FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IRFI730GPBF MOSFET N-CH 400V 3.7A TO220-3 Vishay Siliconix	1,105	-	RFQ	Datasheet	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	N-Channel	MOSFET (Metal Oxide)	400 V	3.7A (Tc)	10V	1Ohm @ 2.1A, 10V	4V @ 250µA	38 nC @ 10 V	±20V	700 pF @ 25 V	-	35W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
IRF9520STRLPBF MOSFET P-CH 100V 6.8A D2PAK Vishay Siliconix	1,368	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	100 V	6.8A (Tc)	10V	600mOhm @ 4.1A, 10V	4V @ 250µA	18 nC @ 10 V	±20V	390 pF @ 25 V	-	3.7W (Ta), 60W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
SIR140DP-T1-RE3 MOSFET N-CH 25V 71.9A/100A PPAK Vishay Siliconix	11,100	-	RFQ	Datasheet	TrenchFET® Gen IV	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	25 V	71.9A (Ta), 100A (Tc)	4.5V, 10V	0.67mOhm @ 20A, 10V	2.1V @ 250µA	170 nC @ 10 V	+20V, -16V	8150 pF @ 10 V	-	6.25W (Ta), 104W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8
SUD35N10-26P-BE3 MOSFET N-CH 100V 12A/35A DPAK Vishay Siliconix	1,504	-	RFQ	Datasheet	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	12A (Ta), 35A (Tc)	7V, 10V	26mOhm @ 12A, 10V	4.4V @ 250µA	47 nC @ 10 V	±20V	2000 pF @ 12 V	-	8.3W (Ta), 83W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA
IRFBC40PBF-BE3 MOSFET N-CH 600V 6.2A TO220AB Vishay Siliconix	1,018	-	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	6.2A (Tc)	-	1.2Ohm @ 3.7A, 10V	4V @ 250µA	60 nC @ 10 V	±20V	1300 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB
SIHJ8N60E-T1-GE3 MOSFET N-CH 600V 8A PPAK SO-8 Vishay Siliconix	2,881	-	RFQ	Datasheet	-	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	8A (Tc)	10V	520mOhm @ 4A, 10V	4V @ 250µA	44 nC @ 10 V	±30V	754 pF @ 100 V	-	89W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8
IRFBC30ASPBF MOSFET N-CH 600V 3.6A D2PAK Vishay Siliconix	2,169	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	3.6A (Tc)	10V	2.2Ohm @ 2.2A, 10V	4.5V @ 250µA	23 nC @ 10 V	±30V	510 pF @ 25 V	-	74W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
SQJQ150E-T1_GE3 AUTOMOTIVE N-CHANNEL 40 V (D-S) Vishay Siliconix	1,960	-	RFQ	Datasheet	TrenchFET®	PowerPAK® 8 x 8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	233A (Tc)	10V	1.9mOhm @ 20A, 10V	3.5V @ 250µA	92 nC @ 10 V	±20V	4643 pF @ 25 V	-	187W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® 8 x 8
IRF830SPBF MOSFET N-CH 500V 4.5A D2PAK Vishay Siliconix	1,078	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	4.5A (Tc)	10V	1.5Ohm @ 2.7A, 10V	4V @ 250µA	38 nC @ 10 V	±20V	610 pF @ 25 V	-	3.1W (Ta), 74W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
SIDR638DP-T1-RE3 N-CHANNEL 40-V (D-S) MOSFET Vishay Siliconix	12,000	-	RFQ	Datasheet	TrenchFET® Gen IV	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	64.6A (Ta), 100A (Tc)	4.5V, 10V	0.88mOhm @ 20A, 10V	2.3V @ 250µA	204 nC @ 10 V	+20V, -16V	10500 pF @ 20 V	-	6.25W (Ta), 125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8DC

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FETs, MOSFETs FAQ

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