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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

Parametric Selection Filter options by technical parameters
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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
GT180N12K Goford Semiconductor

GT180N12K

MOSFET N-CH 120V 70A 100W 10M(M

Goford Semiconductor

2,500 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120 V 55A (Tc) 10V 17mOhm @ 20A, 10V 4.5V @ 250µA 25 nC @ 10 V ±20V 1650 pF @ 60 V - 96W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
G45P40T Goford Semiconductor

G45P40T

MOSFET, P-CH, 40V,45A,TO-220

Goford Semiconductor

2,055 -
Datasheet TrenchFET® TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 40 V 45A (Tc) 4.5V, 10V 16mOhm @ 30A, 10V 2.5V @ 250µA 42 nC @ 10 V ±20V 3269 pF @ 20 V - 80W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
G050N03S Goford Semiconductor

G050N03S

N30V, 18A,RD<5M@10V,VTH1.1V~2.4V

Goford Semiconductor

4,000 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Tc) 4.5V, 10V 5mOhm @ 10A, 10V 2.4V @ 250µA 37 nC @ 10 V ±20V 1714 pF @ 15 V - 2.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G18P03S Goford Semiconductor

G18P03S

P-30V,-15A,RD(MAX)<10M@-10V,VTH-

Goford Semiconductor

3,964 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 15A (Tc) 4.5V, 10V 10mOhm @ 10A, 10V 2.5V @ 250µA 58 nC @ 10 V ±20V 3570 pF @ 15 V - 3.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G13P04S Goford Semiconductor

G13P04S

P-40V,-13A,RD(MAX)<15M@-10V,VTH-

Goford Semiconductor

3,580 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 40 V 13A (Tc) 10V 15mOhm @ 12A, 10V 2.5V @ 250µA 40 nC @ 10 V ±20V 3271 pF @ 20 V - 3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G35P04D5 Goford Semiconductor

G35P04D5

P-40V,-35A,RD(MAX)<20M@-4.5V,VTH

Goford Semiconductor

2,497 -
Datasheet TrenchFET® 8-PowerTDFN Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 40 V 35A (Tc) 4.5V, 10V 14mOhm @ 15A, 10V 2.3V @ 250µA 60 nC @ 10 V ±20V 3224 pF @ 20 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
G12P10K Goford Semiconductor

G12P10K

P100V,RD(MAX)<200M@-10V,RD(MAX)<

Goford Semiconductor

544 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 100 V 12A - 200mOhm @ 6A, 10V 3V @ 250µA 33 nC @ 10 V ±20V 1720 pF @ 50 V - 57W -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
G20P06K Goford Semiconductor

G20P06K

P-60V, -20A,RD<45M@-10V,VTH-2V~-

Goford Semiconductor

213 -
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 10V 45mOhm @ 12A, 10V 3.5V @ 250µA 46 nC @ 10 V ±20V 3430 pF @ 30 V - 90W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
GT700P08D3 Goford Semiconductor

GT700P08D3

P-80V,-16A,RD(MAX)<75M@-10V,VTH-

Goford Semiconductor

4,787 -
Datasheet - 8-PowerVDFN Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 80 V 16A (Tc) 10V 75mOhm @ 2A, 10V 3.5V @ 250µA 75 nC @ 10 V ±20V 1591 pF @ 40 V - 69W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
G2K8P15S Goford Semiconductor

G2K8P15S

P-150V,-2.2A,RD(MAX)<310M@-10V,V

Goford Semiconductor

3,678 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 150 V 2.2A (Tc) 10V 310mOhm @ 500mA, 10V 3.5V @ 250µA 11 nC @ 10 V ±20V 966 pF @ 75 V - 2.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
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WINSUN SOURCING SUPPORT

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.