Single Diodes

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
RB208RSM15STL1 150V 15A, TO-277A, ULTRA LOW SBD Rohm Semiconductor	4,000	-	RFQ	Datasheet	-	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Schottky	150 V	15A	880 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	8.3 µA @ 150 V	-	-	-	Surface Mount	TO-277A	175°C
NRVTS30120MFST3G DIODE SCHOTTKY 120V 30A 5DFN onsemi	4,304	-	RFQ	Datasheet	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Active	Schottky	120 V	30A	950 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 120 V	1470pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	5-DFN (5x6) (8-SOFL)	-55°C ~ 175°C
DSC08C065D1-13 SILICON CARBIDE RECTIFIER TO252 Diodes Incorporated	2,495	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 650 V	278pF @ 100mV, 1MHz	-	-	Surface Mount	TO-252 (Type WX)	-55°C ~ 175°C
FFSP0665B DIODE SIL CARB 650V 8A TO220-2 onsemi	483	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	259pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
DST2060DJF DIODE SCHOTTKY 60V 20A 8DFN Littelfuse Inc.	14,843	-	RFQ	Datasheet	-	8-PowerVDFN	Tape & Reel (TR)	Active	Schottky	60 V	20A	750 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 60 V	-	-	-	Surface Mount	8-PDFN (5x6)	-55°C ~ 150°C
PSDP3060L1_T0_00001 TO-220AC, FAST Panjit International Inc.	3,935	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	600 V	30A	1.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	115 ns	250 µA @ 600 V	-	-	-	Through Hole	TO-220AC	-55°C ~ 150°C
VS-6EWH06FNTRHM3 DIODE GEN PURP 600V 6A D-PAK Vishay General Semiconductor - Diodes Division	2,000	-	RFQ	Datasheet	FRED Pt®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	Standard	600 V	6A	2.1 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	50 µA @ 600 V	-	Automotive	AEC-Q101	Surface Mount	TO-252AA (DPAK)	-65°C ~ 175°C
YQ12RSM10SDTFTL1 TRENCH MOS STRUCTURE, 100V, 12A Rohm Semiconductor	4,000	-	RFQ	Datasheet	-	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Schottky	100 V	12A	670 mV @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	90 µA @ 100 V	-	Automotive	AEC-Q101	Surface Mount	TO-277A	175°C
TRS4E65H,S1Q G3 SIC-SBD 650V 4A TO-220-2L Toshiba Semiconductor and Storage	341	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.35 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	55 µA @ 650 V	263pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2L	175°C
SE30DT12HM3/I DIODE GEN PURP 1.2KV 30A SMPD Vishay General Semiconductor - Diodes Division	1,243	-	RFQ	Datasheet	eSMP®	TO-263-3, D2PAK (2 Leads + Tab), Variant	Tape & Reel (TR)	Active	Standard	1200 V	30A	1.29 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	3.4 µs	10 µA @ 1200 V	132pF @ 4V, 1MHz	Automotive	AEC-Q101	Surface Mount	SMPD	-55°C ~ 175°C
SDS065J004D3-ISARH DIODE 650V-4A TO220-2L Luminus Devices Inc.	150	-	RFQ	Datasheet	Sanan TO252	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	14A	1.5 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	12 µA @ 650 V	213pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2L	-55°C ~ 175°C
UF1008F_T0_00001 ITO-220AC, ULTRA Panjit International Inc.	1,738	-	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	Standard	800 V	10A	1.7 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	1 µA @ 800 V	50pF @ 4V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 150°C
SIT08C065 DIODE SIL CARB 650V 8A TO220AC Diotec Semiconductor	1,000	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 µA @ 650 V	-	-	-	Through Hole	TO-220AC	-50°C ~ 175°C
YQ20NL10SDTL TRENCH MOS STRUCTURE, 100V, 20A Rohm Semiconductor	988	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Schottky	100 V	20A	960 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	70 µA @ 100 V	-	-	-	Surface Mount	TO-263L	150°C
P2500X DIODE AVALANCHE 1800V 25A P600 Diotec Semiconductor	940	-	RFQ	Datasheet	-	P600, Axial	Cut Tape (CT)	Active	Avalanche	1800 V	25A	1.1 V @ 25 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 1800 V	-	-	-	Through Hole	P-600	-50°C ~ 175°C
VS-30ETH06STRR-M3 DIODE GEN PURP 600V 30A TO263AB Vishay General Semiconductor - Diodes Division	4,542	-	RFQ	Datasheet	FRED Pt®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	600 V	30A	2.6 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	50 µA @ 600 V	-	-	-	Surface Mount	TO-263AB (D2PAK)	-65°C ~ 175°C
YQ15RSM10SDTFTL1 TRENCH MOS STRUCTURE, 100V, 15A Rohm Semiconductor	3,328	-	RFQ	Datasheet	-	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Schottky	100 V	15A	680 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	-	Automotive	AEC-Q101	Surface Mount	TO-277A	175°C
FFSH1065B-F155 650V 10A SIC SBD GEN 1.5 onsemi	153	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	11.5A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	421pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
VS-20ATS12HM3 DIODE GEN PURP 1.2KV 20A TO220-3 Vishay General Semiconductor - Diodes Division	975	-	RFQ	Datasheet	-	TO-220-3	Tube	Active	Standard	1200 V	20A	1.1 V @ 20 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1200 V	-	Automotive	AEC-Q101	Through Hole	TO-220-3	-40°C ~ 150°C
SDS120J002C3-ISATH DIODE 1200V-2A TO220-2L Luminus Devices Inc.	169	-	RFQ	Datasheet	Sanan TO220	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	11A	1.5 V @ 2 A	No Recovery Time > 500mA (Io)	0 ns	8 µA @ 1200 V	165pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C

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