FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
G36N03K N30V,36A,RD<8.5M@10V,VTH1.0V~2.2 Goford Semiconductor	2,486	-	RFQ	Datasheet	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	36A (Tc)	4.5V, 10V	8.5mOhm @ 20A, 10V	2.2V @ 250µA	14 nC @ 10 V	±20V	1040 pF @ 15 V	-	31W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252
G15N10C N100V,RD(MAX)<110M@10V,RD(MAX)<1 Goford Semiconductor	2,081	-	RFQ	Datasheet	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	22A (Tc)	4.5V, 10V	90mOhm @ 8A, 10V	3V @ 250µA	22 nC @ 10 V	±20V	1167 pF @ 50 V	-	55W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252
G080P06T MOSFET P-CH 60V 195A TO-220 Goford Semiconductor	5,000	-	RFQ	Datasheet	TrenchFET®	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	-	195A (Tc)	10V	7.5mOhm @ 20A, 10V	4V @ 250µA	-	±20V	-	-	294W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
G15N06K N-CH, 60V,15A,RD(MAX)<45M@10V,RD Goford Semiconductor	11,877	-	RFQ	Datasheet	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	15A (Tc)	4.5V, 10V	45mOhm @ 8A, 10V	3V @ 250µA	25 nC @ 10 V	±20V	762 pF @ 30 V	-	40W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252
G30N03D3 N30V,RD(MAX)<7M@10V,RD(MAX)<12M@ Goford Semiconductor	4,905	-	RFQ	Datasheet	TrenchFET®	8-PowerVDFN	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	42A (Tc)	4.5V, 10V	7mOhm @ 20A, 10V	2.5V @ 250µA	13 nC @ 10 V	±20V	1260 pF @ 15 V	-	25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (3.15x3.05)
G04P10HE P-100V,-4A,RD(MAX)<200M@-10V,VTH Goford Semiconductor	3,858	-	RFQ	Datasheet	TrenchFET®	TO-261-4, TO-261AA	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	100 V	4A (Tc)	4.5V, 10V	200mOhm @ 6A, 10V	2.8V @ 250µA	25 nC @ 10 V	±20V	1647 pF @ 50 V	-	1.2W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223
G2K2P10SE P-100V, 3.5A,RD<200M@-10V,VTH1V~ Goford Semiconductor	3,755	-	RFQ	Datasheet	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	100 V	3.5A (Tc)	4.5V, 10V	200mOhm @ 3A, 10V	2.5V @ 250µA	23 nC @ 10 V	±20V	1653 pF @ 50 V	-	3.1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOP
4435 P30V,RD(MAX)<20M@-10V,RD(MAX)<33 Goford Semiconductor	3,726	-	RFQ	Datasheet	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	30 V	11A (Tc)	4.5V, 10V	20mOhm @ 10A, 10V	2.5V @ 250µA	40 nC @ 10 V	±20V	1818 pF @ 15 V	-	2.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOP
G20N03K N30V,RD(MAX)<20M@10V,RD(MAX)<24M Goford Semiconductor	2,843	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	30A (Tc)	4.5V, 10V	20mOhm @ 10A, 10V	2.5V @ 250µA	18 nC @ 10 V	±20V	923 pF @ 15 V	-	33W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252
G140P04K MOSFET P-CH 40V 45A 60W TO-252 Goford Semiconductor	2,500	-	RFQ	Datasheet	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	40 V	45A (Tc)	10V	12mOhm @ 20A, 10V	4V @ 250µA	42 nC @ 10 V	±20V	2261 pF @ 20 V	-	60W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252

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FETs, MOSFETs FAQ

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Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

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