Single Diodes

Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
VS-8EWS16S-M3 DIODE GEN PURP 1.6KV 8A TO252 Vishay General Semiconductor - Diodes Division	2,906	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Active	Standard	1600 V	8A	1.1 V @ 8 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 1600 V	-	-	-	Surface Mount	TO-252AA (DPAK)	-40°C ~ 150°C
PCDD0465G1_L2_00001 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,712	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	146pF @ 1V, 1MHz	-	-	Surface Mount	TO-252AA	-55°C ~ 175°C
DSC10A065D1-13 SILICON CARBIDE RECTIFIER TO252 Diodes Incorporated	1,956	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.5 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	250 µA @ 650 V	434pF @ 100mV, 1MHz	-	-	Surface Mount	TO-252 (Type WX)	-55°C ~ 175°C
RHRP3060G DIODE GEN PURP 600V 30A TO220AC Diotec Semiconductor	590	-	RFQ	Datasheet	-	TO-220-2	Bulk	Active	Standard	600 V	30A	1.7 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	40 ns	5 µA @ 600 V	-	-	-	Through Hole	TO-220AC	-50°C ~ 175°C
TSCDT06065G1 DIODE SCHOTTKY 650V 6A TO220AC Taiwan Semiconductor Corporation	966	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	Schottky	650 V	6A	1.45 V @ 6 A	No Recovery Time > 500mA (Io)	-	20 µA @ 650 V	30.5pF @ 400V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
VS-20ETF06THM3 DIODE GEN PURP 600V 20A TO220AC Vishay General Semiconductor - Diodes Division	730	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	600 V	20A	1.3 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	160 ns	100 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-220AC	-40°C ~ 150°C
TSCDF06065G1 DIODE SCHOTTKY 650V 6A ITO220AC Taiwan Semiconductor Corporation	946	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Schottky	650 V	6A	1.45 V @ 6 A	No Recovery Time > 500mA (Io)	-	20 µA @ 650 V	30.5pF @ 400V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 175°C
RBQ16NL45BFHHTL 45V, 16A, TO-263L, LOW IR SBD FO Rohm Semiconductor	1,000	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Schottky	45 V	16A	610 mV @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	-	80 µA @ 45 V	-	Automotive	AEC-Q101	Surface Mount	TO-263L	175°C
IDW30E60FKSA1 DIODE GEN PURP 600V 60A TO247-3 Infineon Technologies	179	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	600 V	60A	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	143 ns	40 µA @ 600 V	-	-	-	Through Hole	PG-TO247-3	-40°C ~ 175°C
VS-20ETS16-M3 DIODE GEN PURP 1.6KV 20A TO220-3 Vishay General Semiconductor - Diodes Division	7,750	-	RFQ	Datasheet	-	TO-220-3	Tube	Active	Standard	1600 V	20A	1.1 V @ 20 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1600 V	-	-	-	Through Hole	TO-220-3	-40°C ~ 150°C
RFUH25NS3SFHTL FAST RECOVERY DIODE (AEC-Q101 QU Rohm Semiconductor	1,000	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	350 V	20A	1.45 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 350 V	-	Automotive	AEC-Q101	Surface Mount	LPDS	150°C
VS-3C08EV07T-M3/I SIC-G3-SLIMDPAK 2L Vishay General Semiconductor - Diodes Division	4,288	-	RFQ	Datasheet	eSMP®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.5 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 650 V	340pF @ 1V, 1MHz	-	-	Surface Mount	SlimDPAK	-55°C ~ 175°C
IDH04SG60CXKSA2 DIODE SIL CARB 600V 4A TO220-2-1 Infineon Technologies	334	-	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	600 V	4A	2.3 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	25 µA @ 600 V	80pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
RFNL15TJ6SFHGC9 SUPER FAST RECOVERY DIODE : RFNL Rohm Semiconductor	1,000	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	600 V	15A	1.3 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	160 ns	10 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-220ACFP	150°C
YQ30NL10SEFHTL TRENCH MOS STRUCTURE, 100V, 30A, Rohm Semiconductor	954	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Schottky	100 V	30A	860 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 100 V	-	Automotive	AEC-Q101	Surface Mount	TO-263L	150°C
MUR30120BH-BP DIODE FAST REC 30A 1.2KV Micro Commercial Co	1,779	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	30A	2.4 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1200 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
FFSB0865B DIODE SIL CARB 650V 10.1A D2PAK onsemi	765	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10.1A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	-	40 µA @ 650 V	336pF @ 1V, 100kHz	-	-	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C
DST3060DJF DIODE SCHOTTKY 60V 30A 8DFN Littelfuse Inc.	17,683	-	RFQ	Datasheet	-	8-PowerVDFN	Tape & Reel (TR)	Active	Schottky	60 V	30A	770 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	6 mA @ 60 V	-	-	-	Surface Mount	8-PDFN (5x6)	-55°C ~ 150°C
PLDS3080H 30A, 800V, Standard Rectifier Taiwan Semiconductor Corporation	800	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	800 V	30A	1.18 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 800 V	138pF @ 4V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263 (D2PAK)	-55°C ~ 150°C
SF3008PT DIODE GEN PURP 600V 30A TO247AD Taiwan Semiconductor Corporation	772	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	600 V	30A	1.7 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	175pF @ 4V, 1MHz	-	-	Through Hole	TO-247AD (TO-3P)	-55°C ~ 150°C

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Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

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