FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
TPH3R203NL,L1Q MOSFET N-CH 30V 47A 8SOP Toshiba Semiconductor and Storage	4,990	-	RFQ	Datasheet	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	47A (Tc)	4.5V, 10V	3.2mOhm @ 23.5A, 10V	2.3V @ 300µA	21 nC @ 10 V	±20V	2100 pF @ 15 V	-	1.6W (Ta), 44W (Tc)	150°C (TJ)	-	-	Surface Mount	8-SOP Advance (5x5)
TK6P65W,RQ MOSFET N-CH 650V 5.8A DPAK Toshiba Semiconductor and Storage	2,008	-	RFQ	Datasheet	DTMOSIV	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	5.8A (Ta)	10V	1.05Ohm @ 2.9A, 10V	3.5V @ 180µA	11 nC @ 10 V	±30V	390 pF @ 300 V	-	60W (Tc)	150°C (TJ)	-	-	Surface Mount	DPAK
TK33S10N1Z,LXHQ MOSFET N-CH 100V 33A DPAK Toshiba Semiconductor and Storage	3,964	-	RFQ	Datasheet	U-MOSVIII-H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	33A (Ta)	10V	9.7mOhm @ 16.5A, 10V	4V @ 500µA	28 nC @ 10 V	±20V	2050 pF @ 10 V	-	125W (Tc)	175°C	-	-	Surface Mount	DPAK+
TPH1R204PL,L1Q MOSFET N-CH 40V 150A 8SOP Toshiba Semiconductor and Storage	4,414	-	RFQ	Datasheet	U-MOSIX-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	150A (Tc)	4.5V, 10V	1.24mOhm @ 50A, 10V	2.4V @ 500µA	74 nC @ 10 V	±20V	7200 pF @ 20 V	-	960mW (Ta), 132W (Tc)	175°C (TJ)	-	-	Surface Mount	8-SOP Advance (5x5)
TJ80S04M3L,LXHQ MOSFET P-CH 40V 80A DPAK Toshiba Semiconductor and Storage	5,473	-	RFQ	Datasheet	U-MOSVI	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	40 V	80A (Ta)	6V, 10V	5.2mOhm @ 40A, 10V	3V @ 1mA	158 nC @ 10 V	+10V, -20V	7770 pF @ 10 V	-	100W (Tc)	175°C	-	-	Surface Mount	DPAK+
TK55S10N1,LXHQ MOSFET N-CH 100V 55A DPAK Toshiba Semiconductor and Storage	8,842	-	RFQ	Datasheet	U-MOSVIII-H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	55A (Ta)	10V	6.5mOhm @ 27.5A, 10V	4V @ 500µA	49 nC @ 10 V	±20V	3280 pF @ 10 V	-	157W (Tc)	175°C	-	-	Surface Mount	DPAK+
TK7P65W,RQ MOSFET N-CH 650V 6.8A DPAK Toshiba Semiconductor and Storage	908	-	RFQ	Datasheet	DTMOSIV	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	6.8A (Ta)	10V	800mOhm @ 3.4A, 10V	3.5V @ 250µA	15 nC @ 10 V	±30V	490 pF @ 300 V	-	60W (Tc)	150°C (TJ)	-	-	Surface Mount	DPAK
TK65S04N1L,LQ MOSFET N-CH 40V 65A DPAK Toshiba Semiconductor and Storage	3,964	-	RFQ	Datasheet	U-MOSVIII-H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	65A (Ta)	10V	4.3mOhm @ 32.5A, 10V	2.5V @ 300µA	39 nC @ 10 V	±20V	2550 pF @ 10 V	-	107W (Tc)	175°C (TJ)	-	-	Surface Mount	DPAK+
XPH4R10ANB,L1XHQ MOSFET N-CH 100V 70A 8SOP Toshiba Semiconductor and Storage	34,035	-	RFQ	Datasheet	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	70A (Ta)	6V, 10V	4.1mOhm @ 35A, 10V	3.5V @ 1mA	75 nC @ 10 V	±20V	4970 pF @ 10 V	-	960mW (Ta), 170W (Tc)	175°C	-	-	Surface Mount	8-SOP Advance (5x5)
TK60F10N1L,LXGQ MOSFET N-CH 100V 60A TO220SM Toshiba Semiconductor and Storage	1,750	-	RFQ	Datasheet	U-MOSVIII-H	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	60A (Ta)	6V, 10V	6.11mOhm @ 30A, 10V	3.5V @ 500µA	60 nC @ 10 V	±20V	4320 pF @ 10 V	-	205W (Tc)	175°C	-	-	Surface Mount	TO-220SM(W)

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FETs, MOSFETs FAQ

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Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

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