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Single Diodes

Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
CRU24730-600 SL Central Semiconductor Corp

CRU24730-600 SL

RECTIFIER-ULTRA FAST <100

Central Semiconductor Corp

1,440 -
Datasheet - - Tube Active - - - - - - - - - - - - -
MBR30170MFST3G onsemi

MBR30170MFST3G

DIODE SCHOTTKY 170V 30A 5DFN

onsemi

5,000 -
Datasheet - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active Schottky 170 V 30A 890 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 170 V 821pF @ 1V, 1MHz - - Surface Mount 5-DFN (5x6) (8-SOFL) -55°C ~ 175°C
TRS6V65H,LQ Toshiba Semiconductor and Storage

TRS6V65H,LQ

G3 SIC-SBD 650V 6A DFN8X8

Toshiba Semiconductor and Storage

4,803 -
Datasheet - 4-VSFN Exposed Pad Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.35 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 650 V 392pF @ 1V, 1MHz - - Surface Mount 4-DFN-EP (8x8) 175°C
FESF16JTHE3_A/P Vishay General Semiconductor - Diodes Division

FESF16JTHE3_A/P

DIODE GEN PURP 600V 16A ITO220AC

Vishay General Semiconductor - Diodes Division

1,995 -
Datasheet - TO-220-2 Full Pack, Isolated Tab Tube Active Standard 600 V 16A 1.5 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 600 V - Automotive AEC-Q101 Through Hole ITO-220AC -65°C ~ 150°C
SF3006PT Taiwan Semiconductor Corporation

SF3006PT

DIODE GEN PURP 400V 30A TO247AD

Taiwan Semiconductor Corporation

806 -
Datasheet - TO-247-3 Tube Active Standard 400 V 30A 1.3 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 400 V 175pF @ 4V, 1MHz - - Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
YQ30NL10SETL Rohm Semiconductor

YQ30NL10SETL

TRENCH MOS STRUCTURE, 100V, 30A,

Rohm Semiconductor

990 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 100 V 30A 860 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 150 µA @ 100 V - - - Surface Mount TO-263L 150°C
VS-EPH3007L-N3 Vishay General Semiconductor - Diodes Division

VS-EPH3007L-N3

DIODE GEN PURP 650V 30A TO247AD

Vishay General Semiconductor - Diodes Division

390 -
Datasheet - TO-247-2 Tube Active Standard 650 V 30A 2.1 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 37 ns 30 µA @ 650 V - - - Through Hole TO-247AD -55°C ~ 175°C
VS-EPU3006LHN3 Vishay General Semiconductor - Diodes Division

VS-EPU3006LHN3

DIODE GEN PURP 600V 30A TO247AD

Vishay General Semiconductor - Diodes Division

499 -
Datasheet FRED Pt® TO-247-2 Tube Active Standard 600 V 30A 2 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 30 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
TRS6E65H,S1Q Toshiba Semiconductor and Storage

TRS6E65H,S1Q

G3 SIC-SBD 650V 6A TO-220-2L

Toshiba Semiconductor and Storage

194 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 6A 1.35 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 650 V 392pF @ 1V, 1MHz - - Through Hole TO-220-2L 175°C
BSDH08G65E2 Bourns Inc.

BSDH08G65E2

DIODE SCHOT SIC 650V 8A TO220-2

Bourns Inc.

3,000 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 267pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
VS-25ETS08S-M3 Vishay General Semiconductor - Diodes Division

VS-25ETS08S-M3

DIODE GEN PURP 800V 25A TO263AB

Vishay General Semiconductor - Diodes Division

7,049 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Standard 800 V 25A 1.14 V @ 25 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 800 V - - - Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
SDS065J006D3-ISARH Luminus Devices Inc.

SDS065J006D3-ISARH

DIODE 650V-6A TO252-2L

Luminus Devices Inc.

200 -
Datasheet Sanan TO263 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 20A 1.5 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 310pF @ 0V, 1MHz - - Surface Mount TO-252-2L -55°C ~ 175°C
VS-20ETF06STRL-M3 Vishay General Semiconductor - Diodes Division

VS-20ETF06STRL-M3

DIODE GEN PURP 600V 20A TO263AB

Vishay General Semiconductor - Diodes Division

6,202 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 20A 1.3 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 160 ns 100 µA @ 600 V - - - Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
IDW50E60FKSA1 Infineon Technologies

IDW50E60FKSA1

DIODE GEN PURP 600V 80A TO247-3

Infineon Technologies

240 -
Datasheet - TO-247-3 Tube Active Standard 600 V 80A 2 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 115 ns 40 µA @ 600 V - - - Through Hole PG-TO247-3 -40°C ~ 175°C
FFSB0665B onsemi

FFSB0665B

DIODE SIL CARB 650V 8A D2PAK-2

onsemi

712 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 6 A No Recovery Time > 500mA (Io) - 40 µA @ 650 V 259pF @ 1V, 100kHz - - Surface Mount TO-263 (D2PAK) -55°C ~ 175°C
SDS065J010N3-ISATH Luminus Devices Inc.

SDS065J010N3-ISATH

DIODE 650V-10A TO220N-2L

Luminus Devices Inc.

290 -
Datasheet Sanan TO220N TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 26A 1.5 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V 556pF @ 0V, 1MHz - - Through Hole TO-220N-2L -55°C ~ 175°C
BSDD06G65E2 Bourns Inc.

BSDD06G65E2

DIODE SIC 650V 6A TO252

Bourns Inc.

4,963 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) - 30 µA @ 650 V 201pF @ 1V, 1MHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
SDS065J006C3-ISATH Luminus Devices Inc.

SDS065J006C3-ISATH

DIODE 650V-6A TO220-2L

Luminus Devices Inc.

200 -
Datasheet Sanan TO220 TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.5 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 310pF @ 0V, 1MHz - - Through Hole TO-220-2L -55°C ~ 175°C
VS-8EWS12STRL-M3 Vishay General Semiconductor - Diodes Division

VS-8EWS12STRL-M3

DIODE GEN PURP 1.2KV 8A D-PAK

Vishay General Semiconductor - Diodes Division

2,900 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 1200 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 1200 V - - - Surface Mount TO-252AA (DPAK) -55°C ~ 150°C
SDS065J006E3-ISARH Luminus Devices Inc.

SDS065J006E3-ISARH

DIODE 650V-6A TO263-2L

Luminus Devices Inc.

200 -
Datasheet Sanan TO263 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 20A 1.5 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 310pF @ 0V, 1MHz - - Surface Mount TO-263-2L -55°C ~ 175°C
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Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.

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Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.

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Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

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