Single Diodes
Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.
For BOM, shortage or hard-to-find requirements, send your part number and quantity to Winsun (HK) Electronics for availability, lead-time and quotation support.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N4938DIODE GEN PURP 200V 500MA DO35 |
57,593 | - |
|
Datasheet | - | DO-204AH, DO-35, Axial | Bulk | Obsolete | Standard | 200 V | 500mA | 1 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 100 nA @ 75 V | 5pF @ 0V, 1MHz | - | - | Through Hole | DO-204AH (DO-35) | 175°C (Max) |
|
STPSC6H065BY-TRDIODE SIL CARBIDE 650V 6A DPAK |
7,471 | - |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | - | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 300pF @ 0V, 1MHz | Automotive | AEC-Q101 | Surface Mount | DPAK | -40°C ~ 175°C |
|
IDK10G65C5XTMA1DIODE SIL CARB 650V 10A TO263-2 |
5,530 | - |
|
Datasheet | CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 1.7 mA @ 650 V | 300pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
|
WNSC2D08650DJDIODE SIL CARBIDE 650V 8A DPAK |
7,463 | - |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Surface Mount | DPAK | 175°C |
|
BYQ60W-600PT2QDIODE GEN PURP 600V 60A TO247-2 |
569 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 600 V | 60A | 2 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-247-2 | 175°C |
|
BYV60W-600PT2QDIODE GEN PURP 600V 60A TO247-2 |
468 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 600 V | 60A | 1.7 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 79 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-247-2 | 175°C |
|
SCS304APC9DIODE SILICON CARBIDE 650V 4A |
862 | - |
|
Datasheet | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.5 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 200pF @ 1V, 1MHz | - | - | Through Hole | - | 175°C (Max) |
|
RFUS20NS4STLDIODE GEN PURP 430V 20A LPDS |
259 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 430 V | 20A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | - | - | Surface Mount | LPDS | 150°C (Max) |
|
RBQ30NS45BTLDIODE SCHOTTKY 45V 30A LPDS |
706 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Schottky | 45 V | 30A | 590 mV @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350 µA @ 45 V | - | - | - | Surface Mount | LPDS | 150°C |
|
WNSC2D10650QDIODE SIL CARB 650V 10A TO220AC |
995 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 310pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C |
|
MUR3040DIODE GEN PURP 400V 15A TO218 |
7,505 | - |
|
Datasheet | - | TO-218-2 | Bulk | Active | Standard | 400 V | 30A | 1.5 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 35 µA @ 400 V | 175pF @ 4V, 1MHz | - | - | Through Hole | TO-218 | -65°C ~ 175°C |
|
SDT05S60DIODE SIL CARB 600V 5A TO220-2 |
2,481 | - |
|
Datasheet | CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 5A | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 170pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
RHRU5060DIODE AVALANCHE 600V 50A TO218 |
734 | - |
|
Datasheet | - | TO-218-1 | Bulk | Active | Avalanche | 600 V | 50A | 2.1 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 500 µA @ 600 V | - | - | - | Chassis Mount | TO-218 | -65°C ~ 175°C |
|
WNSC6D166506QDIODE SIL CARB 650V 16A TO220AC |
2,976 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.45 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 780pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C |
|
RURG8080DIODE AVALANCHE 800V 80A TO247-2 |
703 | - |
|
Datasheet | - | TO-247-2 | Bulk | Active | Avalanche | 800 V | 80A | 1.9 V @ 80 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 500 µA @ 800 V | - | - | - | Through Hole | TO-247-2 | -65°C ~ 175°C |
|
RURG8070DIODE AVALANCHE 700V 80A TO247-2 |
450 | - |
|
Datasheet | - | TO-247-2 | Bulk | Active | Avalanche | 700 V | 80A | 1.9 V @ 80 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 500 µA @ 700 V | - | - | - | Through Hole | TO-247-2 | -65°C ~ 175°C |
|
BYC30W-600PT2QDIODE GEN PURP 600V 30A TO247-2 |
1,787 | - |
|
Datasheet | - | TO-247-2 | Bulk | Active | Standard | 600 V | 30A | 2.75 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 34 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-247-2 | 175°C (Max) |
|
PSDH60120L1_T0_00001TO-247AD-2LD, FAST |
1,500 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 1200 V | 60A | 2.5 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 330 ns | 250 µA @ 1200 V | - | - | - | Through Hole | TO-247AD-2 | -55°C ~ 150°C |
|
S3D08065LDIODE SIL CARBIDE 650V 24A 5DFN |
1,200 | - |
|
Datasheet | - | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 24A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 650pF @ 0V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | -55°C ~ 175°C |
|
BYC30W-1200PQDIODE GEN PURP 1.2KV 30A TO247-2 |
386 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 1200 V | 30A | 3.3 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 65 ns | 250 µA @ 1200 V | - | - | - | Through Hole | TO-247-2 | 175°C (Max) |
Single Diodes FAQ
Common questions about selecting, comparing and sourcing Single Diodes components through Winsun (HK) Electronics.
What should I check when selecting Single Diodes components?
Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.
Can Winsun help source specific Single Diodes part numbers?
Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.
Do you support shortage, obsolete or hard-to-find Single Diodes parts?
Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.
How do I request a quote for Single Diodes components?
Submit an RFQ with the part number, manufacturer, quantity and target delivery requirement. Our sales team will review your request and follow up with current sourcing information.