Single Diodes
Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.
For BOM, shortage or hard-to-find requirements, send your part number and quantity to Winsun (HK) Electronics for availability, lead-time and quotation support.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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C3D06060FDIODE SIC 600V 11.5A TO220-F2 |
1,323 | - |
|
Datasheet | Z-Rec® | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 600 V | 11.5A | 1.8 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 600 V | 294pF @ 0V, 1MHz | - | - | Through Hole | TO-220-F2 | -55°C ~ 175°C |
|
GD10MPS12EDIODE SIL CARB 1.2KV 29A TO252-2 |
9,841 | - |
|
Datasheet | SiC Schottky MPS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 29A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 1200 V | 367pF @ 1V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
VS-20ETF12S-M3DIODE GEN PURP 1.2KV 20A TO263AB |
9,217 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | Standard | 1200 V | 20A | 1.31 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 100 µA @ 1200 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |
|
IDM05G120C5XTMA1DIODE SIL CARB 1.2KV 5A TO252-2 |
1,779 | - |
|
Datasheet | CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 33 µA @ 1200 V | 301pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO252-2 | -55°C ~ 175°C |
|
VS-8EWF12STR-M3DIODE GEN PURP 1.2KV 8A D-PAK |
5,847 | - |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | Standard | 1200 V | 8A | 1.3 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 270 ns | 100 µA @ 1200 V | - | - | - | Surface Mount | TO-252AA (DPAK) | -40°C ~ 150°C |
|
VS-8EWF06STR-M3DIODE GEN PURP 600V 8A D-PAK |
1,511 | - |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | Standard | 600 V | 8A | 1.2 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 100 µA @ 600 V | - | - | - | Surface Mount | TO-252AA (DPAK) | -40°C ~ 150°C |
|
VS-8EWF12S-M3DIODE GEN PURP 1.2KV 8A TO252 |
1,812 | - |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | Standard | 1200 V | 8A | 1.3 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 270 ns | 100 µA @ 1200 V | - | - | - | Surface Mount | TO-252AA (DPAK) | -40°C ~ 150°C |
|
APT60D120BGDIODE GP 1.2KV 60A TO247 |
955 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 1200 V | 60A | 2.5 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 250 µA @ 1200 V | - | - | - | Through Hole | TO-247 [B] | -55°C ~ 175°C |
|
APT60S20BGDIODE SCHOTTKY 200V 75A TO247 |
538 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | Schottky | 200 V | 75A | 900 mV @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 1 mA @ 200 V | - | - | - | Through Hole | TO-247 [B] | -55°C ~ 150°C |
|
GD10MPS12ADIODE SIL CARB 1.2KV 25A TO220-2 |
3,529 | - |
|
Datasheet | SiC Schottky MPS™ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 25A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 1200 V | 367pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
STPSC10H065GY-TRDIODE SIL CARBIDE 650V 10A D2PAK |
1,273 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.75 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 480pF @ 0V, 1MHz | Automotive | AEC-Q101 | Surface Mount | D2PAK | -40°C ~ 175°C |
|
VS-20ETF06FP-M3DIODE GP 600V 20A TO220-2FP |
1,061 | - |
|
Datasheet | - | TO-220-2 Full Pack | Tube | Active | Standard | 600 V | 20A | 1.67 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 160 ns | 100 µA @ 600 V | - | - | - | Through Hole | TO-220-2 Full Pack | -40°C ~ 150°C |
|
VS-EPU6006LHN3DIODE GEN PURP 600V 60A TO247AD |
895 | - |
|
Datasheet | FRED Pt® | TO-247-2 | Tube | Active | Standard | 600 V | 60A | 1.5 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 110 ns | 30 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AD | -55°C ~ 175°C |
|
DSI45-16ADIODE GEN PURP 1.6KV 45A TO247AD |
978 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 1600 V | 45A | 1.28 V @ 45 A | Standard Recovery >500ns, > 200mA (Io) | - | 20 µA @ 1600 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 175°C |
|
1N5712-1DIODE SCHOTTKY 20V 75MA DO35 |
1,793 | - |
|
Datasheet | - | DO-204AH, DO-35, Axial | Bulk | Active | Schottky | 20 V | 75mA | 1 V @ 35 mA | Small Signal =< 200mA (Io), Any Speed | - | 150 nA @ 16 V | 2pF @ 0V, 1MHz | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 150°C |
|
IDH05G120C5XKSA1DIODE SIL CARB 1.2KV 5A TO220-1 |
899 | - |
|
Datasheet | CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 33 µA @ 1200 V | 301pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
|
VS-90APS12L-M3DIODE GEN PURP 1.2KV 90A TO247AD |
1,295 | - |
|
Datasheet | - | TO-247-3 | Tube | Active | Standard | 1200 V | 90A | 1.2 V @ 90 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1200 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
|
1N5615DIODE GEN PURP 200V 1A AXIAL |
270 | - |
|
Datasheet | - | A, Axial | Bulk | Active | Standard | 200 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 200 V | 45pF @ 12V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
STPSC10H065B-TRDIODE SIL CARBIDE 650V 10A DPAK |
12,231 | - |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.75 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 480pF @ 0V, 1MHz | - | - | Surface Mount | DPAK | -40°C ~ 175°C |
|
1N5417DIODE GEN PURP 200V 3A B AXIAL |
1,183 | - |
|
Datasheet | - | Axial | Bulk | Active | Standard | 200 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | - | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
Single Diodes FAQ
Common questions about selecting, comparing and sourcing Single Diodes components through Winsun (HK) Electronics.
What should I check when selecting Single Diodes components?
Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.
Can Winsun help source specific Single Diodes part numbers?
Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.
Do you support shortage, obsolete or hard-to-find Single Diodes parts?
Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.
How do I request a quote for Single Diodes components?
Submit an RFQ with the part number, manufacturer, quantity and target delivery requirement. Our sales team will review your request and follow up with current sourcing information.