Single Diodes

Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
C6D10065G DIODE SIL CARB 650V 36A TO263-2 Wolfspeed, Inc.	253	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	36A	1.4 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	611pF @ 0V, 1MHz	-	-	Surface Mount	TO-263-2	-55°C ~ 175°C
FFSP2065B-F085 DIODE SIL CARB 650V 20A TO220-2 onsemi	660	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	866pF @ 1V, 100kHz	Automotive	AEC-Q101	Through Hole	TO-220-2	-55°C ~ 175°C
DSA1-18D DIODE AVALANCHE 1.8KV 2.3A IXYS	262	-	RFQ	Datasheet	-	Radial	Bulk	Active	Avalanche	1800 V	2.3A	1.34 V @ 7 A	Standard Recovery >500ns, > 200mA (Io)	-	700 µA @ 1800 V	-	-	-	Through Hole	-	-40°C ~ 150°C
FFSD2065B DIODE SIL CARB 650V 23.4A DPAK onsemi	1,771	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	23.4A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	866pF @ 1V, 100kHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
IDK10G120C5XTMA1 DIODE SIC 1.2KV 31.9A TO263-1 Infineon Technologies	835	-	RFQ	Datasheet	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	31.9A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	-	18 µA @ 1200 V	525pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO263-2-1	-55°C ~ 175°C
DSEI30-12A DIODE GEN PURP 1.2KV 26A TO247AD IXYS	205	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	26A	2.55 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	750 µA @ 1200 V	-	-	-	Through Hole	TO-247AD	-40°C ~ 150°C
IDW12G65C5XKSA1 DIODE SIL CARB 650V 12A TO247-3 Infineon Technologies	268	-	RFQ	Datasheet	CoolSiC™+	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	190 µA @ 650 V	360pF @ 1V, 1MHz	-	-	Through Hole	PG-TO247-3	-55°C ~ 175°C
IDH12G65C5XKSA2 DIODE SIL CARB 650V 12A TO220-1 Infineon Technologies	850	-	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	190 µA @ 650 V	360pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
STPSC15H12D DIODE SIL CARB 1.2KV 15A TO220AC STMicroelectronics	2,768	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	15A	1.5 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 1200 V	1200pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-40°C ~ 175°C
1N5806E3 DIODE GEN PURP 150V 1A A AXIAL Microchip Technology	123	-	RFQ	Datasheet	-	Axial	Bulk	Active	Standard	150 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 150 V	25pF @ 10V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 175°C
APT60D100BG DIODE GEN PURP 1KV 60A TO247 Microchip Technology	839	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1000 V	60A	2.5 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	280 ns	250 µA @ 1000 V	-	-	-	Through Hole	TO-247 [B]	-55°C ~ 175°C
STBR6012W DIODE GEN PURP 1.2KV 60A DO247 STMicroelectronics	516	-	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	1200 V	60A	1.3 V @ 60 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1200 V	-	-	-	Through Hole	DO-247	175°C (Max)
DHG30I1200HA DIODE GEN PURP 1.2KV 30A TO247 IXYS	300	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	30A	2.26 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	50 µA @ 1200 V	-	-	-	Through Hole	TO-247	-55°C ~ 150°C
C3D10065I DIODE SIL CARB 650V 19A TO220-2 Wolfspeed, Inc.	1,325	-	RFQ	Datasheet	Z-Rec®	TO-220-2 Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	19A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	480pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2 Isolated Tab	-55°C ~ 175°C
STTH6012WL DIODE GP 1.2KV 60A DO247 LL STMicroelectronics	946	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	60A	2.25 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	125 ns	30 µA @ 1200 V	-	-	-	Through Hole	DO-247 LL	175°C
STBR6012WY DIODE GEN PURP 1.2KV 60A DO247 STMicroelectronics	112	-	RFQ	Datasheet	ECOPACK®2	DO-247-2 (Straight Leads)	Tube	Active	Standard	1200 V	60A	1.3 V @ 60 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1200 V	-	Automotive	AEC-Q101	Through Hole	DO-247	-40°C ~ 175°C
STBR6008WY DIODE GEN PURP 800V 60A DO247 STMicroelectronics	510	-	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	800 V	60A	1.1 V @ 60 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 800 V	-	Automotive	AEC-Q101	Through Hole	DO-247	-40°C ~ 175°C
GD30MPS06H DIODE SIL CARB 650V 49A TO247-2 GeneSiC Semiconductor	614	-	RFQ	Datasheet	SiC Schottky MPS™	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	49A	-	No Recovery Time > 500mA (Io)	-	-	735pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
VS-HFA25PB60-N3 DIODE GP 600V 25A TO247AC Vishay General Semiconductor - Diodes Division	385	-	RFQ	Datasheet	HEXFRED®	TO-247-2	Tube	Active	Standard	600 V	25A	1.7 V @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	20 µA @ 600 V	-	-	-	Through Hole	TO-247AC Modified	-55°C ~ 150°C
IDD10SG60CXTMA2 DIODE SIL CARB 600V 10A TO252-3 Infineon Technologies	217	-	RFQ	Datasheet	CoolSiC™+	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	600 V	10A	2.1 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 600 V	290pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO252-3	-55°C ~ 175°C

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Single Diodes FAQ

Common questions about selecting, comparing and sourcing Single Diodes components through Winsun (HK) Electronics.

What should I check when selecting Single Diodes components?

Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.

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Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.

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Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

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