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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRFR9220TRLPBF Vishay Siliconix

IRFR9220TRLPBF

MOSFET P-CH 200V 3.6A DPAK

Vishay Siliconix

2,455 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 200 V 3.6A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 340 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
IRFIBE30GPBF Vishay Siliconix

IRFIBE30GPBF

MOSFET N-CH 800V 2.1A TO220-3

Vishay Siliconix

1,824 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 800 V 2.1A (Tc) 10V 3Ohm @ 1.3A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
IRF830STRLPBF Vishay Siliconix

IRF830STRLPBF

MOSFET N-CH 500V 4.5A D2PAK

Vishay Siliconix

650 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 1.5Ohm @ 2.7A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 610 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRF840LCLPBF Vishay Siliconix

IRF840LCLPBF

MOSFET N-CH 500V 8A I2PAK

Vishay Siliconix

1,965 -
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole I2PAK
SIDR390DP-T1-GE3 Vishay Siliconix

SIDR390DP-T1-GE3

MOSFET N-CH 30V 69.9A/100A PPAK

Vishay Siliconix

7,487 -
Datasheet TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 69.9A (Ta), 100A (Tc) 4.5V, 10V 0.8mOhm @ 20A, 10V 2V @ 250µA 153 nC @ 10 V +20V, -16V 10180 pF @ 15 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8DC
SIDR402EP-T1-RE3 Vishay Siliconix

SIDR402EP-T1-RE3

N-CHANNEL 40 V (D-S) 175C MOSFET

Vishay Siliconix

5,930 -
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 65.2A (Ta), 291A (Tc) 4.5V, 10V 0.88mOhm @ 20A, 10V 2.3V @ 250µA 165 nC @ 10 V +20V, -16V 9100 pF @ 20 V - 7.5W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SO-8DC
SIR846DP-T1-GE3 Vishay Siliconix

SIR846DP-T1-GE3

MOSFET N-CH 100V 60A PPAK SO-8

Vishay Siliconix

1,980 -
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 7.5V, 10V 7.8mOhm @ 20A, 10V 3.5V @ 250µA 72 nC @ 10 V ±20V 2870 pF @ 50 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SIHA12N60E-E3 Vishay Siliconix

SIHA12N60E-E3

MOSFET N-CH 600V 12A TO220

Vishay Siliconix

923 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 937 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
SIHD186N60EF-GE3 Vishay Siliconix

SIHD186N60EF-GE3

MOSFET N-CH 600V 19A DPAK

Vishay Siliconix

6,140 -
Datasheet EF TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 201mOhm @ 9.5A, 10V 5V @ 250µA 32 nC @ 10 V ±30V 1118 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
SI4368DY-T1-E3 Vishay Siliconix

SI4368DY-T1-E3

MOSFET N-CH 30V 17A 8SO

Vishay Siliconix

1,110 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta) 4.5V, 10V 3.2mOhm @ 25A, 10V 1.8V @ 250µA 80 nC @ 4.5 V ±12V 8340 pF @ 15 V - 1.6W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
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WINSUN SOURCING SUPPORT

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.