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Single Diodes

Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
VS-3C10CP12L-M3 Vishay General Semiconductor - Diodes Division

VS-3C10CP12L-M3

10A 1200V SIC ZERO QRR DUAL TJMA

Vishay General Semiconductor - Diodes Division

500 -
Datasheet - TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 1200 V 5A 1.5 V @ 5 A No Recovery Time > 500mA (Io) - 30 µA @ 1200 V 20pF @ 800V, 1MHz - - Through Hole TO-247AD -55°C ~ 175°C
SCS205KNHRTRL Rohm Semiconductor

SCS205KNHRTRL

1200V 5A SMD SILICON CARBIDE

Rohm Semiconductor

200 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 5A 1.6 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 260pF @ 1V, 1MHz Automotive AEC-Q101 Surface Mount TO-263L 175°C
BSDV10G120E2 Bourns Inc.

BSDV10G120E2

DIOD SCHOT SIC 1200V 10A TO247-2

Bourns Inc.

2,994 -
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1200 V 481pF @ 1V, 1MHz - - Through Hole TO-247 -55°C ~ 175°C
SCS310AGC16 Rohm Semiconductor

SCS310AGC16

DIODE SIL CARB 650V 10A TO220ACP

Rohm Semiconductor

1,000 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.5 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 500pF @ 1V, 1MHz - - Through Hole TO-220ACFP 175°C
PCDG10120GB_L2_00601 Panjit International Inc.

PCDG10120GB_L2_00601

SIC DIODE 1200V/10A IN TO-252AA

Panjit International Inc.

6,000 -
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - -
SDS065J016H3-ISATH Luminus Devices Inc.

SDS065J016H3-ISATH

DIODE 650V-16A TO247-2L

Luminus Devices Inc.

200 -
Datasheet Sanan TO247 TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 44A 1.5 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 48 µA @ 650 V 837pF @ 0V, 1MHz - - Through Hole TO-247-2L -55°C ~ 175°C
IDWD120E120D7XKSA1 Infineon Technologies

IDWD120E120D7XKSA1

DIODE GEN PURP 1200V 177A TO247

Infineon Technologies

129 -
Datasheet - TO-247-2 Tube Active Standard 1200 V 177A 3 V @ 120 A Fast Recovery =< 500ns, > 5A (Io) 215 ns 20 µA @ 1200 V - - - Through Hole PG-TO247-2-2 -40°C ~ 175°C
SIT20C065 Diotec Semiconductor

SIT20C065

DIODE SIL CARB 650V 20A TO220AC

Diotec Semiconductor

970 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.8 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 650 V - - - Through Hole TO-220AC -50°C ~ 175°C
SDS120J010E3-ISARH Luminus Devices Inc.

SDS120J010E3-ISARH

DIODE 1200V-10A TO263-2L

Luminus Devices Inc.

200 -
Datasheet Sanan TO263 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 37A 1.5 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 1200 V 780pF @ 0V, 1MHz - - Surface Mount TO-263-2L -55°C ~ 175°C
VS-90EPF12L-M3 Vishay General Semiconductor - Diodes Division

VS-90EPF12L-M3

DIODE GEN PURP 1.2KV 90A TO247AD

Vishay General Semiconductor - Diodes Division

466 -
Datasheet - TO-247-2 Tube Active Standard 1200 V 90A 1.38 V @ 90 A Fast Recovery =< 500ns, > 200mA (Io) 480 ns 100 µA @ 1200 V - - - Through Hole TO-247AD -40°C ~ 150°C
PCDF0865G1_T0_00601 Panjit International Inc.

PCDF0865G1_T0_00601

650V/8A THROUGH HOLE SILICON CAR

Panjit International Inc.

2,000 -
Datasheet - TO-220-2 Full Pack, Isolated Tab Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 300pF @ 1V, 1MHz - - Through Hole ITO-220AC -55°C ~ 175°C
FFSH3065B onsemi

FFSH3065B

DIODE SIL CARB 650V 37A TO247-2

onsemi

326 -
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 37A 1.7 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 1260pF @ 1V, 100kHz - - Through Hole TO-247-2 -55°C ~ 175°C
SDS065J020D3-ISARH Luminus Devices Inc.

SDS065J020D3-ISARH

DIODE 650V-20A TO252-2L

Luminus Devices Inc.

200 -
Datasheet Sanan TO252 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 51A 1.5 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 1018pF @ 0V, 1MHz - - Surface Mount TO-252-2L -55°C ~ 175°C
PCDP0865GB_T0_00601 Panjit International Inc.

PCDP0865GB_T0_00601

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

2,000 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.6 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 650 V 372pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
PCDP1065GC_T0_00601 Panjit International Inc.

PCDP1065GC_T0_00601

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

1,961 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.8 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 650 V 271pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
PSC1665JJ Nexperia USA Inc.

PSC1665JJ

SIC DIODES AND FETS

Nexperia USA Inc.

800 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), Variant Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 16A 1.8 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 180 µA @ 650 V 475pF @ 1V, 1MHz - - Surface Mount D2PAK R2P -55°C ~ 175°C
PCDD1065GB_L2_00601 Panjit International Inc.

PCDD1065GB_L2_00601

650V/10A IN TO-252AA PACKAGE SIL

Panjit International Inc.

3,000 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 610pF @ 1V, 1MHz - - Surface Mount TO-252AA -55°C ~ 175°C
VS-30EPF10-M3 Vishay General Semiconductor - Diodes Division

VS-30EPF10-M3

DIODE GP 1KV 30A TO247AC

Vishay General Semiconductor - Diodes Division

326 -
Datasheet - TO-247-2 Tube Active Standard 1000 V 30A 1.41 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 450 ns 100 µA @ 1000 V - - - Through Hole TO-247AC Modified -40°C ~ 150°C
JAN1N5809 Microchip Technology

JAN1N5809

DIODE GEN PURP 100V 6A AXIAL

Microchip Technology

117 -
Datasheet - B, Axial Bulk Active Standard 100 V 6A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
FFSP15120A onsemi

FFSP15120A

DIODE SIL CARB 1.2KV 15A TO220L

onsemi

574 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 15A 1.75 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 1200 V 936pF @ 1V, 100kHz - - Through Hole TO-220-2L -55°C ~ 175°C
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Single Diodes FAQ

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What should I check when selecting Single Diodes components?

Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.

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Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.

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Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

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Submit an RFQ with the part number, manufacturer, quantity and target delivery requirement. Our sales team will review your request and follow up with current sourcing information.