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Single Diodes

Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

For BOM, shortage or hard-to-find requirements, send your part number and quantity to Winsun (HK) Electronics for availability, lead-time and quotation support.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
RURG3060-F085 onsemi

RURG3060-F085

DIODE GEN PURP 600V 30A TO247-2

onsemi

194 -
Datasheet - TO-247-2 Tube Active Avalanche 600 V 30A 1.5 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 250 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-247-2 -55°C ~ 175°C
STPSC10065DY STMicroelectronics

STPSC10065DY

DIODE SIL CARB 650V 10A TO220AC

STMicroelectronics

1,016 -
Datasheet ECOPACK®2 TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.45 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 130 µA @ 650 V 670pF @ 0V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC -40°C ~ 175°C
STPSC10H065G-TR STMicroelectronics

STPSC10H065G-TR

DIODE SIL CARBIDE 650V 10A D2PAK

STMicroelectronics

516 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.75 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 480pF @ 0V, 1MHz - - Surface Mount D2PAK -40°C ~ 175°C
STPSC10065G2-TR STMicroelectronics

STPSC10065G2-TR

DIODE SIL CARBIDE 650V 10A D2PAK

STMicroelectronics

1,206 -
Datasheet ECOPACK®2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.45 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 130 µA @ 650 V 670pF @ 0V, 1MHz - - Surface Mount D2PAK -40°C ~ 175°C
DMA30E1800HA IXYS

DMA30E1800HA

DIODE GEN PURP 1.8KV 30A TO247

IXYS

300 -
Datasheet - TO-247-2 Tube Active Standard 1800 V 30A 1.25 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 1800 V 10pF @ 400V, 1MHz - - Through Hole TO-247 -55°C ~ 175°C
MSC010SDA120K Microchip Technology

MSC010SDA120K

DIODE SIL CARB 1.2KV 10A TO220

Microchip Technology

178 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.5 V @ 10 A No Recovery Time > 500mA (Io) 0 ns - - - - Through Hole TO-220-2 -
DSI45-12A IXYS

DSI45-12A

DIODE GEN PURP 1.2KV 45A TO247AD

IXYS

635 -
Datasheet - TO-247-2 Tube Active Standard 1200 V 45A 1.28 V @ 45 A Standard Recovery >500ns, > 200mA (Io) - 20 µA @ 1200 V 18pF @ 400V, 1MHz - - Through Hole TO-247AD -40°C ~ 175°C
C6D08065E Wolfspeed, Inc.

C6D08065E

DIODE SIL CARB 650V 29A TO252-2

Wolfspeed, Inc.

767 -
Datasheet Z-Rec® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active SiC (Silicon Carbide) Schottky 650 V 29A 1.5 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 518pF @ 0V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
C6D08065G Wolfspeed, Inc.

C6D08065G

DIODE SIL CARB 650V 30A TO263-2

Wolfspeed, Inc.

653 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active SiC (Silicon Carbide) Schottky 650 V 30A 1.4 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 518pF @ 0V, 1MHz - - Surface Mount TO-263-2 -55°C ~ 175°C
IDH08G120C5XKSA1 Infineon Technologies

IDH08G120C5XKSA1

DIODE SIL CARB 1.2KV TO220-1

Infineon Technologies

285 -
Datasheet CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 22.8A 1.95 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 1200 V 365pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
SIC0860P-BP Micro Commercial Co

SIC0860P-BP

DIODE SIL CARB 650V 8A TO220AC

Micro Commercial Co

4,804 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.6 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 36 µA @ 650 V 30pF @ 400V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
STPSC10H065G2-TR STMicroelectronics

STPSC10H065G2-TR

DIODE SIL CARBIDE 650V 10A D2PAK

STMicroelectronics

1,278 -
Datasheet ECOPACK®2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.75 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 480pF @ 0V, 1MHz - - Surface Mount D2PAK -40°C ~ 175°C
CD5819 Microchip Technology

CD5819

DIODE SCHOTTKY 40V 1A DIE

Microchip Technology

392 -
Datasheet - Die Bulk Active Schottky 40 V 1A 600 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 40 V - Military MIL-PRF-19500/586 Surface Mount Die -55°C ~ 125°C
VS-60APH03-N3 Vishay General Semiconductor - Diodes Division

VS-60APH03-N3

DIODE GEN PURP 300V 60A TO247AC

Vishay General Semiconductor - Diodes Division

220 -
Datasheet FRED Pt® TO-247-3 Tube Active Standard 300 V 60A 1.45 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 42 ns 10 µA @ 300 V - - - Through Hole TO-247AC -55°C ~ 175°C
VS-75EPU12L-N3 Vishay General Semiconductor - Diodes Division

VS-75EPU12L-N3

DIODE GEN PURP 1.2KV 75A TO247AD

Vishay General Semiconductor - Diodes Division

813 -
Datasheet FRED Pt® TO-247-2 Tube Active Standard 1200 V 75A 2.55 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 265 ns 420 µA @ 1200 V - - - Through Hole TO-247AD -55°C ~ 175°C
DNA30EM2200PZ-TUB IXYS

DNA30EM2200PZ-TUB

DIODE GEN PURP 2.2KV 30A TO263HV

IXYS

441 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Standard 2200 V 30A 1.26 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 2200 V 7pF @ 700V, 1MHz - - Surface Mount TO-263HV -55°C ~ 175°C
STTH60RQ06W STMicroelectronics

STTH60RQ06W

DIODE GEN PURP 600V 60A DO247

STMicroelectronics

313 -
Datasheet - DO-247-2 (Straight Leads) Tube Active Standard 600 V 60A - Fast Recovery =< 500ns, > 200mA (Io) 65 ns 80 µA @ 600 V - - - Through Hole DO-247 175°C (Max)
SCS206AJTLL Rohm Semiconductor

SCS206AJTLL

DIODE SIL CARB 650V 6A TO263AB

Rohm Semiconductor

2,842 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.55 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 600 V 219pF @ 1V, 1MHz - - Surface Mount TO-263AB 175°C (Max)
SCS306AJTLL Rohm Semiconductor

SCS306AJTLL

DIODE SIL CARBIDE 650V 6A LPTL

Rohm Semiconductor

2,023 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.5 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V 300pF @ 1V, 1MHz - - Surface Mount LPTL 175°C (Max)
GD10MPS12H GeneSiC Semiconductor

GD10MPS12H

DIODE SIL CARB 1.2KV 10A TO247-2

GeneSiC Semiconductor

540 -
Datasheet SiC Schottky MPS™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A - No Recovery Time > 500mA (Io) 0 ns - - - - Through Hole TO-247-2 175°C
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FREQUENTLY ASKED QUESTIONS

Single Diodes FAQ

Common questions about selecting, comparing and sourcing Single Diodes components through Winsun (HK) Electronics.

What should I check when selecting Single Diodes components?

Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.

Can Winsun help source specific Single Diodes part numbers?

Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.

Do you support shortage, obsolete or hard-to-find Single Diodes parts?

Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

How do I request a quote for Single Diodes components?

Submit an RFQ with the part number, manufacturer, quantity and target delivery requirement. Our sales team will review your request and follow up with current sourcing information.