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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SIHF12N65E-GE3 Vishay Siliconix

SIHF12N65E-GE3

MOSFET N-CH 650V 12A TO220

Vishay Siliconix

993 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 70 nC @ 10 V ±30V 1224 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
IRF840ASTRLPBF Vishay Siliconix

IRF840ASTRLPBF

MOSFET N-CH 500V 8A D2PAK

Vishay Siliconix

675 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1018 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIDR104ADP-T1-RE3 Vishay Siliconix

SIDR104ADP-T1-RE3

MOSFET N-CH 100V 18.8A/81A PPAK

Vishay Siliconix

5,920 -
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 18.8A (Ta), 81A (Tc) 7.5V, 10V 6.1mOhm @ 15A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 3250 pF @ 50 V - 5.4W (Ta), 100W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8DC
SIHA15N80AE-GE3 Vishay Siliconix

SIHA15N80AE-GE3

MOSFET N-CH 800V 6A TO220

Vishay Siliconix

973 -
Datasheet E TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 350mOhm @ 7.5A, 10V 4V @ 250µA 53 nC @ 10 V ±30V 1093 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
SIDR608EP-T1-RE3 Vishay Siliconix

SIDR608EP-T1-RE3

N-CHANNEL 45 V (D-S) 175C MOSFET

Vishay Siliconix

5,990 -
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 45 V 56A (Ta), 228A (Tc) 4.5V, 10V 1.2mOhm @ 20A, 10V 2.3V @ 250µA 167 nC @ 10 V +20V, -16V 8900 pF @ 20 V - 7.5W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SO-8DC
SIDR140DP-T1-RE3 Vishay Siliconix

SIDR140DP-T1-RE3

N-CHANNEL 25-V (D-S) MOSFET

Vishay Siliconix

2,998 -
Datasheet TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 79A (Ta), 100A (Tc) 4.5V, 10V 0.67mOhm @ 20A, 10V 2.1V @ 250µA 170 nC @ 10 V +20V, -16V 8150 pF @ 10 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8DC
SIHP12N60E-BE3 Vishay Siliconix

SIHP12N60E-BE3

MOSFET N-CH 600V 12A TO220AB

Vishay Siliconix

346 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) - 380mOhm @ 6A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 937 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SQJQ148ER-T1_GE3 Vishay Siliconix

SQJQ148ER-T1_GE3

AUTOMOTIVE N-CHANNEL 40 V (D-S)

Vishay Siliconix

1,641 -
Datasheet TrenchFET® Gen IV PowerPAK® 8 x 8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 372A (Tc) 10V 1.5mOhm @ 20A, 10V 3.5V @ 250µA 102 nC @ 10 V ±20V 5750 pF @ 25 V - 394W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® 8 x 8
IRFIBC20GPBF Vishay Siliconix

IRFIBC20GPBF

MOSFET N-CH 600V 1.7A TO220-3

Vishay Siliconix

1,045 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 600 V 1.7A (Tc) 10V 4.4Ohm @ 1A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
SIHG11N80AE-GE3 Vishay Siliconix

SIHG11N80AE-GE3

MOSFET N-CH 800V 8A TO247AC

Vishay Siliconix

480 -
Datasheet E TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 450mOhm @ 5.5A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 804 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
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WINSUN SOURCING SUPPORT

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.