Single Diodes

Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
SF3008PTH DIODE GEN PURP 600V 30A TO247AD Taiwan Semiconductor Corporation	688	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	600 V	30A	1.7 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	175pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-247AD (TO-3P)	-55°C ~ 150°C
SDS065J006S3-ISBRH DIODE 650V-6A DFN8*8-4L Luminus Devices Inc.	200	-	RFQ	Datasheet	Sanan DFN8	4-PowerVSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	23A	1.5 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	18 µA @ 650 V	310pF @ 0V, 1MHz	-	-	Surface Mount	4-DFN (8x8)	-55°C ~ 175°C
SDS065J008D3-ISARH DIODE 650V-8A TO252-2L Luminus Devices Inc.	200	-	RFQ	Datasheet	Sanan TO252	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.3 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	24 µA @ 650 V	-	-	-	Surface Mount	TO-252-2L	-55°C ~ 175°C
TRS8E65H,S1Q G3 SIC-SBD 650V 8A TO-220-2L Toshiba Semiconductor and Storage	338	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.35 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 650 V	520pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2L	175°C
FFSD1065B DIODE SIL CARB 650V 13.5A DPAK onsemi	4,116	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	13.5A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	424pF @ 1V, 100kHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
SE30124-M3/I 30A,1200V,DO-218AB RECTIFIER Vishay	3,000	-	RFQ	Datasheet	-	DO-218AB	Tape & Reel (TR)	Active	Standard	1200 V	4.2A	1.2 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1200 V	35pF @ 400V, 1MHz	-	-	Surface Mount	DO-218AB	-55°C ~ 175°C
VS-20ETF12FP-M3 DIODE GP 1.2KV 20A TO220-2FP Vishay General Semiconductor - Diodes Division	695	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	1200 V	20A	1.31 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	100 µA @ 1200 V	-	-	-	Through Hole	TO-220-2 Full Pack	-40°C ~ 150°C
BSDD08G65E2 DIODE SCHOT SIC 650V 8A TO252 Bourns Inc.	5,000	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	267pF @ 1V, 1MHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
SIT10C065 DIODE SIL CARB 650V 10A TO220AC Diotec Semiconductor	980	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 650 V	-	-	-	Through Hole	TO-220AC	-50°C ~ 175°C
VS-APU3006HN3 DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division	492	-	RFQ	Datasheet	FRED Pt®	TO-247-3	Tube	Active	Standard	600 V	30A	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	30 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AC	-40°C ~ 150°C
PCDF0465G1_T0_00601 650V/4A THROUGH HOLE SILICON CAR Panjit International Inc.	2,000	-	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	160pF @ 1V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 175°C
FFSM0865B DIODE SIL CARB 650V 11.6A 4PQFN onsemi	2,980	-	RFQ	Datasheet	-	4-PowerTSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	11.6A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	336pF @ 1V, 100kHz	-	-	Surface Mount	4-PQFN (8x8)	-55°C ~ 175°C
SDS065J008C3-ISATH DIODE 650V-8A TO220-2L Luminus Devices Inc.	200	-	RFQ	Datasheet	Sanan TO220	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	25A	1.5 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	24 µA @ 650 V	395pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
VS-20ETF04STRL-M3 DIODE GEN PURP 400V 20A TO263AB Vishay General Semiconductor - Diodes Division	7,894	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	400 V	20A	1.3 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	160 ns	100 µA @ 400 V	-	-	-	Surface Mount	TO-263AB (D2PAK)	-40°C ~ 150°C
PCDD0465GB_L2_00601 650V/4A IN TO-252AA PACKAGE SILI Panjit International Inc.	3,000	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.6 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	261pF @ 1V, 1MHz	-	-	Surface Mount	TO-252AA	-55°C ~ 175°C
TRS10V65H,LQ G3 SIC-SBD 650V 10A DFN8X8 Toshiba Semiconductor and Storage	3,975	-	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.35 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	649pF @ 1V, 1MHz	-	-	Surface Mount	4-DFN-EP (8x8)	175°C
IDWD30E120D7XKSA1 DIODE GEN PURP 1200V 52A TO247-2 Infineon Technologies	120	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	52A	3 V @ 30 A	Fast Recovery =< 500ns, > 5A (Io)	135 ns	20 µA @ 1200 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
D6015L52TP DIODE GP 600V 9.5A ITO220AB Littelfuse Inc.	457	-	RFQ	Datasheet	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	Standard	600 V	9.5A	1.6 V @ 15 A	Standard Recovery >500ns, > 200mA (Io)	4 µs	10 µA @ 600 V	-	-	-	Through Hole	ITO-220AB	-40°C ~ 125°C
SIT12C065 DIODE SIL CARB 650V 12A TO220AC Diotec Semiconductor	1,000	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.75 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 µA @ 650 V	-	-	-	Through Hole	TO-220AC	-50°C ~ 175°C
IDWD20E65E7XKSA1 HOME APPLIANCES 14 Infineon Technologies	220	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	650 V	42A	2.1 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	74 ns	20 µA @ 650 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C

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