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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SIHB21N80AE-GE3 Vishay Siliconix

SIHB21N80AE-GE3

MOSFET N-CH 800V 17.4A D2PAK

Vishay Siliconix

905 -
Datasheet E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 800 V 17.4A (Tc) 10V 235mOhm @ 11A, 10V 4V @ 250µA 72 nC @ 10 V ±30V 1388 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SI7108DN-T1-GE3 Vishay Siliconix

SI7108DN-T1-GE3

MOSFET N-CH 20V 14A PPAK1212-8

Vishay Siliconix

5,905 -
Datasheet TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 14A (Ta) 4.5V, 10V 4.9mOhm @ 22A, 10V 2V @ 250µA 30 nC @ 4.5 V ±16V - - 1.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
IRFI9630GPBF Vishay Siliconix

IRFI9630GPBF

MOSFET P-CH 200V 4.3A TO220-3

Vishay Siliconix

2,020 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Active P-Channel MOSFET (Metal Oxide) 200 V 4.3A (Tc) 10V 800mOhm @ 2.6A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 700 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
SQJ461EP-T2_GE3 Vishay Siliconix

SQJ461EP-T2_GE3

P-CHANNEL 60-V (D-S) 175C MOSFET

Vishay Siliconix

5,870 -
Datasheet - PowerPAK® SO-8 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4.5V, 10V 16mOhm @ 14.4A, 10V 2.5V @ 250µA 140 nC @ 10 V ±20V 4710 pF @ 30 V - 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SO-8
IRF9510SPBF Vishay Siliconix

IRF9510SPBF

MOSFET P-CH 100V 4A D2PAK

Vishay Siliconix

946 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active P-Channel MOSFET (Metal Oxide) 100 V 4A (Tc) 10V 1.2Ohm @ 2.4A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount -
SIR104ADP-T1-RE3 Vishay Siliconix

SIR104ADP-T1-RE3

MOSFET N-CH 100V 18.8A/81A PPAK

Vishay Siliconix

5,937 -
Datasheet TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 18.8A (Ta), 81A (Tc) 7.5V, 10V 6.1mOhm @ 15A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 3250 pF @ 50 V - 5.4W (Ta), 100W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SIDR638DP-T1-GE3 Vishay Siliconix

SIDR638DP-T1-GE3

MOSFET N-CH 40V 100A PPAK SO-8DC

Vishay Siliconix

4,599 -
Datasheet TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 0.88mOhm @ 20A, 10V 2.3V @ 250µA 204 nC @ 10 V +20V, -16V 10500 pF @ 20 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8DC
SIHA21N80AEF-GE3 Vishay Siliconix

SIHA21N80AEF-GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix

991 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 250mOhm @ 8.5A, 10V 4V @ 250µA 71 nC @ 10 V ±30V 1511 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
SI7634BDP-T1-GE3 Vishay Siliconix

SI7634BDP-T1-GE3

MOSFET N-CH 30V 40A PPAK SO-8

Vishay Siliconix

704 -
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 5.4mOhm @ 15A, 10V 2.6V @ 250µA 68 nC @ 10 V ±20V 3150 pF @ 15 V - 5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SIHD6N80E-GE3 Vishay Siliconix

SIHD6N80E-GE3

MOSFET N-CH 800V 5.4A DPAK

Vishay Siliconix

1,994 -
Datasheet E TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 800 V 5.4A (Tc) 10V 940mOhm @ 3A, 10V 4V @ 250µA 44 nC @ 10 V ±30V 827 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
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WINSUN SOURCING SUPPORT

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.