Single Diodes

Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

For BOM, shortage or hard-to-find requirements, send your part number and quantity to Winsun (HK) Electronics for availability, lead-time and quotation support.

Compare Part Numbers Review available models and manufacturers

Datasheets & Specifications Access technical references quickly

RFQ & BOM Support Send quantities for sourcing and quotation

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
STPSC20065D DIODE SIL CARB 650V 20A TO220AC STMicroelectronics	975	-	RFQ	Datasheet	ECOPACK®2	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.45 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 650 V	1250pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-40°C ~ 175°C
IDH16G65C5XKSA2 DIODE SIL CARB 650V 16A TO220-1 Infineon Technologies	1,984	-	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	16A	1.7 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	470pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
VS-1N3890R DIODE GEN PURP 100V 12A DO203AA Vishay General Semiconductor - Diodes Division	181	-	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	100 V	12A	1.4 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	25 µA @ 100 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 150°C
1N5553 DIODE GEN PURP 800V 3A AXIAL Microchip Technology	251	-	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	800 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 800 V	-	-	-	Through Hole	B, Axial	-65°C ~ 175°C
FFSD10120A DIODE SIL CARBIDE 1.2KV TO252AA onsemi	1,706	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	-	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	612pF @ 1V, 100kHz	-	-	Surface Mount	TO-252AA	-
1N5551US DIODE GEN PURP 400V 3A D-5B Microchip Technology	165	-	RFQ	Datasheet	-	SQ-MELF, E	Bulk	Active	Standard	400 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 400 V	-	-	-	Surface Mount	D-5B	-65°C ~ 175°C
IDH12SG60CXKSA2 DIODE SIL CARB 600V 12A TO220-1 Infineon Technologies	396	-	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	600 V	12A	2.1 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 600 V	310pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
VS-3C20ET07T-M3 650 V POWER SIC GEN 3 MERGED PIN Vishay General Semiconductor - Diodes Division	788	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	845pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
STPSC20065DI DIODE SIC 650V 20A TO220AC INS STMicroelectronics	599	-	RFQ	Datasheet	ECOPACK®2	TO-220-2 Insulated, TO-220AC	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.45 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 650 V	1250pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC ins	-40°C ~ 175°C
MSC030SDA070B DIODE SIL CARBIDE 700V 60A TO247 Microchip Technology	118	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	700 V	60A	1.8 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 700 V	1200pF @ 1V, 1MHz	-	-	Through Hole	TO-247	-55°C ~ 175°C
DSP45-18A DIODE GEN PURP 1.8KV 45A TO247 IXYS	5,823	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	1800 V	45A	1.26 V @ 45 A	Standard Recovery >500ns, > 200mA (Io)	-	40 µA @ 1800 V	18pF @ 400V, 1MHz	-	-	Through Hole	TO-247 (IXTH)	-40°C ~ 175°C
FFSP3065B DIODE SIL CARB 650V 30A TO220-2 onsemi	1,216	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	30A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	1280pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
VS-40EPF02-M3 DIODE GP 200V 40A TO247AC Vishay General Semiconductor - Diodes Division	466	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	200 V	40A	1.25 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	100 µA @ 200 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
IDH16G120C5XKSA1 DIODE SIL CARB 1.2KV 16A TO220-1 Infineon Technologies	243	-	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	16A	1.95 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	730pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
C3D16065A DIODE SIL CARB 650V 39A TO220-2 Wolfspeed, Inc.	1,048	-	RFQ	Datasheet	Z-Rec®	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	39A	1.8 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	95 µA @ 650 V	878pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
VS-80APS08-M3 DIODE GEN PURP 800V 80A TO247AC Vishay General Semiconductor - Diodes Division	1,237	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	800 V	80A	1.17 V @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 800 V	-	-	-	Through Hole	TO-247AC	-40°C ~ 150°C
DSEI60-10A DIODE GEN PURP 1KV 60A TO247AD IXYS	287	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1000 V	60A	2.3 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	3 mA @ 1000 V	-	-	-	Through Hole	TO-247AD	-40°C ~ 150°C
S4D20120H DIODE SIL CARB 1.2KV 20A TO247AC SMC Diode Solutions	300	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 1200 V	721pF @ 0V, 1MHz	-	-	Through Hole	TO-247AC	-55°C ~ 175°C
IDK16G120C5XTMA1 DIODE SIL CARB 1.2KV 40A TO263-1 Infineon Technologies	437	-	RFQ	Datasheet	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	40A	1.95 V @ 16 A	No Recovery Time > 500mA (Io)	-	80 µA @ 1200 V	730pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO263-2-1	-55°C ~ 175°C
SCS215AJTLL DIODE SIL CARB 650V 15A TO263AB Rohm Semiconductor	3,996	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	15A	1.55 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 600 V	550pF @ 1V, 1MHz	-	-	Surface Mount	TO-263AB	175°C (Max)

WINSUN SOURCING SUPPORT

Need Single Diodes Sourcing Support?

Send the manufacturer, part number, quantity and target delivery requirement. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and hard-to-find or obsolete components.

Global component sourcing support BOM, shortage and EOL support

Send part number & quantity Request a Quote

Need sourcing assistance? Contact Sales

FREQUENTLY ASKED QUESTIONS

Single Diodes FAQ

Common questions about selecting, comparing and sourcing Single Diodes components through Winsun (HK) Electronics.

What should I check when selecting Single Diodes components?

Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.

Can Winsun help source specific Single Diodes part numbers?

Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.

Do you support shortage, obsolete or hard-to-find Single Diodes parts?

Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

How do I request a quote for Single Diodes components?

Submit an RFQ with the part number, manufacturer, quantity and target delivery requirement. Our sales team will review your request and follow up with current sourcing information.