FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
TW030Z120C,S1F G3 1200V SIC-MOSFET TO-247-4L 3 Toshiba Semiconductor and Storage	105	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	60A (Tc)	18V	41mOhm @ 30A, 18V	5V @ 13mA	82 nC @ 18 V	+25V, -10V	2925 pF @ 800 V	-	249W (Tc)	175°C	-	-	Through Hole	TO-247-4L(X)
TW015Z120C,S1F G3 1200V SIC-MOSFET TO-247-4L 1 Toshiba Semiconductor and Storage	68	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	100A (Tc)	18V	21mOhm @ 50A, 18V	5V @ 11.7mA	158 nC @ 18 V	+25V, -10V	6000 pF @ 800 V	-	431W (Tc)	175°C	-	-	Through Hole	TO-247-4L(X)
2SK1828TE85LF MOSFET N-CH 20V 50MA SC59 Toshiba Semiconductor and Storage	1,367	-	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	50mA (Ta)	2.5V	40Ohm @ 10mA, 2.5V	1.5V @ 100µA	-	10V	5.5 pF @ 3 V	-	200mW (Ta)	150°C (TJ)	-	-	Surface Mount	SC-59
SSM3K56CT,L3F MOSFET N-CH 20V 800MA CST3 Toshiba Semiconductor and Storage	14,906	-	RFQ	Datasheet	U-MOSVII-H	SC-101, SOT-883	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20 V	800mA (Ta)	1.5V, 4.5V	235mOhm @ 800mA, 4.5V	1V @ 1mA	1 nC @ 4.5 V	±8V	55 pF @ 10 V	-	500mW (Ta)	150°C (TA)	-	-	Surface Mount	CST3
TK7R0E08QM,S1X UMOS10 TO-220AB 80V 7MOHM Toshiba Semiconductor and Storage	108	-	RFQ	Datasheet	U-MOSX-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	80 V	64A (Tc)	6V, 10V	7mOhm @ 32A, 10V	3.5V @ 500µA	39 nC @ 10 V	±20V	2700 pF @ 40 V	-	87W (Tc)	175°C	-	-	Through Hole	TO-220
TPCA8026(TE12L,Q,M MOSFET N-CH 30V 45A 8SOP Toshiba Semiconductor and Storage	1,171	-	RFQ	Datasheet	U-MOSIV	8-PowerVDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	45A (Ta)	4.5V, 10V	2.2mOhm @ 23A, 10V	2.5V @ 1mA	113 nC @ 10 V	±20V	4200 pF @ 10 V	-	1.6W (Ta), 45W (Tc)	150°C (TJ)	-	-	Surface Mount	8-SOP Advance (5x5)
SSM6J501NU,LF MOSFET P-CH 20V 10A 6UDFNB Toshiba Semiconductor and Storage	468	-	RFQ	Datasheet	U-MOSVI	6-WDFN Exposed Pad	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	20 V	10A (Ta)	1.5V, 4.5V	15.3mOhm @ 4A, 4.5V	1V @ 1mA	29.9 nC @ 4.5 V	±8V	2600 pF @ 10 V	-	1W (Ta)	150°C (TJ)	-	-	Surface Mount	6-UDFNB (2x2)
SSM3K341TU,LF MOSFET N-CH 60V 6A UFM Toshiba Semiconductor and Storage	244	-	RFQ	Datasheet	U-MOSVIII-H	3-SMD, Flat Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	6A (Ta)	4V, 10V	36mOhm @ 4A, 10V	2.5V @ 100µA	9.3 nC @ 10 V	±20V	550 pF @ 10 V	-	1.8W (Ta)	175°C	-	-	Surface Mount	UFM
SSM3K341R,LF MOSFET N-CH 60V 6A SOT-23F Toshiba Semiconductor and Storage	57	-	RFQ	Datasheet	U-MOSVIII-H	SOT-23-3 Flat Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	6A (Ta)	4V, 10V	36mOhm @ 5A, 10V	2.5V @ 100µA	9.3 nC @ 10 V	±20V	550 pF @ 10 V	-	1.2W (Ta)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	SOT-23F
TPHR9003NL1,LQ UMOS9 SOP-ADV(N) PD=78W F=1MHZ Toshiba Semiconductor and Storage	52	-	RFQ	Datasheet	U-MOSVIII-H	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	150A (Tc)	4.5V, 10V	0.9mOhm @ 50A, 10V	2.3V @ 1mA	74 nC @ 10 V	±20V	6900 pF @ 15 V	-	800mW (Ta), 170W (Tc)	150°C	-	-	Surface Mount	8-SOP Advance (5x5.75)

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FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

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Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

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Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

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