FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
BUZ71 N-CHANNEL POWER MOSFET Harris Corporation	14,750	-	RFQ	Datasheet	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	50 V	14A (Tc)	10V	100mOhm @ 9A, 10V	4V @ 1mA	-	±20V	650 pF @ 25 V	-	40W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
RFD10N05SM 10A, 50V, N-CHANNEL, Harris Corporation	11,858	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	50 V	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	TO-252 (DPAK)
RFP2N15 N-CHANNEL, MOSFET Harris Corporation	2,411	-	RFQ	Datasheet	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	150 V	2A (Tc)	10V	1.75Ohm @ 2A, 10V	4V @ 250µA	-	±20V	200 pF @ 25 V	-	25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
RFP50N06R4034 50A, 60V, 0.022 OHM, N-CHANNEL Harris Corporation	2,400	-	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFD113 MOSFET N-CH 60V 800MA 4DIP Harris Corporation	46,955	-	RFQ	Datasheet	-	4-DIP (0.300", 7.62mm)	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	800mA (Tc)	10V	800mOhm @ 800mA, 10V	4V @ 250µA	7 nC @ 10 V	±20V	200 pF @ 25 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	4-HVMDIP
RF1S25N06SM9A N-CHANNEL POWER MOSFET Harris Corporation	4,000	-	RFQ	Datasheet	-	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RFP45N06LE N-CHANNEL POWER MOSFET Harris Corporation	1,569	-	RFQ	Datasheet	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	45A (Tc)	5V	28mOhm @ 45A, 5V	2V @ 250µA	135 nC @ 10 V	±10V	2150 pF @ 25 V	-	142W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220
RF1S23N06LE 23A, 60V, 0.065OHM, N-CHANNEL, Harris Corporation	2,400	-	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	23A (Tc)	5V	65mOhm @ 23A, 5V	2V @ 250µA	48 nC @ 10 V	±10V	850 pF @ 25 V	-	75W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	I2PAK (TO-262)
RFP45N03L N-CHANNEL POWER MOSFET Harris Corporation	41,855	-	RFQ	Datasheet	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	45A (Tc)	5V	22mOhm @ 45A, 5V	2V @ 250µA	60 nC @ 10 V	±10V	1650 pF @ 25 V	-	90W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3
IRF9532 P-CHANNEL POWER MOSFET Harris Corporation	19,101	-	RFQ	Datasheet	-	TO-220-3	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	100 V	10A (Tc)	10V	400mOhm @ 6.5A, 10V	4V @ 250µA	45 nC @ 10 V	±20V	500 pF @ 25 V	-	75W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.