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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

Parametric Selection Filter options by technical parameters
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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
GT060N04T Goford Semiconductor

GT060N04T

MOSFET, N-CH, 40V,60A,TO-220

Goford Semiconductor

126 -
Datasheet SGT TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 40 V 62A (Tc) 4.5V, 10V 6mOhm @ 30A, 10V 2.3V @ 250µA 25 nC @ 10 V ±20V 1280 pF @ 20 V - 70W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
G300P06D5 Goford Semiconductor

G300P06D5

P-60V,-40A,RD(MAX)<30M@-10V,VTH-

Goford Semiconductor

4,878 -
Datasheet TrenchFET® 8-PowerTDFN Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 60 V 40A (Tc) 10V 30mOhm @ 10A, 10V 3V @ 250µA 49 nC @ 10 V ±20V 2705 pF @ 30 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
G60N04K Goford Semiconductor

G60N04K

N40V,RD(MAX)<7M@10V,RD(MAX)<12M@

Goford Semiconductor

4,867 -
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 7mOhm @ 30A, 10V 2.5V @ 250µA 29 nC @ 10 V ±20V 2014 pF @ 20 V - 65W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
60N06 Goford Semiconductor

60N06

N60V,RD(MAX)<17M@10V,RD(MAX)<21M

Goford Semiconductor

2,480 -
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 17mOhm @ 5A, 10V 2V @ 250µA 50 nC @ 10 V ±20V 2315 pF @ 30 V - 69W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
G26P04K Goford Semiconductor

G26P04K

P-40V,RD(MAX)<18M@-10V,RD(MAX)<2

Goford Semiconductor

2,245 -
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 40 V 26A (Tc) 4.5V, 10V 18mOhm @ 10A, 10V 2.5V @ 250µA 42 nC @ 10 V ±20V 2849 pF @ 20 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
18N10 Goford Semiconductor

18N10

N100V,RD(MAX)<53M@10V,RD(MAX)<63

Goford Semiconductor

1,931 -
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 4.5V, 10V 53mOhm @ 10A, 10V 2.5V @ 250µA 26 nC @ 10 V ±20V 2161 pF @ 50 V - 80W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
GT110N06S Goford Semiconductor

GT110N06S

N60V,RD(MAX)<15M@-4.5V,RD(MAX)<1

Goford Semiconductor

3,583 -
Datasheet SGT 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 4.5V, 10V 11mOhm @ 14A, 10V 2.4V @ 250µA 24 nC @ 10 V ±20V 1300 pF @ 25 V - 3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G2K8P15K Goford Semiconductor

G2K8P15K

P-150V,-12A,RD(MAX)<310M@-10V,VT

Goford Semiconductor

2,385 -
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 150 V 12A (Tc) 10V 310mOhm @ 1A, 10V 3.5V @ 250µA 11 nC @ 10 V ±20V 953 pF @ 75 V - 59W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
GT060N04K Goford Semiconductor

GT060N04K

MOSFET, N-CH, 40V,54A,TO-252

Goford Semiconductor

2,304 -
Datasheet SGT TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 40 V 62A (Tc) 4.5V, 10V 5.5mOhm @ 30A, 10V 2.3V @ 250µA 25 nC @ 10 V ±20V 1280 pF @ 20 V - 70W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
18N20J Goford Semiconductor

18N20J

N200V, 18A,RD<0.16@10V,VTH1V~3V,

Goford Semiconductor

130 -
Datasheet TrenchFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 160mOhm @ 9A, 10V 3V @ 250µA 17.7 nC @ 10 V ±30V 836 pF @ 25 V - 65.8W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251
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WINSUN SOURCING SUPPORT

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.