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Single Diodes

Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

For BOM, shortage or hard-to-find requirements, send your part number and quantity to Winsun (HK) Electronics for availability, lead-time and quotation support.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
PSDB3060L1_T0_00001 Panjit International Inc.

PSDB3060L1_T0_00001

TO-263, FRED

Panjit International Inc.

1,658 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Standard 600 V 30A 1.8 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 115 ns 250 µA @ 600 V - - - Surface Mount TO-263 -55°C ~ 150°C
WNSC2D10650BJ WeEn Semiconductors

WNSC2D10650BJ

DIODE SIL CARBIDE 650V 10A D2PAK

WeEn Semiconductors

8,768 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 310pF @ 1V, 1MHz - - Surface Mount D2PAK 175°C
PSDH30120L1_T0_00001 Panjit International Inc.

PSDH30120L1_T0_00001

TO-247AD-2LD, FAST

Panjit International Inc.

1,460 -
Datasheet - TO-247-2 Tube Not For New Designs Standard 1200 V 30A 2.6 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 240 ns 250 µA @ 1200 V - - - Through Hole TO-247AD-2 -55°C ~ 150°C
PSDH30120S1_T0_00001 Panjit International Inc.

PSDH30120S1_T0_00001

TO-247AD-2LD, FAST

Panjit International Inc.

1,388 -
Datasheet - TO-247-2 Tube Active Standard 1200 V 30A 3.5 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 250 µA @ 1200 V - - - Through Hole TO-247AD-2 -55°C ~ 150°C
S4D10120G0 SMC Diode Solutions

S4D10120G0

DIODE SCHOTTKY SILICON CARBIDE S

SMC Diode Solutions

800 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 30A 1.8 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 1200 V 772pF @ 0V, 1MHz - - Surface Mount TO-263-2 -55°C ~ 175°C
S4D10120G SMC Diode Solutions

S4D10120G

1200V, 10A, D2PAK, SIC SCHOTTKY

SMC Diode Solutions

133 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active - - - - - - - - - - Surface Mount TO-263-2 -
WNSC2D12650TJ WeEn Semiconductors

WNSC2D12650TJ

DIODE SIL CARBIDE 650V 12A 5DFN

WeEn Semiconductors

2,985 -
Datasheet - 4-VSFN Exposed Pad Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 380pF @ 1V, 1MHz - - Surface Mount 5-DFN (8x8) 175°C
SCS310AHGC9 Rohm Semiconductor

SCS310AHGC9

DIODE SIL CARB 650V 10A TO220ACP

Rohm Semiconductor

361 -
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 10A 1.5 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 500pF @ 1V, 1MHz - - Through Hole TO-220ACP 175°C (Max)
RURU5060 Harris Corporation

RURU5060

DIODE AVALANCHE 600V 50A TO218

Harris Corporation

3,504 -
Datasheet - TO-218-1 Bulk Active Avalanche 600 V 50A 1.6 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 500 µA @ 600 V - - - Chassis Mount TO-218 -65°C ~ 175°C
RURG8050 Harris Corporation

RURG8050

DIODE AVALANCHE 500V 80A TO247-2

Harris Corporation

481 -
Datasheet - TO-247-2 Bulk Active Avalanche 500 V 80A 1.6 V @ 80 A Fast Recovery =< 500ns, > 200mA (Io) 85 ns 500 µA @ 500 V - - - Through Hole TO-247-2 -65°C ~ 175°C
RURU8040 Harris Corporation

RURU8040

DIODE AVALANCHE 400V 80A TO218

Harris Corporation

3,000 -
Datasheet - TO-218-1 Bulk Active Avalanche 400 V 80A 1.6 V @ 80 A Fast Recovery =< 500ns, > 200mA (Io) 85 ns 500 µA @ 400 V - - - Chassis Mount TO-218 -65°C ~ 175°C
WNSC12650T6J WeEn Semiconductors

WNSC12650T6J

DIODE SIL CARBIDE 650V 12A 5DFN

WeEn Semiconductors

2,998 -
Datasheet - 4-VSFN Exposed Pad Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 12A 1.8 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 328pF @ 1V, 1MHz - - Surface Mount 5-DFN (8x8) 175°C
IDT10S60C Infineon Technologies

IDT10S60C

DIODE SIL CARB 600V 10A TO220-2

Infineon Technologies

1,479 -
Datasheet thinQ!™ TO-220-2 Bulk Active SiC (Silicon Carbide) Schottky 600 V 10A (DC) 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 140 µA @ 600 V 480pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
SICU0460B-TP Micro Commercial Co

SICU0460B-TP

DIODE SIL CARBIDE 650V 4A DPAK

Micro Commercial Co

2,413 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 4A 1.8 V @ 4 A No Recovery Time > 500mA (Io) - 15 µA @ 650 V 200pF @ 0V, 1MHz - - Surface Mount DPAK -55°C ~ 175°C
FFSH1665A onsemi

FFSH1665A

DIODE SIL CARB 650V 23A TO247-2

onsemi

8,896 -
Datasheet - TO-247-2 Bulk Obsolete SiC (Silicon Carbide) Schottky 650 V 23A - No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 887pF @ 1V, 100kHz - - Through Hole TO-247-2 -55°C ~ 150°C
FFSP0465A onsemi

FFSP0465A

DIODE SIL CARB 650V 8.6A TO220-2

onsemi

792 -
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 8.6A 1.75 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 258pF @ 1V, 100kHz - - Through Hole TO-220-2 -55°C ~ 175°C
NXPSC066506Q WeEn Semiconductors

NXPSC066506Q

DIODE SIL CARB 650V 6A TO220AC

WeEn Semiconductors

3,000 -
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 190pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
PCDD0665G1_L2_00001 Panjit International Inc.

PCDD0665G1_L2_00001

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

2,976 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 228pF @ 1V, 1MHz - - Surface Mount TO-252AA -55°C ~ 175°C
NXPSC06650B6J WeEn Semiconductors

NXPSC06650B6J

DIODE SIL CARBIDE 650V 6A D2PAK

WeEn Semiconductors

3,188 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 190pF @ 1V, 1MHz - - Surface Mount D2PAK 175°C (Max)
PCDB0665G1_R2_00001 Panjit International Inc.

PCDB0665G1_R2_00001

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

800 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 228pF @ 1V, 1MHz - - Surface Mount TO-263 -55°C ~ 175°C
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WINSUN SOURCING SUPPORT

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FREQUENTLY ASKED QUESTIONS

Single Diodes FAQ

Common questions about selecting, comparing and sourcing Single Diodes components through Winsun (HK) Electronics.

What should I check when selecting Single Diodes components?

Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.

Can Winsun help source specific Single Diodes part numbers?

Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.

Do you support shortage, obsolete or hard-to-find Single Diodes parts?

Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

How do I request a quote for Single Diodes components?

Submit an RFQ with the part number, manufacturer, quantity and target delivery requirement. Our sales team will review your request and follow up with current sourcing information.