FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
TW015N120C,S1F G3 1200V SIC-MOSFET TO-247 15MO Toshiba Semiconductor and Storage	30	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	100A (Tc)	18V	20mOhm @ 50A, 18V	5V @ 11.7mA	158 nC @ 18 V	+25V, -10V	6000 pF @ 800 V	-	431W (Tc)	175°C	-	-	Through Hole	TO-247
SSM3K37CT,L3F MOSFET N-CH 20V 200MA CST3 Toshiba Semiconductor and Storage	8,794	-	RFQ	Datasheet	U-MOSIII	SC-101, SOT-883	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20 V	200mA (Ta)	1.5V, 4.5V	2.2Ohm @ 100mA, 4.5V	1V @ 1mA	-	±10V	12 pF @ 10 V	-	100mW (Ta)	150°C (TJ)	-	-	Surface Mount	CST3
SSM3K35CT,L3F MOSFET N-CH 20V 180MA CST3 Toshiba Semiconductor and Storage	32,987	-	RFQ	Datasheet	-	SC-101, SOT-883	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20 V	180mA (Ta)	1.2V, 4V	3Ohm @ 50mA, 4V	1V @ 1mA	-	±10V	9.5 pF @ 3 V	-	100mW (Ta)	150°C	-	-	Surface Mount	CST3
SSM3J35CT,L3F MOSFET P-CHANNEL 20V 100MA CST3 Toshiba Semiconductor and Storage	6,186	-	RFQ	Datasheet	π-MOSVI	SC-101, SOT-883	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	20 V	100mA (Ta)	1.2V, 4V	8Ohm @ 50mA, 4V	1V @ 1mA	-	±10V	12.2 pF @ 3 V	-	100mW (Ta)	150°C	-	-	Surface Mount	CST3
SSM3K7002KF,LXHF SMOS NCH I: 0.4A, V: 60V, P: 270 Toshiba Semiconductor and Storage	17,109	-	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	400mA (Ta)	4.5V, 10V	1.5Ohm @ 100mA, 10V	2.1V @ 250µA	0.6 nC @ 4.5 V	±20V	40 pF @ 10 V	-	270mW (Ta)	150°C	Automotive	AEC-Q101	Surface Mount	S-Mini
SSM3J145TU,LF MOSFET P-CH 20V 3A UFM Toshiba Semiconductor and Storage	9,968	-	RFQ	Datasheet	U-MOSVI	3-SMD, Flat Leads	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	20 V	3A (Ta)	1.5V, 4.5V	103mOhm @ 1A, 4.5V	1V @ 1mA	4.6 nC @ 4.5 V	+6V, -8V	270 pF @ 10 V	-	500mW (Ta)	150°C	-	-	Surface Mount	UFM
SSM6J50TU,LF MOSFET P-CH 20V 2.5A UF6 Toshiba Semiconductor and Storage	5,998	-	RFQ	Datasheet	U-MOSIV	6-SMD, Flat Leads	Tape & Reel (TR)	Last Time Buy	P-Channel	MOSFET (Metal Oxide)	20 V	2.5A (Ta)	2V, 4.5V	64mOhm @ 1.5A, 4.5V	1.2V @ 200µA	-	±10V	800 pF @ 10 V	-	500mW (Ta)	150°C	-	-	Surface Mount	UF6
SSM3J371R,LXHF SMOS P-CH VDSS:-20V VGSS:-8/+6V Toshiba Semiconductor and Storage	12,597	-	RFQ	Datasheet	U-MOSVI	SOT-23-3 Flat Leads	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	20 V	4A (Ta)	1.5V, 4.5V	55mOhm @ 3A, 4.5V	1V @ 1mA	10.4 nC @ 4.5 V	+6V, -8V	630 pF @ 10 V	-	1W (Ta)	150°C	Automotive	AEC-Q101	Surface Mount	SOT-23F
SSM6J402TU,LF MOSFET P-CH 30V 2A UF6 Toshiba Semiconductor and Storage	6,176	-	RFQ	Datasheet	-	6-SMD, Flat Leads	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	30 V	2A (Ta)	4V, 10V	117mOhm @ 1A, 10V	2.6V @ 1mA	5.3 nC @ 10 V	±20V	280 pF @ 15 V	-	500mW (Ta)	150°C	-	-	Surface Mount	UF6
SSM6K407TU,LF MOSFET N-CH 60V 2A UF6 Toshiba Semiconductor and Storage	2,926	-	RFQ	Datasheet	-	6-SMD, Flat Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	2A (Ta)	4V, 10V	300mOhm @ 1A, 10V	2V @ 1mA	6 nC @ 10 V	±20V	150 pF @ 10 V	-	500mW (Ta)	150°C	-	-	Surface Mount	UF6

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

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Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

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