Single Diodes

Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
VS-30EPH03-N3 DIODE GP 300V 30A TO247AC Vishay General Semiconductor - Diodes Division	973	-	RFQ	Datasheet	FRED Pt®	TO-247-2	Tube	Active	Standard	300 V	30A	1.25 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	38 ns	60 µA @ 300 V	-	-	-	Through Hole	TO-247AC Modified	-65°C ~ 175°C
GP3D005A170B DIODE SIL CARB 1.7KV 21A TO247-2 SemiQ	1,517	-	RFQ	Datasheet	Amp+™	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1700 V	21A	1.65 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1700 V	347pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
RHRG5060-F085 DIODE GEN PURP 600V 50A TO247-2 onsemi	294	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Avalanche	600 V	50A	2.1 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	250 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247-2	-55°C ~ 175°C
VS-65EPS16LHM3 DIODE GEN PURP 1.6KV 65A TO247AD Vishay General Semiconductor - Diodes Division	350	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1600 V	65A	1.17 V @ 65 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-40°C ~ 150°C
STPSC20065GY-TR DIODE SIL CARBIDE 650V 20A D2PAK STMicroelectronics	1,785	-	RFQ	Datasheet	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.45 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 600 V	1250pF @ 0V, 1MHz	Automotive	AEC-Q101	Surface Mount	D2PAK	-40°C ~ 175°C
1N6642US DIODE GEN PURP 75V 300MA D-5D Microchip Technology	1,066	-	RFQ	Datasheet	-	SQ-MELF, D	Bulk	Active	Standard	75 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	5 ns	500 nA @ 75 V	5pF @ 0V, 1MHz	-	-	Surface Mount	D-5D	-65°C ~ 175°C
1N6642U DIODE GEN PURP 75V 300MA D-5D Microsemi Corporation	445	-	RFQ	Datasheet	-	SQ-MELF, D	Bulk	Active	Standard	75 V	300mA	800 mV @ 10 mA	Fast Recovery =< 500ns, > 200mA (Io)	5 ns	500 µA @ 75 V	-	-	-	Surface Mount	D-5D	-65°C ~ 175°C
CDLL5819/TR DIODE SCHOTTKY 45V 1A DO213AA Microchip Technology	256	-	RFQ	Datasheet	-	DO-213AA	Tape & Reel (TR)	Active	Schottky	45 V	1A	490 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 45 V	70pF @ 5V, 1MHz	-	-	Surface Mount	DO-213AA	-65°C ~ 125°C
IDDD16G65C6XTMA1 DIODE SIL CARB 650V 43A HDSOP-10 Infineon Technologies	4,841	-	RFQ	Datasheet	CoolSiC™+	10-PowerSOP Module	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	43A	-	No Recovery Time > 500mA (Io)	0 ns	53 µA @ 420 V	783pF @ 1V, 1MHz	-	-	Surface Mount	PG-HDSOP-10-1	-55°C ~ 175°C
IDH16G65C6XKSA1 DIODE SIL CARB 650V 34A TO220-2 Infineon Technologies	3,011	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	34A	1.35 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	53 µA @ 420 V	783pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2	-55°C ~ 175°C
1N5418 DIODE GEN PURP 400V 3A B SQ-MELF Microchip Technology	384	-	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	400 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 400 V	-	-	-	Through Hole	B, Axial	-65°C ~ 175°C
1N5809 DIODE GEN PURP 100V 3A AXIAL Microchip Technology	210	-	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	100 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 100 V	60pF @ 10V, 1MHz	-	-	Through Hole	B, Axial	-65°C ~ 175°C
JANTX1N5711-1 DIODE SCHOTTKY 70V 33MA DO35 Microchip Technology	132	-	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Active	Schottky	70 V	33mA	410 mV @ 1 mA	Small Signal =< 200mA (Io), Any Speed	-	200 nA @ 50 V	2pF @ 0V, 1MHz	Military	MIL-PRF-19500/444	Through Hole	DO-204AH (DO-35)	-65°C ~ 150°C
VS-60EPS16-M3 DIODE GP 1.6KV 60A TO247AC Vishay General Semiconductor - Diodes Division	668	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1600 V	60A	1.15 V @ 60 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1600 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
1N5811US DIODE GEN PURP 150V 3A B SQ-MELF Microchip Technology	815	-	RFQ	Datasheet	-	SQ-MELF, B	Bulk	Active	Standard	150 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 50 V	60pF @ 10V, 1MHz	-	-	Surface Mount	B, SQ-MELF	-65°C ~ 175°C
DSEI60-02A DIODE GEN PURP 200V 69A TO247AD IXYS	137	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	200 V	69A	1.08 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	50 µA @ 200 V	-	-	-	Through Hole	TO-247AD	-40°C ~ 150°C
1N6638US DIODE GEN PURP 125V 300MA D-5D Microchip Technology	541	-	RFQ	Datasheet	-	SQ-MELF, D	Bulk	Active	Standard	125 V	300mA	1.1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	4.5 ns	500 nA @ 125 V	2.5pF @ 0V, 1MHz	-	-	Surface Mount	D-5D	-65°C ~ 175°C
C4D10120E DIODE SIL CARB 1.2KV 33A TO252-2 Wolfspeed, Inc.	5,722	-	RFQ	Datasheet	Z-Rec®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	33A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	250 µA @ 1200 V	754pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2	-55°C ~ 175°C
IDH20G65C6XKSA1 DIODE SIL CARB 650V 41A TO220-2 Infineon Technologies	1,342	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	41A	1.35 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	67 µA @ 420 V	970pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2	-55°C ~ 175°C
C4D08120A DIODE SIL CARB 1.2KV 24.5A TO220 Wolfspeed, Inc.	711	-	RFQ	Datasheet	Z-Rec®	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	24.5A	1.8 V @ 7.5 A	No Recovery Time > 500mA (Io)	0 ns	250 µA @ 1200 V	560pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C

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Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

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