Single Diodes
Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.
For BOM, shortage or hard-to-find requirements, send your part number and quantity to Winsun (HK) Electronics for availability, lead-time and quotation support.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PCDP05120G1_T0_00001TO-220AC, SIC |
1,943 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | 252pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
PCDP1265G1_T0_00001TO-220AC, SIC |
2,000 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 452pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
NXPSC06650X6QDIODE SIL CARBIDE 650V 6A TO220F |
197 | - |
|
Datasheet | - | TO-220-2 Full Pack, Isolated Tab | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 190pF @ 1V, 1MHz | - | - | Through Hole | TO-220F | 175°C (Max) |
|
IDH10S60CAKSA1DIODE SIL CARB 600V 10A TO220-2 |
6,184 | - |
|
Datasheet | CoolSiC™+ | TO-220-2 | Bulk | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 140 µA @ 600 V | 480pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
PCDP0665G1_T0_00001TO-220AC, SIC |
1,998 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 228pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
WND45P16WQDIODE GEN PURP 1.6KV 45A TO247-2 |
1,008 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 1600 V | 45A | 1.4 V @ 45 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1600 V | - | - | - | Through Hole | TO-247-2 | 150°C |
|
MUR6060B-BPDIODE GEN PURP 600V 60A TO247AD |
512 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 600 V | 60A | 1.7 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 15 µA @ 600 V | - | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
FFSB0465ADIODE SIL CARB 650V 7.7A D2PAK-2 |
770 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 7.7A | 1.75 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 258pF @ 1V, 100kHz | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
|
CDBJFSC5650-GDIODE SIL CARBIDE 650V 5A TO220F |
346 | - |
|
Datasheet | - | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 5A | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 430pF @ 0V, 1MHz | - | - | Through Hole | TO-220F | -55°C ~ 175°C |
|
|
SICRF10650DIODE SIL CARB 650V 10A ITO220AC |
194 | - |
|
Datasheet | - | TO-220-2 Full Pack, Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 695pF @ 0V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 175°C |
|
PSDH6060L1_T0_00001TO-247AD-2LD, FAST |
1,425 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 600 V | 60A | 1.75 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 205 ns | 250 µA @ 600 V | - | - | - | Through Hole | TO-247AD-2 | -55°C ~ 150°C |
|
MBRB2515LT4GDIODE SCHOTTKY 15V 25A D2PAK |
214 | - |
|
Datasheet | SWITCHMODE™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | Schottky | 15 V | 25A | 450 mV @ 25 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 15 mA @ 15 V | - | - | - | Surface Mount | D2PAK | 100°C (Max) |
|
S3D20065EDIODE SCHOTTKY SILICON CARBIDE S |
2,500 | - |
|
Datasheet | - | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | Surface Mount | 5-DFN (8x8) | - |
|
STPSC6H12B-TR1DIODE SIL CARBIDE 1.2KV 6A DPAK |
7,403 | - |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 6A | 1.9 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 1200 V | 330pF @ 0V, 1MHz | - | - | Surface Mount | DPAK | -40°C ~ 175°C |
|
|
VS-100BGQ030DIODE SCHOTTKY 30V 100A POWIRTAB |
144 | - |
|
Datasheet | - | PowerTab™, PowIRtab™ | Bulk | Obsolete | Schottky | 30 V | 100A | 580 mV @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2.4 mA @ 30 V | - | - | - | Chassis Mount | PowIRtab™ | -55°C ~ 150°C |
|
RHRU75100DIODE AVALANCHE 1KV 75A TO218 |
149 | - |
|
Datasheet | - | TO-218-1 | Bulk | Active | Avalanche | 1000 V | 75A | 3 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 500 µA @ 1000 V | - | - | - | Chassis Mount | TO-218 | -65°C ~ 175°C |
|
RHRU7540DIODE AVALANCHE 400V 75A TO218 |
549 | - |
|
Datasheet | - | TO-218-1 | Bulk | Active | Avalanche | 400 V | 75A | 2.1 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 500 µA @ 400 V | - | - | - | Chassis Mount | TO-218 | -65°C ~ 175°C |
|
FFSPF0665ADIODE SIC 650V 6A TO220F-2FS |
898 | - |
|
Datasheet | - | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.75 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 361pF @ 1V, 100kHz | - | - | Through Hole | TO-220F-2FS | -55°C ~ 175°C |
|
IV1D06006O2DIODE SIL CARB 650V 17.4A TO220 |
132 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 17.4A | 1.65 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 650 V | 212pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
CDBD2SC21200-GDIODE SIL CARB 1.2KV 6.2A TO263 |
381 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 6.2A | 1.7 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 136pF @ 0V, 1MHz | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
Single Diodes FAQ
Common questions about selecting, comparing and sourcing Single Diodes components through Winsun (HK) Electronics.
What should I check when selecting Single Diodes components?
Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.
Can Winsun help source specific Single Diodes part numbers?
Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.
Do you support shortage, obsolete or hard-to-find Single Diodes parts?
Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.
How do I request a quote for Single Diodes components?
Submit an RFQ with the part number, manufacturer, quantity and target delivery requirement. Our sales team will review your request and follow up with current sourcing information.