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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

Parametric Selection Filter options by technical parameters
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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
G26P04D5 Goford Semiconductor

G26P04D5

P40V,RD(MAX)<18M@-10V,RD(MAX)<22

Goford Semiconductor

4,995 -
Datasheet TrenchFET® 8-PowerTDFN Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 40 V 26A (Tc) 4.5V, 10V 18mOhm @ 12A, 10V 2.5V @ 250µA 45 nC @ 10 V ±20V 2479 pF @ 20 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
G16P03S Goford Semiconductor

G16P03S

P30V,RD(MAX)<12M@-10V,RD(MAX)<18

Goford Semiconductor

2,234 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 16A (Tc) 4.5V, 10V 12mOhm @ 10A, 10V 2.5V @ 250µA 35 nC @ 10 V ±20V 2800 pF @ 15 V - 3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G16P03D3 Goford Semiconductor

G16P03D3

P30V,RD(MAX)<12M@-10V,RD(MAX)<18

Goford Semiconductor

9,433 -
Datasheet TrenchFET® 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 45A (Tc) 4.5V, 10V 12mOhm @ 10A, 10V 2.5V @ 250µA 35 nC @ 10 V ±20V 2805 pF @ 15 V - 55W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
G50N03D5 Goford Semiconductor

G50N03D5

N30V,RD(MAX)<4.5M@10V,RD(MAX)<8M

Goford Semiconductor

4,998 -
Datasheet TrenchFET® 8-PowerTDFN Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 4.5mOhm @ 20A, 10V 2.4V @ 250µA 38.4 nC @ 10 V ±20V 1661 pF @ 15 V - 25.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
G48N03D3 Goford Semiconductor

G48N03D3

N30V,RD(MAX)<6M@10V,RD(MAX)<8M@4

Goford Semiconductor

4,925 -
Datasheet TrenchFET® 8-PowerVDFN Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 4mOhm @ 20A, 10V 2.4V @ 250µA 38 nC @ 10 V ±20V 1692 pF @ 15 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
G45P02D3 Goford Semiconductor

G45P02D3

P20V,RD(MAX)<9.5M@-4.5V,RD(MAX)<

Goford Semiconductor

4,866 -
Datasheet TrenchFET® 8-PowerVDFN Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 20 V 45A (Tc) 2.5V, 4.5V 7.5mOhm @ 10A, 4.5V 1V @ 250µA 44 nC @ 4.5 V ±12V 4867 pF @ 10 V - 29W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
G30N02T Goford Semiconductor

G30N02T

MOSFET N-CH 20V 30A TO-220

Goford Semiconductor

118 -
Datasheet TrenchFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 20 V 30A (Tc) 4.5V 13mOhm @ 20A, 4.5V 1.2V @ 250µA 15 nC @ 10 V ±12V 900 pF @ 10 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
GT060N04D5 Goford Semiconductor

GT060N04D5

N40V,120A,RD<2.8M@10V,VTH1.0V~2.

Goford Semiconductor

4,870 -
Datasheet - 8-PowerTDFN Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 40 V 62A (Tc) 4.5V, 10V 5.5mOhm @ 30A, 10V 2.3V @ 250µA 44 nC @ 10 V ±20V 1276 pF @ 20 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
GT130N10K Goford Semiconductor

GT130N10K

MOSFET N-CH 100V 60A 73.5W TO-2

Goford Semiconductor

2,444 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 10V 12mOhm @ 20A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 1215 pF @ 50 V - 73.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
G080N06K Goford Semiconductor

G080N06K

MOSFET N-CH 60V 80A 110W TO-252

Goford Semiconductor

2,384 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 8mOhm @ 20A, 10V 4V @ 250µA 77 nC @ 10 V ±20V 3408 pF @ 30 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
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WINSUN SOURCING SUPPORT

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.