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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Stock & Datasheets Review availability and technical references
RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK190E65Z,S1X Toshiba Semiconductor and Storage

TK190E65Z,S1X

650V DTMOS VI TO-220 190MOHM

Toshiba Semiconductor and Storage

113 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Ta) 10V 190mOhm @ 7.5A, 10V 4V @ 610µA 25 nC @ 10 V ±30V 1370 pF @ 300 V - 130W (Tc) 150°C - - Through Hole TO-220
TK190U65Z,RQ Toshiba Semiconductor and Storage

TK190U65Z,RQ

DTMOS VI TOLL PD=130W F=1MHZ

Toshiba Semiconductor and Storage

1,022 -
Datasheet DTMOSVI 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Ta) 10V 190mOhm @ 7.5A, 10V 4V @ 610µA 25 nC @ 10 V ±30V 1370 pF @ 300 V - 130W (Tc) 150°C - - Surface Mount TOLL
TK200F04N1L,LXGQ Toshiba Semiconductor and Storage

TK200F04N1L,LXGQ

MOSFET N-CH 40V 200A TO220SM

Toshiba Semiconductor and Storage

1,016 -
Datasheet U-MOSVIII-H TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Ta) 6V, 10V 0.9mOhm @ 100A, 10V 3V @ 1mA 214 nC @ 10 V ±20V 14920 pF @ 10 V - 375W (Tc) 175°C - - Surface Mount TO-220SM(W)
TK160F10N1L,LXGQ Toshiba Semiconductor and Storage

TK160F10N1L,LXGQ

MOSFET N-CH 100V 160A TO220SM

Toshiba Semiconductor and Storage

5,719 -
Datasheet U-MOSVIII-H TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 160A (Ta) 6V, 10V 2.4mOhm @ 80A, 10V 3.5V @ 1mA 122 nC @ 10 V ±20V 10100 pF @ 10 V - 375W (Tc) 175°C - - Surface Mount TO-220SM(W)
XK1R9F10QB,LXGQ Toshiba Semiconductor and Storage

XK1R9F10QB,LXGQ

MOSFET N-CH 100V 160A TO220SM

Toshiba Semiconductor and Storage

4,329 -
Datasheet U-MOSX-H TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 160A (Ta) 6V, 10V 1.92mOhm @ 80A, 10V 3.5V @ 1mA 184 nC @ 10 V ±20V 11500 pF @ 10 V - 375W (Tc) 175°C - - Surface Mount TO-220SM(W)
TK22A65X5,S5X Toshiba Semiconductor and Storage

TK22A65X5,S5X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

150 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Ta) 10V 160mOhm @ 11A, 10V 4.5V @ 1.1mA 50 nC @ 10 V ±30V 2400 pF @ 300 V - 45W (Tc) 150°C - - Through Hole TO-220SIS
TK110U65Z,RQ Toshiba Semiconductor and Storage

TK110U65Z,RQ

DTMOS VI TOLL PD=190W F=1MHZ

Toshiba Semiconductor and Storage

5,960 -
Datasheet DTMOSVI 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Ta) 10V 110mOhm @ 12A, 10V 4V @ 1.02mA 40 nC @ 10 V ±30V 2250 pF @ 300 V - 190W (Tc) 150°C - - Surface Mount TOLL
TKR74F04PB,LXGQ Toshiba Semiconductor and Storage

TKR74F04PB,LXGQ

MOSFET N-CH 40V 250A TO220SM

Toshiba Semiconductor and Storage

4,284 -
Datasheet U-MOSIX-H TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 250A (Ta) 6V, 10V 0.74mOhm @ 125A, 10V 3V @ 1mA 227 nC @ 10 V ±20V 14200 pF @ 10 V - 375W (Tc) 175°C - - Surface Mount TO-220SM(W)
TK125V65Z,LQ Toshiba Semiconductor and Storage

TK125V65Z,LQ

MOSFET N-CH 650V 24A 5DFN

Toshiba Semiconductor and Storage

10,000 -
Datasheet DTMOSVI 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Ta) 10V 125mOhm @ 12A, 10V 4V @ 1.02mA 40 nC @ 10 V ±30V 2250 pF @ 300 V - 190W (Tc) 150°C - - Surface Mount 4-DFN-EP (8x8)
TK099V65Z,LQ Toshiba Semiconductor and Storage

TK099V65Z,LQ

MOSFET N-CH 650V 30A 5DFN

Toshiba Semiconductor and Storage

12,407 -
Datasheet DTMOSVI 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Ta) 10V 99mOhm @ 15A, 10V 4V @ 1.27mA 47 nC @ 10 V ±30V 2780 pF @ 300 V - 230W (Tc) 150°C - - Surface Mount 5-DFN (8x8)
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.