FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
G50N03K N30V,RD(MAX)<7M@10V,RD(MAX)<12M@ Goford Semiconductor	4,483	-	RFQ	Datasheet	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	65A (Tc)	4.5V, 10V	7mOhm @ 20A, 10V	2.5V @ 250µA	16.6 nC @ 10 V	±20V	1245 pF @ 15 V	-	48W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252
G15P04K P40V,RD(MAX)<39M@-10V,RD(MAX)<70 Goford Semiconductor	4,460	-	RFQ	Datasheet	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	40 V	15A (Tc)	4.5V, 10V	39mOhm @ 10A, 10V	3V @ 250µA	25 nC @ 10 V	±20V	930 pF @ 20 V	-	50W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252
G23N06K N60V,RD(MAX)<35M@10V,RD(MAX)<45M Goford Semiconductor	3,415	-	RFQ	Datasheet	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	23A (Tc)	4.5V, 10V	35mOhm @ 20A, 10V	2.5V @ 250µA	25 nC @ 10 V	±20V	1343 pF @ 15 V	-	38W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252
G6K8P15KE MOSFET P-CH ESD 150V 12A TO-252 Goford Semiconductor	2,308	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	150 V	12A (Tc)	10V	800mOhm @ 6A, 10V	4V @ 250µA	11 nC @ 10 V	±20V	1550 pF @ 75 V	-	60W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252
GT007N04TL N40V,150A,RD<1.5M@10V,VTH1.0V~2. Goford Semiconductor	2,000	-	RFQ	Datasheet	-	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	150A (Tc)	4.5V, 10V	1.5mOhm @ 30A, 10V	2.5V @ 250µA	163 nC @ 10 V	±20V	7363 pF @ 20 V	-	156W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TOLL-8L
G085P02TS P-20V,-8.2A,RD(MAX)<8.5M@-4.5V,V Goford Semiconductor	4,480	-	RFQ	Datasheet	-	8-TSSOP (0.173", 4.40mm Width)	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	20 V	8.2A (Tc)	1.8V, 4.5V	8.5mOhm @ 4.2A, 4.5V	900mV @ 250µA	29 nC @ 10 V	±8V	1255 pF @ 10 V	-	1.05W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-TSSOP
G300P06S P-CH,-60V,-12A,RD(MAX)<30M@-10V, Goford Semiconductor	3,391	-	RFQ	Datasheet	-	8-SOIC (0.154", 3.90mm Width)	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	60 V	12A (Tc)	10V	30mOhm @ 8A, 10V	3V @ 250µA	49 nC @ 10 V	±20V	2719 pF @ 30 V	-	3W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOP
G40P03K P-30V,RD(MAX)<9.5M@-10V,RD(MAX)< Goford Semiconductor	1,375	-	RFQ	Datasheet	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	30 V	40A (Tc)	4.5V, 10V	10mOhm @ 15A, 10V	2.5V @ 250µA	50 nC @ 10 V	±20V	2622 pF @ 15 V	-	78W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252
G130N06S MOSFET, N-CH,60V,9A,RD(MAX)<12M@ Goford Semiconductor	3,990	-	RFQ	Datasheet	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	9A (Tc)	4.5V, 10V	12mOhm @ 10A, 10V	2.5V @ 250µA	67 nC @ 10 V	±20V	3068 pF @ 30 V	-	2.6W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOP
G06N06S N60V,RD(MAX)<22M@10V,RD(MAX)<35M Goford Semiconductor	6,020	-	RFQ	Datasheet	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	8A (Tc)	4.5V, 10V	22mOhm @ 6A, 10V	2.4V @ 250µA	46 nC @ 10 V	±20V	2477 pF @ 30 V	-	2.1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOP

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FETs, MOSFETs FAQ

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Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

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