FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IRF723 N-CHANNEL POWER MOSFET Harris Corporation	77,397	-	RFQ	Datasheet	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	350 V	2.8A (Tc)	10V	2.5Ohm @ 1.8A, 10V	4V @ 250µA	20 nC @ 10 V	±20V	360 pF @ 25 V	-	50W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
IRFD9123 MOSFET P-CH 100V 1A 4DIP Harris Corporation	15,501	-	RFQ	Datasheet	-	4-DIP (0.300", 7.62mm)	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	100 V	1A (Ta)	-	600mOhm @ 600mA, 10V	4V @ 250µA	18 nC @ 10 V	-	390 pF @ 25 V	-	-	-	-	-	Through Hole	4-HVMDIP
IRF631 N-CHANNEL POWER MOSFET Harris Corporation	5,221	-	RFQ	Datasheet	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	150 V	9A (Tc)	10V	400mOhm @ 5A, 10V	4V @ 250µA	30 nC @ 10 V	±20V	600 pF @ 25 V	-	75W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB
RF1S22N10SM N-CHANNEL POWER MOSFET Harris Corporation	3,853	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	100 V	22A	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	TO-263AB
IRF740S2515 10A, 400V, 0.55OHM, N-CHANNEL, P Harris Corporation	2,200	-	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
HUF76129P3 N-CHANNEL POWER MOSFET Harris Corporation	23,975	-	RFQ	Datasheet	UltraFET™	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	56A (Tc)	4.5V, 10V	16mOhm @ 56A, 10V	3V @ 250µA	45 nC @ 10 V	±20V	1350 pF @ 25 V	-	105W (Tc)	-40°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB
HUF75333P3 MOSFET N-CH 55V 66A TO220-3 Harris Corporation	2,197	-	RFQ	Datasheet	UltraFET™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	66A (Tc)	-	16mOhm @ 66A, 10V	4V @ 250µA	85 nC @ 20 V	±20V	1300 pF @ 25 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3
IRF9522 P-CHANNEL POWER MOSFET Harris Corporation	1,768	-	RFQ	Datasheet	-	TO-220-3	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	100 V	5A (Tc)	10V	800mOhm @ 3.5A, 10V	4V @ 250µA	22 nC @ 10 V	±20V	300 pF @ 25 V	-	40W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB
RLD03N06CLESM N-CHANNEL POWER MOSFET Harris Corporation	1,025	-	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF630 MOSFET N-CH 200V 9A TO220AB Harris Corporation	11,535	-	RFQ	Datasheet	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	9A (Tc)	-	400mOhm @ 5.4A, 10V	4V @ 250µA	43 nC @ 10 V	-	800 pF @ 25 V	-	-	-	-	-	Through Hole	TO-220AB

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.