STTH3012W STMicroelectronics

STTH3012W

DIODE GEN PURP 1.2KV 30A DO247

STMicroelectronics

720 -
Datasheet - DO-247-2 (Straight Leads) Tube Active Standard 1200 V 30A 2.25 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 115 ns 20 µA @ 1200 V - - - Through Hole DO-247 175°C (Max)
C3D04065A Wolfspeed, Inc.

C3D04065A

DIODE SIL CARB 650V 13.5A TO220

Wolfspeed, Inc.

1,184 -
Datasheet Z-Rec® TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 13.5A 1.8 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 251pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
STTH61W04SW STMicroelectronics

STTH61W04SW

DIODE GEN PURP 400V 60A TO247

STMicroelectronics

270 -
Datasheet - TO-247-3 Tube Active Standard 400 V 60A 1.35 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 20 µA @ 400 V - - - Through Hole TO-247 175°C (Max)
IDDD08G65C6XTMA1 Infineon Technologies

IDDD08G65C6XTMA1

DIODE SIL CARB 650V 24A HDSOP-10

Infineon Technologies

1,875 -
Datasheet CoolSiC™+ 10-PowerSOP Module Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 24A - No Recovery Time > 500mA (Io) 0 ns 27 µA @ 420 V 401pF @ 1V, 1MHz - - Surface Mount PG-HDSOP-10-1 -55°C ~ 175°C
STPSC10065D STMicroelectronics

STPSC10065D

DIODE SIL CARB 650V 10A TO220AC

STMicroelectronics

538 -
Datasheet ECOPACK®2 TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.45 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 130 µA @ 650 V 670pF @ 0V, 1MHz - - Through Hole TO-220AC -40°C ~ 175°C
STPSC10065DLF STMicroelectronics

STPSC10065DLF

DIODE SIL CARB 650V 10A PWRFLAT

STMicroelectronics

2,074 -
Datasheet ECOPACK®2 8-PowerVDFN Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.45 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 130 µA @ 650 V 670pF @ 0V, 1MHz - - Surface Mount PowerFlat™ (8x8) HV -40°C ~ 175°C
VS-E5PH7506L-N3 Vishay General Semiconductor - Diodes Division

VS-E5PH7506L-N3

DIODE GEN PURP 600V 75A TO247AD

Vishay General Semiconductor - Diodes Division

303 -
Datasheet FRED Pt® TO-247-2 Tube Active Standard 600 V 75A 1.7 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 57 ns 25 µA @ 600 V - - - Through Hole TO-247AD -55°C ~ 175°C
VS-65EPS12L-M3 Vishay General Semiconductor - Diodes Division

VS-65EPS12L-M3

DIODE GEN PURP 1.2KV 65A TO247AD

Vishay General Semiconductor - Diodes Division

578 -
Datasheet - TO-247-2 Tube Active Standard 1200 V 65A 1.12 V @ 65 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1200 V - - - Through Hole TO-247AD -40°C ~ 150°C
UJ3D06520TS Qorvo

UJ3D06520TS

DIODE SIL CARB 650V 20A TO220-2

Qorvo

6,004 -
Datasheet Gen-III TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 650 V 654pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
STPSC5H12D STMicroelectronics

STPSC5H12D

DIODE SIL CARB 1.2KV 5A TO220AC

STMicroelectronics

2,772 -
Datasheet ECOPACK®2 TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 5A 1.5 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 1200 V 450pF @ 0V, 1MHz - - Through Hole TO-220AC -40°C ~ 175°C
STTH31AC06SWL STMicroelectronics

STTH31AC06SWL

DIODE GEN PURP 600V 30A TO247

STMicroelectronics

187 -
Datasheet - TO-247-3 Tube Active Standard 600 V 30A 2 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 65 ns 10 µA @ 600 V - - - Through Hole TO-247 -40°C ~ 175°C
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WINSUN SOURCING SUPPORT

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FREQUENTLY ASKED QUESTIONS

Single Diodes FAQ

Common questions about selecting, comparing and sourcing Single Diodes components through Winsun (HK) Electronics.

What should I check when selecting Single Diodes components?

Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.

Can Winsun help source specific Single Diodes part numbers?

Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.

Do you support shortage, obsolete or hard-to-find Single Diodes parts?

Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

How do I request a quote for Single Diodes components?

Submit an RFQ with the part number, manufacturer, quantity and target delivery requirement. Our sales team will review your request and follow up with current sourcing information.