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Single Diodes

Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

For BOM, shortage or hard-to-find requirements, send your part number and quantity to Winsun (HK) Electronics for availability, lead-time and quotation support.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
PSDH60120S1_T0_00001 Panjit International Inc.

PSDH60120S1_T0_00001

TO-247AD-2LD, FAST

Panjit International Inc.

3,904 -
Datasheet - TO-247-2 Tube Not For New Designs Standard 1200 V 60A 3.2 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 255 ns 250 µA @ 1200 V - - - Through Hole TO-247AD-2 -55°C ~ 150°C
PSDH6060S1_T0_00001 Panjit International Inc.

PSDH6060S1_T0_00001

TO-247AD-2LD, FAST

Panjit International Inc.

1,347 -
Datasheet - TO-247-2 Tube Active Standard 600 V 60A 2.3 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 85 ns 250 µA @ 600 V - - - Through Hole TO-247AD-2 -55°C ~ 150°C
IDWD40E65E7XKSA1 Infineon Technologies

IDWD40E65E7XKSA1

HOME APPLIANCES 14

Infineon Technologies

168 -
Datasheet - TO-247-2 Tube Active Standard 650 V 50A 2.1 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 89 ns 20 µA @ 650 V - - - Through Hole PG-TO247-2-2 -40°C ~ 175°C
VS-3C05ET12T-M3 Vishay General Semiconductor - Diodes Division

VS-3C05ET12T-M3

5A 1200V SIC ZERO QRR SINGLE TJM

Vishay General Semiconductor - Diodes Division

939 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 5A 1.5 V @ 5 A No Recovery Time > 500mA (Io) - 30 µA @ 1200 V 20pF @ 800V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
JAN1N5615 Microchip Technology

JAN1N5615

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

853 -
Datasheet - A, Axial Bulk Active Standard 200 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 200 V - Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
MUR60120BH-BP Micro Commercial Co

MUR60120BH-BP

SUPERFAST RECTIFIERS 1200V 60A,

Micro Commercial Co

1,800 -
Datasheet - TO-247-2 Tape & Reel (TR) Active Standard 1200 V 60A 3.3 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 85 ns 5 µA @ 1200 V 250pF @ 4V, 1MHz - - Through Hole TO-247AD -55°C ~ 175°C
VS-ETU3006STRLHM3 Vishay General Semiconductor - Diodes Division

VS-ETU3006STRLHM3

DIODE GEN PURP 600V 30A TO263AB

Vishay General Semiconductor - Diodes Division

208 -
Datasheet FRED Pt® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 30A 2 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 30 µA @ 600 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -65°C ~ 175°C
SDS065J010S3-ISBRH Luminus Devices Inc.

SDS065J010S3-ISBRH

DIODE 650V-10A DFN8*8-4L

Luminus Devices Inc.

300 -
Datasheet - 4-PowerVSFN Tape & Reel (TR) Active - 650 V 10A - - - - - - - Surface Mount 4-DFN (8x8) -
FFSM1065B onsemi

FFSM1065B

DIODE SIL CARB 650V 13.5A 4PQFN

onsemi

4,519 -
Datasheet - 4-PowerTSFN Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 13.5A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 424pF @ 1V, 100kHz - - Surface Mount 4-PQFN (8x8) -55°C ~ 175°C
IDWD50E65E7XKSA1 Infineon Technologies

IDWD50E65E7XKSA1

DIODE GEN PURP 650V 92A TO247-2

Infineon Technologies

220 -
Datasheet - TO-247-2 Tube Active Standard 650 V 92A 2.1 V @ 50 A Fast Recovery =< 500ns, > 5A (Io) 94 ns 20 µA @ 650 V - - - Through Hole PG-TO247-2-2 -40°C ~ 175°C
S5D05170H SMC Diode Solutions

S5D05170H

1700V, 5A, TO-247AC, SIC SCHOTTK

SMC Diode Solutions

121 -
Datasheet - TO-247-2 Tube Active Schottky 1700 V 22A 1.8 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 10 µA @ 1700 V 497pF @ 0V, 1MHz - - Through Hole TO-247AC -55°C ~ 175°C
IDWD60E120D7XKSA1 Infineon Technologies

IDWD60E120D7XKSA1

DIODE GEN PURP 1200V 94A TO247-2

Infineon Technologies

192 -
Datasheet - TO-247-2 Tube Active Standard 1200 V 94A 3 V @ 60 A Fast Recovery =< 500ns, > 5A (Io) 175 ns 20 µA @ 1200 V - - - Through Hole PG-TO247-2-2 -40°C ~ 175°C
E6D10065A Wolfspeed, Inc.

