Single Diodes
Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.
For BOM, shortage or hard-to-find requirements, send your part number and quantity to Winsun (HK) Electronics for availability, lead-time and quotation support.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDWD120E65E7XKSA1DIODE GEN PURP 650V 150A TO247-2 |
210 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 650 V | 150A | 2.1 V @ 120 A | Fast Recovery =< 500ns, > 5A (Io) | 98 ns | 20 µA @ 650 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
|
VS-65EPS16L-M3DIODE GEN PURP 1.6KV 65A TO247AD |
184 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 1600 V | 65A | 1.17 V @ 65 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1600 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
|
C6D08065E-TRSIC, SCHOTTKY DIODE, 8A, 650V, T |
2,370 | - |
|
Datasheet | Z-Rec® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 29A | 1.5 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 518pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
C6D08065G-TRSIC, SCHOTTKY DIODE, 8A, 650V, T |
2,300 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.4 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 518pF @ 0V, 1MHz | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
|
C3D08065E-TRDIODE SIL CARB 650V 25.5A TO252 |
2,190 | - |
|
Datasheet | Z-Rec® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 25.5A | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 395pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
STPSC12065DDIODE SIL CARB 650V 12A TO220AC |
749 | - |
|
Datasheet | ECOPACK®2 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.45 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 150 µA @ 650 V | 750pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -40°C ~ 175°C |
|
SDS120J010D3-ISARHDIODE 1200V-10A TO252-2L |
200 | - |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 37A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | 780pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2L | -55°C ~ 175°C |
|
BSDD10S65E6DIODE SCHOT SIC 650V 10A TO252 |
4,995 | - |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.45 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 500pF @ 1V, 1MHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
|
BSDB10S65E6DIODE SCHOT SIC 650V 10A TO263 |
3,170 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.45 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 500pF @ 1V, 1MHz | - | - | Surface Mount | TO-263 | -55°C ~ 175°C |
|
BSDL10S65E6DIODE SIC SCHTKY 650V 10A DFN8X8 |
2,697 | - |
|
Datasheet | - | 4-PowerVSFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.45 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 650 V | 500pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | -55°C ~ 175°C |
|
FFSM1265ADIODE SIL CARB 650V 12.5A 4PQFN |
2,585 | - |
|
Datasheet | - | 4-PowerTSFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 12.5A | 1.75 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 665pF @ 1V, 100kHz | - | - | Surface Mount | 4-PQFN (8x8) | -55°C ~ 175°C |
|
PSC1065KQPSC1065K/SOT8021/TO220-2L |
974 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 340pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | 175°C |
|
IDWD60E65E7XKSA1DIODE GEN PURP 650V 100A TO247-2 |
187 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 650 V | 100A | 2.1 V @ 60 A | Fast Recovery =< 500ns, > 5A (Io) | 99 ns | 20 µA @ 650 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
|
IDWD75E120D7XKSA1DIODE GEN PURP 1200V 116A TO247 |
235 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 1200 V | 116A | 3 V @ 75 A | Fast Recovery =< 500ns, > 5A (Io) | 195 ns | 20 µA @ 1200 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
|
VS-3C05ET12S2L-M35A 1200V SIC ZERO QRR SINGLE TJM |
796 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.5 V @ 5 A | No Recovery Time > 500mA (Io) | - | 30 µA @ 1200 V | 20pF @ 800V, 1MHz | - | - | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 175°C |
|
IDWD75E65E7XKSA1DIODE GEN PURP 650V 100A TO247-2 |
210 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 650 V | 100A | 2.1 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 97 ns | 20 µA @ 650 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
|
SDS065J012S3-ISARHDIODE 650V-12A DFN8*8-4L |
200 | - |
|
Datasheet | Sanan DFN8 | 4-PowerVSFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 44A | 1.5 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 36 µA @ 650 V | 651pF @ 0V, 1MHz | - | - | Surface Mount | 4-DFN (8x8) | -55°C ~ 175°C |
|
PCDP0865GC_T0_00601650V SIC SCHOTTKY BARRIER DIODE |
2,000 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.8 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
|
APT60D120SGDIODE GEN PURP 1.2KV 60A D3 |
156 | - |
|
Datasheet | - | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | Standard | 1200 V | 60A | 2.5 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 250 µA @ 1200 V | - | - | - | Surface Mount | D3PAK | -55°C ~ 175°C |
|
FFSB2065BDIODE SIL CARB 650V 22.8A D2PAK |
2,178 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 22.8A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 866pF @ 1V, 100kHz | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
Single Diodes FAQ
Common questions about selecting, comparing and sourcing Single Diodes components through Winsun (HK) Electronics.
What should I check when selecting Single Diodes components?
Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.
Can Winsun help source specific Single Diodes part numbers?
Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.
Do you support shortage, obsolete or hard-to-find Single Diodes parts?
Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.
How do I request a quote for Single Diodes components?
Submit an RFQ with the part number, manufacturer, quantity and target delivery requirement. Our sales team will review your request and follow up with current sourcing information.