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Single Diodes

Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

For BOM, shortage or hard-to-find requirements, send your part number and quantity to Winsun (HK) Electronics for availability, lead-time and quotation support.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
WNSC2D10650TJ WeEn Semiconductors

WNSC2D10650TJ

DIODE SIL CARBIDE 650V 10A 5DFN

WeEn Semiconductors

890 -
Datasheet - 4-VSFN Exposed Pad Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 310pF @ 1V, 1MHz - - Surface Mount 5-DFN (8x8) 175°C
WNSC2D10650WQ WeEn Semiconductors

WNSC2D10650WQ

DIODE SIL CARB 650V 10A TO247-2

WeEn Semiconductors

517 -
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 310pF @ 1V, 1MHz - - Through Hole TO-247-2 175°C
STTH806D STMicroelectronics

STTH806D

DIODE GEN PURP 600V 8A TO220AC

STMicroelectronics

3,924 -
Datasheet - TO-220-2 Tube Obsolete Standard 600 V 8A 1.85 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 8 µA @ 600 V - - - Through Hole TO-220AC 175°C (Max)
IDK12G65C5XTMA1 Infineon Technologies

IDK12G65C5XTMA1

DIODE SIL CARB 650V 12A TO263-2

Infineon Technologies

9,817 -
Datasheet CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 12A 1.8 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 2.1 mA @ 650 V 360pF @ 1V, 1MHz - - Surface Mount PG-TO263-2 -55°C ~ 175°C
VS-10ETF10-M3 Vishay General Semiconductor - Diodes Division

VS-10ETF10-M3

DIODE GEN PURP 1KV 10A TO220AC

Vishay General Semiconductor - Diodes Division

4,509 -
Datasheet - TO-220-2 Tube Active Standard 1000 V 10A 1.33 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 310 ns 100 µA @ 1000 V - - - Through Hole TO-220AC -40°C ~ 150°C
RURU5050 Harris Corporation

RURU5050

DIODE AVALANCHE 500V 50A TO218

Harris Corporation

580 -
Datasheet - TO-218-1 Bulk Active Avalanche 500 V 50A 1.6 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 500 µA @ 500 V - - - Chassis Mount TO-218 -65°C ~ 175°C
PCDB0465G1_R2_00001 Panjit International Inc.

PCDB0465G1_R2_00001

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

2,400 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 4A 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 146pF @ 1V, 1MHz - - Surface Mount TO-263 -55°C ~ 175°C
NRVB120ESFT1G onsemi

NRVB120ESFT1G

DIODE SCHOTTKY 20V 1A SOD123FL

onsemi

7,643 -
Datasheet - SOD-123F Tape & Reel (TR) Obsolete Schottky 20 V 1A 530 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 10 µA @ 20 V - - - Surface Mount SOD-123FL -65°C ~ 150°C
S6D10065L SMC Diode Solutions

S6D10065L

650V, 10A, DFN88, SIC SCHOTTKY D

SMC Diode Solutions

833 -
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - -
RHRU50100 Harris Corporation

RHRU50100

DIODE AVALANCHE 1KV 50A TO218

Harris Corporation

280 -
Datasheet - TO-218-1 Bulk Active Avalanche 1000 V 50A 3 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 95 ns 500 µA @ 1000 V - - - Chassis Mount TO-218 -65°C ~ 175°C
SICR10650CT SMC Diode Solutions

SICR10650CT

DIODE SIL CARB 650V 5A TO220AB

SMC Diode Solutions

225 -
Datasheet - TO-220-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 5A 1.7 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V - - - Through Hole TO-220AB -55°C ~ 175°C
SICRF5650 SMC Diode Solutions

SICRF5650

DIODE SIL CARB 650V 5A ITO220AC

SMC Diode Solutions

224 -
Datasheet - TO-220-2 Full Pack, Isolated Tab Tube Active SiC (Silicon Carbide) Schottky 650 V 5A 1.7 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V - - - Through Hole ITO-220AC -55°C ~ 175°C
SICR5650 SMC Diode Solutions

SICR5650

DIODE SIL CARB 650V 5A TO220AC

SMC Diode Solutions

158 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 5A 1.7 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V - - - Through Hole TO-220AC -55°C ~ 175°C
MUR6060BS-BP Micro Commercial Co

MUR6060BS-BP

DIODE GEN PURP 600V 60A TO247AD

Micro Commercial Co

1,680 -
Datasheet - TO-247-2 Tube Active Standard 600 V 60A 2.5 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 600 V 200pF @ 4V, 1MHz - - Through Hole TO-247AD -55°C ~ 175°C
BYC75W-600PT2Q WeEn Semiconductors

BYC75W-600PT2Q

DIODE GEN PURP 600V 75A TO247-2

WeEn Semiconductors

508 -
Datasheet - TO-247-2 Tube Active Standard 600 V 75A 2.75 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 600 V - - - Through Hole TO-247-2 175°C
WNSC6D16650CW6Q WeEn Semiconductors

WNSC6D16650CW6Q

DIODE SIL CARB 650V 16A TO247-3

WeEn Semiconductors

3,000 -
Datasheet - TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 16A 1.45 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 650 V 780pF @ 1V, 1MHz - - Through Hole TO-247-3 175°C
MUR6060BH-BP Micro Commercial Co

MUR6060BH-BP

DIODE GEN PURP 600V 60A TO247AD

Micro Commercial Co

1,798 -
Datasheet - TO-247-2 Tube Active Standard 600 V 60A 2.4 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 70 ns 10 µA @ 600 V 400pF @ 4V, 1MHz - - Through Hole TO-247AD -55°C ~ 175°C
NRVBB4030T4G onsemi

NRVBB4030T4G

DIODE SCHOTTKY 30V 40A D2PAK

onsemi

6,765 -
Datasheet SWITCHMODE™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete Schottky 30 V 40A 550 mV @ 40 A Fast Recovery =< 500ns, > 200mA (Io) - 350 µA @ 30 V - - - Surface Mount D2PAK -65°C ~ 175°C
PCDP0465G1_T0_00001 Panjit International Inc.

PCDP0465G1_T0_00001

TO-220AC, SIC

Panjit International Inc.

1,996 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 4A 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 146pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
FFSD0465A onsemi

FFSD0465A

DIODE SIL CARB 650V 7.6A DPAK

onsemi

2,442 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 7.6A 1.75 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 258pF @ 1V, 100kHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
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WINSUN SOURCING SUPPORT

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Send the manufacturer, part number, quantity and target delivery requirement. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and hard-to-find or obsolete components.

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FREQUENTLY ASKED QUESTIONS

Single Diodes FAQ

Common questions about selecting, comparing and sourcing Single Diodes components through Winsun (HK) Electronics.

What should I check when selecting Single Diodes components?

Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.

Can Winsun help source specific Single Diodes part numbers?

Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.

Do you support shortage, obsolete or hard-to-find Single Diodes parts?

Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

How do I request a quote for Single Diodes components?

Submit an RFQ with the part number, manufacturer, quantity and target delivery requirement. Our sales team will review your request and follow up with current sourcing information.