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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK16V60W5,LVQ Toshiba Semiconductor and Storage

TK16V60W5,LVQ

PB-F POWER MOSFET TRANSISTOR DTM

Toshiba Semiconductor and Storage

2,260 -
Datasheet DTMOSIV 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 245mOhm @ 7.9A, 10V 4.5V @ 790µA 43 nC @ 10 V ±30V 1350 pF @ 300 V - 139W (Tc) 150°C - - Surface Mount 4-DFN-EP (8x8)
TK14V65W,LQ Toshiba Semiconductor and Storage

TK14V65W,LQ

PB-F POWER MOSFET TRANSISTOR DTM

Toshiba Semiconductor and Storage

2,394 -
Datasheet DTMOSIV 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 280mOhm @ 6.9A, 10V 3.5V @ 690µA 35 nC @ 10 V ±30V 1300 pF @ 300 V - 139W (Tc) 150°C - - Surface Mount 4-DFN-EP (8x8)
TK5R0A15Q5,S4X Toshiba Semiconductor and Storage

TK5R0A15Q5,S4X

150V UMOS10-HSD TO-220SIS 5MOHM

Toshiba Semiconductor and Storage

380 -
Datasheet U-MOSX-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 150 V 76A (Ta), 76A (Tc) 8V, 10V 5mOhm @ 38A, 10V 4.5V @ 2.2mA 96 nC @ 10 V ±20V 7820 pF @ 75 V - 53W (Tc) 175°C - - Through Hole TO-220SIS
TK25V60X5,LQ Toshiba Semiconductor and Storage

TK25V60X5,LQ

PB-F POWER MOSFET TRANSISTOR DTM

Toshiba Semiconductor and Storage

2,488 -
Datasheet DTMOSIV 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 150mOhm @ 7.5A, 10V 4.5V @ 1.2mA 60 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C - - Surface Mount 4-DFN-EP (8x8)
TK22V65X5,LQ Toshiba Semiconductor and Storage

TK22V65X5,LQ

PB-F POWER MOSFET TRANSISTOR DFN

Toshiba Semiconductor and Storage

2,500 -
Datasheet DTMOSIV-H 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Ta) 10V 170mOhm @ 11A, 10V 4.5V @ 1.1mA 50 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C - - Surface Mount 4-DFN-EP (8x8)
TK16G60W,RVQ Toshiba Semiconductor and Storage

TK16G60W,RVQ

MOSFET N CH 600V 15.8A D2PAK

Toshiba Semiconductor and Storage

984 -
Datasheet DTMOSIV TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 38 nC @ 10 V ±30V 1350 pF @ 300 V - 130W (Tc) 150°C (TJ) - - Surface Mount D2PAK
TK095N65Z5,S1F(S Toshiba Semiconductor and Storage

TK095N65Z5,S1F(S

650V DTMOS6-HIGH SPEED DIODE

Toshiba Semiconductor and Storage

195 -
Datasheet DTMOSVI TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 29A (Ta) 10V 95mOhm @ 14.5A, 10V 4.5V @ 1.27mA 50 nC @ 10 V ±30V 2880 pF @ 300 V - 230W (Tc) 150°C - - Through Hole TO-247
TK068N65Z5,S1F Toshiba Semiconductor and Storage

TK068N65Z5,S1F

650V DTMOS6-HSD TO-247 68MOHM

Toshiba Semiconductor and Storage

235 -
Datasheet DTMOSVI TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 37A (Ta) 10V 68mOhm @ 18.5A, 10V 4.5V @ 1.69mA 68 nC @ 10 V ±30V 3765 pF @ 300 V - 270W (Tc) 150°C - - Through Hole TO-247
TK31V60W,LVQ Toshiba Semiconductor and Storage

TK31V60W,LVQ

MOSFET N-CH 600V 30.8A 4DFN

Toshiba Semiconductor and Storage

2,455 -
Datasheet DTMOSIV 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 98mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86 nC @ 10 V ±30V 3000 pF @ 300 V - 240W (Tc) 150°C (TJ) - - Surface Mount 4-DFN-EP (8x8)
TW048Z65C,S1F Toshiba Semiconductor and Storage

TW048Z65C,S1F

G3 650V SIC-MOSFET TO-247-4L 48

Toshiba Semiconductor and Storage

243 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 40A (Tc) 18V 69mOhm @ 20A, 18V 5V @ 1.6mA 41 nC @ 18 V +25V, -10V 1362 pF @ 400 V - 132W (Tc) 175°C - - Through Hole TO-247-4L(X)
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.