E6D10065A

SIC, SCHOTTKY DIODE

Wolfspeed, Inc.

985 -
Datasheet E TO-220-2 Bulk Last Time Buy SiC (Silicon Carbide) Schottky 650 V 34A 1.5 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 630pF @ 0V, 1MHz Automotive AEC-Q101 Through Hole TO-220-2 -55°C ~ 175°C
C3D08060G-TR Wolfspeed, Inc.

C3D08060G-TR

DIODE SCHOTTKY 600V 24A TO263-2

Wolfspeed, Inc.

780 -
Datasheet Z-Rec® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 600 V 24A 1.8 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 600 V 26pF @ 400V, 1MHz - - Surface Mount TO-263-2 -55°C ~ 175°C
PCDF0665G1_T0_00601 Panjit International Inc.

PCDF0665G1_T0_00601

650V/6A THROUGH HOLE SILICON CAR

Panjit International Inc.

2,000 -
Datasheet - TO-220-2 Full Pack, Isolated Tab Tube Active SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 232pF @ 1V, 1MHz - - Through Hole ITO-220AC -55°C ~ 175°C
PGR9016PT_T0_00301 Panjit International Inc.

PGR9016PT_T0_00301

STANDARD REVERSE RECOVERY POWER

Panjit International Inc.

2,100 -
Datasheet - - Tube Active - - - - - - - - - - - - -
TSCDT10065G1 Taiwan Semiconductor Corporation

TSCDT10065G1

DIODE SCHOTTKY 650V 10A TO220AC

Taiwan Semiconductor Corporation

2,986 -
Datasheet - TO-220-2 Tube Active Schottky 650 V 10A 1.45 V @ 10 A No Recovery Time > 500mA (Io) - 20 µA @ 650 V 45pF @ 400V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
TSCDF10065G1 Taiwan Semiconductor Corporation

TSCDF10065G1

DIODE SCHOTTKY 650V 10A ITO220AC

Taiwan Semiconductor Corporation

986 -
Datasheet - TO-220-2 Full Pack Tube Active Schottky 650 V 10A 1.45 V @ 10 A No Recovery Time > 500mA (Io) - 20 µA @ 650 V 45pF @ 400V, 1MHz - - Through Hole ITO-220AC -55°C ~ 175°C
VS-HFA08PB60-N3 Vishay General Semiconductor - Diodes Division

VS-HFA08PB60-N3

DIODE GP 600V 8A TO247AC

Vishay General Semiconductor - Diodes Division

250 -
Datasheet HEXFRED® TO-247-2 Tube Active Standard 600 V 8A 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 5 µA @ 600 V - - - Through Hole TO-247AC Modified -55°C ~ 150°C
PCDD0665GB_L2_00601 Panjit International Inc.

PCDD0665GB_L2_00601

650V/6A IN TO-252AA PACKAGE SILI

Panjit International Inc.

3,000 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.6 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 373pF @ 1V, 1MHz - - Surface Mount TO-252AA -55°C ~ 175°C
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WINSUN SOURCING SUPPORT

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FREQUENTLY ASKED QUESTIONS

Single Diodes FAQ

Common questions about selecting, comparing and sourcing Single Diodes components through Winsun (HK) Electronics.

What should I check when selecting Single Diodes components?

Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.

Can Winsun help source specific Single Diodes part numbers?

Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.

Do you support shortage, obsolete or hard-to-find Single Diodes parts?

Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

How do I request a quote for Single Diodes components?

Submit an RFQ with the part number, manufacturer, quantity and target delivery requirement. Our sales team will review your request and follow up with current sourcing information.