Single Diodes
Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.
For BOM, shortage or hard-to-find requirements, send your part number and quantity to Winsun (HK) Electronics for availability, lead-time and quotation support.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
C4D10120E-TRDIODE SIL CARB 1.2KV 33A TO252-2 |
3,806 | - |
|
Datasheet | Z-Rec® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 33A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 1200 V | 754pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
DSDI60-18ADIODE GEN PURP 1.8KV 63A TO247AD |
2,767 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 1800 V | 63A | 4.1 V @ 70 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 2 mA @ 1800 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
|
IDWD30G120C5XKSA1DIODE SIL CARB 1.2KV 87A TO247-2 |
652 | - |
|
Datasheet | CoolSiC™+ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 87A | 1.65 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 248 µA @ 1200 V | 1980pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-2 | -55°C ~ 175°C |
|
UJ3D1725K2DIODE SIL CARB 1.7KV 25A TO247-2 |
4,349 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 25A | 1.7 V @ 25 A | No Recovery Time > 500mA (Io) | 0 ns | 360 µA @ 1700 V | 1500pF @ 1V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
IDWD40G120C5XKSA1DIODE SIL CARB 1.2KV 110A TO247 |
132 | - |
|
Datasheet | CoolSiC™+ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 110A | 1.65 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 332 µA @ 1200 V | 2592pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-2 | -55°C ~ 175°C |
|
FFSH5065B-F085DIODE SIL CARB 650V 50A TO247-2 |
331 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 50A | 1.7 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 2030pF @ 1V, 100kHz | Automotive | AEC-Q101 | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
NDSH25170ADIODE SIL CARB 1.7KV 25A TO247-2 |
849 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 25A | 1.75 V @ 25 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 1700 V | 2025pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GD25MPS17HDIODE SIL CARB 1.7KV 56A TO247-2 |
1,285 | - |
|
Datasheet | SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 56A | 1.8 V @ 25 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1700 V | 1083pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
C6D10170H10A 1700V SIC, SCHOTTKY DIODE |
395 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 40A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 18 µA @ 1700 V | 1227pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
JANTXV1N5819UR-1DIODE SCHOTTKY 45V 1A DO213AB |
124 | - |
|
Datasheet | - | DO-213AB, MELF (Glass) | Bag | Active | Schottky | 45 V | 1A | 490 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 45 V | 70pF @ 5V, 1MHz | Military | MIL-PRF-19500/586 | Surface Mount | DO-213AB (MELF, LL41) | -65°C ~ 125°C |
|
UJ3D1250K2DIODE SIL CARB 1.2KV 50A TO247-2 |
14,813 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 50A | 1.7 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 1200 V | 2340pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GC05MPS33JDIODE SIL CARB 3.3KV 5A TO263-7 |
1,114 | - |
|
Datasheet | SiC Schottky MPS™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | SiC (Silicon Carbide) Schottky | 3300 V | 5A | - | No Recovery Time > 500mA (Io) | 0 ns | - | - | - | - | Surface Mount | TO-263-7 | 175°C |
|
C4D40120HDIODE SIL CARB 1.2KV 128A TO247 |
764 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 128A | 1.8 V @ 40 A | No Recovery Time > 500mA (Io) | - | 300 µA @ 1200 V | 2809pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
DMA150E1600NADIODE GP 1.6KV 150A SOT227B |
187 | - |
|
Datasheet | - | SOT-227-4, miniBLOC | Tube | Active | Standard | 1600 V | 150A | 1.15 V @ 150 A | Standard Recovery >500ns, > 200mA (Io) | - | 200 µA @ 1600 V | 60pF @ 400V, 1MHz | - | - | Chassis Mount | SOT-227B | -40°C ~ 150°C |
|
1N6391DIODE SCHOTTKY 45V 25A DO203AA |
74 | - |
|
Datasheet | - | DO-203AA, DO-4, Stud | Bulk | Active | Schottky | 45 V | 25A | 500 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5 mA @ 45 V | 2000pF @ 5V, 1MHz | - | - | Stud Mount | DO-203AA (DO-4) | -55°C ~ 175°C |
|
JANTX1N5822USDIODE SCHOTTKY 40V 3A B SQ-MELF |
169 | - |
|
Datasheet | - | SQ-MELF, B | Bulk | Active | Schottky | 40 V | 3A | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | Military | MIL-PRF-19500/620 | Surface Mount | B, SQ-MELF | -65°C ~ 150°C |
|
S300YDIODE GEN PURP 1.6KV 300A DO9 |
54 | - |
|
Datasheet | - | DO-205AB, DO-9, Stud | Bulk | Active | Standard | 1600 V | 300A | 1.2 V @ 300 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1600 V | - | - | - | Chassis, Stud Mount | DO-9 | -60°C ~ 180°C |
|
UGE1112AY4DIODE GEN PURP 8KV 4.2A UGE |
36 | - |
|
Datasheet | - | UGE | Box | Active | Standard | 8000 V | 4.2A | 6.25 V @ 7 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 mA @ 8000 V | - | - | - | Chassis Mount | UGE | - |
|
1N5822USDIODE SCHOTTKY 40V 3A B SQ-MELF |
207 | - |
|
Datasheet | - | SQ-MELF, B | Bulk | Active | Schottky | 40 V | 3A | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | - | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 125°C |
|
MEO550-02DADIODE GEN PURP 200V 582A Y4-M6 |
143 | - |
|
Datasheet | - | Y4-M6 | Bulk | Active | Standard | 200 V | 582A | 1.25 V @ 520 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 5 mA @ 200 V | - | - | - | Chassis Mount | Y4-M6 | -40°C ~ 150°C |
Single Diodes FAQ
Common questions about selecting, comparing and sourcing Single Diodes components through Winsun (HK) Electronics.
What should I check when selecting Single Diodes components?
Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.
Can Winsun help source specific Single Diodes part numbers?
Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.
Do you support shortage, obsolete or hard-to-find Single Diodes parts?
Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.
How do I request a quote for Single Diodes components?
Submit an RFQ with the part number, manufacturer, quantity and target delivery requirement. Our sales team will review your request and follow up with current sourcing information.