FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IRFD210 0.6A 200V 1.500 OHM N-CHANNEL Harris Corporation	1,014	-	RFQ	Datasheet	-	4-DIP (0.300", 7.62mm)	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	200 V	600mA (Ta)	10V	1.5Ohm @ 360mA, 10V	4V @ 250µA	8.2 nC @ 10 V	±20V	140 pF @ 25 V	-	1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Through Hole	4-DIP, Hexdip, HVMDIP
IRFD9120 MOSFET P-CH 100V 1A 4DIP Harris Corporation	40,822	-	RFQ	Datasheet	-	4-DIP (0.300", 7.62mm)	Bulk	Obsolete	P-Channel	MOSFET (Metal Oxide)	100 V	1A (Ta)	10V	600mOhm @ 600mA, 10V	4V @ 250µA	18 nC @ 10 V	±20V	390 pF @ 25 V	-	1.3W (Ta)	-55°C ~ 175°C (TJ)	-	-	Through Hole	4-HVMDIP
RFP50N05 N-CHANNEL POWER MOSFET Harris Corporation	22,264	-	RFQ	Datasheet	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	50 V	50A (Tc)	10V	22mOhm @ 50A, 10V	4V @ 250nA	160 nC @ 20 V	±20V	-	-	132W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
RFD8P05SM9A P-CHANNEL POWER MOSFET Harris Corporation	3,171	-	RFQ	Datasheet	-	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
HUF75339P3 MOSFET N-CH 55V 75A TO220-3 Harris Corporation	13,980	-	RFQ	Datasheet	UltraFET™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	75A (Tc)	10V	12mOhm @ 75A, 10V	4V @ 250µA	130 nC @ 20 V	±20V	2000 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3
RF1S45N06LESM9A N-CHANNEL POWER MOSFET Harris Corporation	1,600	-	RFQ	Datasheet	-	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF9520 MOSFET P-CH 100V 6A TO220AB Harris Corporation	6,668	-	RFQ	Datasheet	-	TO-220-3	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	100 V	6A (Tc)	-	600mOhm @ 3.5A, 10V	4V @ 250µA	22 nC @ 10 V	±20V	300 pF @ 25 V	-	40W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB
HRF3205L 100A 55V 0.008 OHM N-CHANNEL Harris Corporation	2,210	-	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	55 V	100A (Tc)	10V	8mOhm @ 59A, 10V	4V @ 250µA	170 nC @ 10 V	±20V	4000 pF @ 25 V	-	175W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262 (I2PAK)
RFM3N45 N-CHANNEL POWER MOSFET Harris Corporation	1,840	-	RFQ	Datasheet	-	TO-204AA, TO-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	450 V	3A (Tc)	10V	3Ohm @ 1.5A, 10V	4V @ 1mA	-	±20V	750 pF @ 25 V	-	75W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-3
RF1S45N06LE 45A, 60V, 0.028OHM, N-CHANNEL, Harris Corporation	1,530	-	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	45A (Tc)	5V	28mOhm @ 45A, 5V	2V @ 250µA	135 nC @ 10 V	±10V	2150 pF @ 25 V	-	142W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262 (I2PAK)

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.