FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
TPH1500CNH1,LQ 150V U-MOS VIII-H SOP-ADVANCE(N) Toshiba Semiconductor and Storage	7,540	-	RFQ	Datasheet	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150 V	38A (Tc)	10V	15.4mOhm @ 19A, 10V	4V @ 1mA	-	±20V	2200 pF @ 75 V	-	2.5W (Ta), 170W (Tc)	150°C	-	-	Surface Mount	8-SOP Advance (5x5.75)
TJ40S04M3L(T6L1,NQ MOSFET P-CH 40V 40A DPAK Toshiba Semiconductor and Storage	1,754	-	RFQ	Datasheet	U-MOSVI	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	40 V	40A (Ta)	6V, 10V	9.1mOhm @ 20A, 10V	3V @ 1mA	83 nC @ 10 V	+10V, -20V	4140 pF @ 10 V	-	68W (Tc)	175°C (TJ)	-	-	Surface Mount	DPAK+
TJ30S06M3L(T6L1,NQ MOSFET P-CH 60V 30A DPAK Toshiba Semiconductor and Storage	4,000	-	RFQ	Datasheet	U-MOSVI	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	60 V	30A (Ta)	6V, 10V	21.8mOhm @ 15A, 10V	3V @ 1mA	80 nC @ 10 V	+10V, -20V	3950 pF @ 10 V	-	68W (Tc)	175°C (TJ)	-	-	Surface Mount	DPAK+
TPH3R008QM,LQ 80V UMOS9-H SOP-ADVANCE(N) 3MOHM Toshiba Semiconductor and Storage	10,863	-	RFQ	Datasheet	U-MOSX-H	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	100A (Tc)	6V, 10V	3mOhm @ 50A, 10V	3.5V @ 900µA	71 nC @ 10 V	±20V	7200 pF @ 40 V	-	3W (Ta), 180W (Tc)	175°C	-	-	Surface Mount	8-SOP Advance (5x5.75)
XPH1R104PS,L1XHQ 40V UMOS9-H SOP ADVANCE Toshiba Semiconductor and Storage	5,000	-	RFQ	Datasheet	U-MOSIX-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	120A (Ta)	6V, 10V	1.14mOhm @ 60A, 10V	3V @ 500µA	55 nC @ 10 V	±20V	4560 pF @ 10 V	-	3W (Ta), 132W (Tc)	175°C	Automotive	AEC-Q101	Surface Mount	8-SOP Advance (5x5)
TK10P50W,RQ PB-F POWER MOSFET TRANSISTOR DPA Toshiba Semiconductor and Storage	1,609	-	RFQ	Datasheet	DTMOSIV	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	500 V	9.7A (Ta)	10V	430mOhm @ 4.9A, 10V	3.7V @ 500µA	20 nC @ 10 V	±30V	700 pF @ 300 V	-	80W (Tc)	150°C	-	-	Surface Mount	DPAK
TK60S06K3L(T6L1,NQ MOSFET N-CH 60V 60A DPAK Toshiba Semiconductor and Storage	1,755	-	RFQ	Datasheet	U-MOSIV	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	60A (Ta)	6V, 10V	8mOhm @ 30A, 10V	3V @ 1mA	60 nC @ 10 V	±20V	2900 pF @ 10 V	-	88W (Tc)	175°C (TJ)	-	-	Surface Mount	DPAK+
TK8P65W,RQ PB-F POWER MOSFET TRANSISTOR DPA Toshiba Semiconductor and Storage	1,974	-	RFQ	Datasheet	DTMOSIV	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	7.8A (Ta)	10V	670mOhm @ 3.9A, 10V	3.5V @ 300µA	16 nC @ 10 V	±30V	570 pF @ 300 V	-	80W (Tc)	150°C	-	-	Surface Mount	DPAK
TPH1400CQ5,LQ 150V UMOS 10-H SOP ADVANCE Toshiba Semiconductor and Storage	4,975	-	RFQ	Datasheet	U-MOSX-H	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150 V	77A (Ta), 32A (Tc)	8V, 10V	14.1mOhm @ 16A, 10V	4.5V @ 600µA	31 nC @ 10 V	±20V	3800 pF @ 75 V	-	3W (Ta), 170W (Tc)	175°C	-	-	Surface Mount	8-SOP Advance (5x5.75)
TK12P50W,RQ PB-F POWER MOSFET TRANSISTOR DPA Toshiba Semiconductor and Storage	1,877	-	RFQ	Datasheet	DTMOSIV	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	500 V	11.5A (Ta)	10V	340mOhm @ 5.8A, 10V	3.7V @ 600µA	25 nC @ 10 V	±30V	890 pF @ 300 V	-	100W (Tc)	150°C	-	-	Surface Mount	DPAK

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FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

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Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

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