Single Diodes
Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.
For BOM, shortage or hard-to-find requirements, send your part number and quantity to Winsun (HK) Electronics for availability, lead-time and quotation support.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RFUH20TJ6SFHGC9SUPER FAST RECOVERY DIODE : RFUH |
1,000 | - |
|
Datasheet | - | TO-220-2 Full Pack | Tube | Active | Standard | 600 V | 20A | 2.8 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 220 ns | 10 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-220ACFP | 150°C |
|
TRS12V65H,LQG3 SIC-SBD 650V 12A DFN8X8 |
4,472 | - |
|
Datasheet | - | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.35 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 778pF @ 1V, 1MHz | - | - | Surface Mount | 4-DFN-EP (8x8) | 175°C |
|
SDS120J005C3-ISATHDIODE 1200V-5A TO220-2L |
200 | - |
|
Datasheet | Sanan TO220 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 22A | 1.5 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | 400pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
|
VS-3C10EV07T-M3/ISIC-G3-SLIMDPAK 2L |
4,391 | - |
|
Datasheet | eSMP® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 55 µA @ 650 V | 445pF @ 1V, 1MHz | - | - | Surface Mount | SlimDPAK | -55°C ~ 175°C |
|
S6D20065ADIODE SCHOTTKY SILICON CARBIDE S |
250 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 61A | 1.6 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 1650pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
S3D15065IDIODE SCHOTTKY SILICON CARBIDE S |
990 | - |
|
Datasheet | - | TO-220-2 Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 42A | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 15 µA @ 650 V | 1243pF @ 0V, 1MHz | - | - | Through Hole | TO-220-Isolation | -55°C ~ 175°C |
|
SDS065J010D3-ISARHDIODE 650V-10A TO252-2L |
300 | - |
|
Datasheet | Sanan TO263 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 29A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 556pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2L | -55°C ~ 175°C |
|
S3D15065HDIODE SCHOTTKY SILICON CARBIDE S |
300 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 42A | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 15 µA @ 650 V | 1243pF @ 0V, 1MHz | - | - | Through Hole | TO-247AC | -55°C ~ 175°C |
|
TRS12E65H,S1QG3 SIC-SBD 650V 12A TO-220-2L |
370 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.35 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 778pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C |
|
BSDD10G65E2DIODE SCHOT SIC 650V 10A TO252 |
9,660 | - |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 323pF @ 1V, 1MHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
|
IDWD50E120D7XKSA1DIODE GEN PURP 1200V 81A TO247-2 |
230 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 1200 V | 81A | 3 V @ 50 A | Fast Recovery =< 500ns, > 5A (Io) | 160 ns | 20 µA @ 1200 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
|
SDS065J010C3-ISATHDIODE 650V-10A TO220-2L |
290 | - |
|
Datasheet | Sanan TO220 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 556pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
|
SDS120J010C3-ISATHDIODE 1200V-10A TO220-2L |
200 | - |
|
Datasheet | Sanan TO220 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 37A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | 780pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
|
FFSB0665ADIODE SIL CARB 650V 9A D2PAK-3 |
800 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 9A | 1.75 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 361pF @ 1V, 100kHz | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
|
FFSP2065BDIODE SIL CARB 650V 22.5A TO220 |
397 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 22.5A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 866pF @ 1V, 100kHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
SDS065J010E3-ISARHDIODE 650V-10A TO263-2L |
300 | - |
|
Datasheet | Sanan TO263 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 556pF @ 0V, 1MHz | - | - | Surface Mount | TO-263-2L | -55°C ~ 175°C |
|
BSDH10G120E2DIODE SIC 1200V 10A TO220-2 |
2,929 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.6 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 1200 V | 481pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
PCDP0465GB_T0_00601650V SIC SCHOTTKY BARRIER DIODE |
1,931 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.6 V @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
IDK08G65C5XTMA2DIODE SIL CARB 650V 8A TO263-2 |
959 | - |
|
Datasheet | CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | - | 250pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
|
FFSD1065B-F085DIODE SIL CARB 650V 13.5A DPAK |
1,968 | - |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 13.5A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 424pF @ 1V, 100kHz | Automotive | AEC-Q101 | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
Single Diodes FAQ
Common questions about selecting, comparing and sourcing Single Diodes components through Winsun (HK) Electronics.
What should I check when selecting Single Diodes components?
Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.
Can Winsun help source specific Single Diodes part numbers?
Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.
Do you support shortage, obsolete or hard-to-find Single Diodes parts?
Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.
How do I request a quote for Single Diodes components?
Submit an RFQ with the part number, manufacturer, quantity and target delivery requirement. Our sales team will review your request and follow up with current sourcing information.