Single Diodes

Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
1N3600UR/TR SIGNAL OR COMPUTER DIODE Microchip Technology	177	-	RFQ	Datasheet	-	DO-213AA	Tape & Reel (TR)	Active	Standard	75 V	300mA	1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	100 nA @ 50 V	2.5pF @ 0V, 1MHz	-	-	Surface Mount	DO-213AA	-65°C ~ 175°C
FFSB1065A DIODE SCHOTTKY 650V 14A D2PAK-3 onsemi	800	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	14A	1.75 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 650 V	575pF @ 1V, 100kHz	-	-	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C
VS-65EPF12L-M3 DIODE GEN PURP 1.2KV 65A TO247AD Vishay General Semiconductor - Diodes Division	480	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	65A	1.42 V @ 65 A	Fast Recovery =< 500ns, > 200mA (Io)	480 ns	100 µA @ 1200 V	-	-	-	Through Hole	TO-247AD	-40°C ~ 150°C
PCDP0665GB_T0_00601 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,000	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.6 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	271pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
C3D10060G-TR DIODE SIL CARB 600V 29A TO263-2 Wolfspeed, Inc.	523	-	RFQ	Datasheet	Z-Rec®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	600 V	29A	1.8 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 600 V	480pF @ 0V, 1MHz	-	-	Surface Mount	TO-263-2	-55°C ~ 175°C
VS-3C10EP12L-M3 10A 1200V SIC ZERO QRR SINGLE TJ Vishay General Semiconductor - Diodes Division	500	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	-	60 µA @ 1200 V	38pF @ 800V, 1MHz	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
TSCDT12065G1 DIODE SCHOTTKY 650V 12A TO220AC Taiwan Semiconductor Corporation	990	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	Schottky	650 V	12A	1.45 V @ 12 A	No Recovery Time > 500mA (Io)	-	20 µA @ 650 V	55.3pF @ 400V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
TSCDF12065G1 DIODE SCHOTTKY 650V 12A ITO220AC Taiwan Semiconductor Corporation	1,000	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Schottky	650 V	12A	1.45 V @ 12 A	No Recovery Time > 500mA (Io)	-	20 µA @ 650 V	55.3pF @ 400V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 175°C
E6D10065G WOLFSPEED SIC, SCHOTTKY DIODE Wolfspeed, Inc.	1,000	-	RFQ	Datasheet	E	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Last Time Buy	SiC (Silicon Carbide) Schottky	650 V	32A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	630pF @ 0V, 1MHz	-	-	Surface Mount	TO-263-2	-55°C ~ 175°C
SCS210ANHRTRL 650V, 10A, SMD, SILICON-CARBIDE Rohm Semiconductor	870	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.55 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	360pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	LPDS	175°C
IDWD100E120D7XKSA1 DIODE GEN PURP 1200V 146A TO247 Infineon Technologies	224	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	146A	3 V @ 100 A	Fast Recovery =< 500ns, > 5A (Io)	205 ns	20 µA @ 1200 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
C6D10065E-TR SIC, SCHOTTKY DIODE, 10A, 650V, Wolfspeed, Inc.	4,750	-	RFQ	Datasheet	Z-Rec®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	35A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	611pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2	-55°C ~ 175°C
C3D10065E-TR DIODE SIL CARB 650V 32A TO252-2 Wolfspeed, Inc.	2,050	-	RFQ	Datasheet	Z-Rec®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	32A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	460.5pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2	-55°C ~ 175°C
PCDD0865GB_L2_00601 650V/8A IN TO-252AA PACKAGE SILI Panjit International Inc.	2,990	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.6 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	527pF @ 1V, 1MHz	-	-	Surface Mount	TO-252AA	-55°C ~ 175°C
IDWD100E65E7XKSA1 DIODE GEN PURP 650V 150A TO247-2 Infineon Technologies	232	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	650 V	150A	2.1 V @ 100 A	Fast Recovery =< 500ns, > 5A (Io)	98 ns	20 µA @ 650 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
VS-90EPS08L-M3 DIODE GEN PURP 800V 90A TO247AD Vishay General Semiconductor - Diodes Division	465	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	800 V	90A	1.2 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 800 V	-	-	-	Through Hole	TO-247AD	-40°C ~ 150°C
IDFW40E65D1EXKSA1 DIODE GP 650V 42A TO247-3-AI Infineon Technologies	210	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	650 V	42A	2.1 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	76 ns	40 µA @ 650 V	-	-	-	Through Hole	PG-TO247-3-AI	-40°C ~ 175°C
SCS310AMC7G DIODE SIL CARB 650V 10A TO220FM Rohm Semiconductor	1,000	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Through Hole	TO-220FM	175°C
SCS212ANHRTRL 650V 12A SMD SILICON CARBIDE Rohm Semiconductor	1,000	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.55 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	240 µA @ 600 V	440pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263L	175°C
FFSP3065B-F085 DIODE SIL CARB 650V 30A TO220-2 onsemi	1,600	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	30A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	1280pF @ 1V, 100kHz	Automotive	AEC-Q101	Through Hole	TO-220-2	-55°C ~ 175°C

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Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

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