Single Diodes

Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
CMR3U-10M TR13 PBFREE DIODE GEN PURP 1KV 3A SMC Central Semiconductor Corp	9,176	-	RFQ	Datasheet	-	DO-214AB, SMC	Tape & Reel (TR)	Active	Standard	1000 V	3A	2 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	5 µA @ 1000 V	-	-	-	Surface Mount	SMC	-65°C ~ 175°C
VS-8EWF06S-M3 DIODE GEN PURP 600V 8A DPAK Vishay General Semiconductor - Diodes Division	2,573	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Active	Standard	600 V	8A	1.2 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	100 µA @ 600 V	-	-	-	Surface Mount	TO-252AA (DPAK)	-40°C ~ 150°C
C3D04060A DIODE SIL CARB 600V 13.5A TO220 Wolfspeed, Inc.	5,109	-	RFQ	Datasheet	Z-Rec®	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	600 V	13.5A	1.8 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 600 V	251pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
APT75DQ60BG DIODE GP 600V 75A TO247 Microchip Technology	22,922	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	75A	2.5 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	31 ns	25 µA @ 600 V	-	-	-	Through Hole	TO-247 [B]	-55°C ~ 175°C
JANTXV1N4148UR-1 DIODE GEN PURP 75V 200MA DO213AA Microchip Technology	7,199	-	RFQ	Datasheet	-	DO-213AA	Bulk	Active	Standard	75 V	200mA	1.2 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	20 ns	25 nA @ 20 V	4pF @ 0V, 1MHz	Military	MIL-PRF-19500/116	Surface Mount	DO-213AA	-65°C ~ 175°C
C4D02120E-TR DIODE SIL CARB 1.2KV 10A TO252-2 Wolfspeed, Inc.	11,748	-	RFQ	Datasheet	Z-Rec®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.8 V @ 2 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	167pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2	-55°C ~ 175°C
C4D02120E DIODE SIL CARB 1.2KV 10A TO252-2 Wolfspeed, Inc.	10,786	-	RFQ	Datasheet	Z-Rec®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.8 V @ 2 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	167pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2	-55°C ~ 175°C
STPSC6H065B-TR DIODE SIL CARBIDE 650V 6A DPAK STMicroelectronics	5,633	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.75 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	300pF @ 0V, 1MHz	-	-	Surface Mount	DPAK	-40°C ~ 175°C
DSEI12-12A DIODE GEN PURP 1.2KV 11A TO220AC IXYS	3,847	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	1200 V	11A	2.6 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	70 ns	250 µA @ 1200 V	-	-	-	Through Hole	TO-220AC	-40°C ~ 150°C
STTH30L06G-TR DIODE GEN PURP 600V 30A D2PAK STMicroelectronics	3,910	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	600 V	30A	1.55 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	90 ns	25 µA @ 600 V	-	-	-	Surface Mount	D2PAK	175°C (Max)
STPSC2H12B2Y-TR DIODE SIL CARBIDE 1.2KV 5A DPAK STMicroelectronics	12,015	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.5 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	12 µA @ 1200 V	190pF @ 0V, 1MHz	-	-	Surface Mount	DPAK	-40°C ~ 175°C
GB02SLT12-214 DIODE SIL CARB 1.2KV 2A DO214AA GeneSiC Semiconductor	12,092	-	RFQ	Datasheet	SiC Schottky MPS™	DO-214AA, SMB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	2A	1.8 V @ 1 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	131pF @ 1V, 1MHz	-	-	Surface Mount	DO-214AA	-55°C ~ 175°C
DST2045AX DIODE SCHOTTKY 45V 20A P600 Littelfuse Inc.	19,025	-	RFQ	Datasheet	-	P600, Axial	Tape & Reel (TR)	Active	Schottky	45 V	20A	580 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.2 mA @ 45 V	-	-	-	Through Hole	P600	-55°C ~ 155°C
DSI30-12AS-TRL DIODE GEN PURP 1.2KV 30A TO263AA IXYS	8,015	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	1200 V	30A	1.29 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	40 µA @ 1200 V	10pF @ 400V, 1MHz	-	-	Surface Mount	TO-263AA	-40°C ~ 175°C
VS-E5TH3012-M3 DIODE GEN PURP 1.2KV 30A TO220AC Vishay General Semiconductor - Diodes Division	5,292	-	RFQ	Datasheet	FRED Pt®	TO-220-2	Tube	Active	Standard	1200 V	30A	2.5 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	58 ns	50 µA @ 1200 V	-	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
APT75DQ120BG DIODE GP 1.2KV 75A TO247 Microchip Technology	3,293	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	75A	3.1 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	325 ns	100 µA @ 1200 V	-	-	-	Through Hole	TO-247 [B]	-55°C ~ 175°C
VS-20ETS12FP-M3 DIODE GP 1.2KV 20A TO220-2FP Vishay General Semiconductor - Diodes Division	1,182	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	1200 V	20A	1.3 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	95 ns	100 µA @ 1200 V	-	-	-	Through Hole	TO-220-2 Full Pack	-40°C ~ 150°C
APT60D60BG DIODE GP 600V 60A TO247 Microchip Technology	1,014	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	60A	1.8 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	130 ns	250 µA @ 600 V	-	-	-	Through Hole	TO-247 [B]	-55°C ~ 175°C
VS-20ETF12-M3 DIODE GEN PURP 1.2KV 20A TO220AC Vishay General Semiconductor - Diodes Division	7,985	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	1200 V	20A	1.31 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	100 µA @ 1200 V	-	-	-	Through Hole	TO-220AC	-40°C ~ 150°C
C3D06060A DIODE SIL CARB 600V 19A TO220-2 Wolfspeed, Inc.	3,162	-	RFQ	Datasheet	Z-Rec®	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	600 V	19A	1.8 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 600 V	294pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C

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